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KAF-3200E / KAF-3200ME

KAF- 3200E KAF- 3200ME 2184 (H) x 1472 (V) Pixel Full-Frame CCD Image Sensor Performance Specification

Eastman Kodak Company Image Sensor Solutions Rochester, New York 14650-2010

Revision No. 2 May 16, 2002

Eastman Kodak Company - Image Sensor Solutions
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KAF-3200E / KAF-3200ME
TABLE OF CONTENTS 1. 1.1 1.2 1.3 1.4 2. 2.1 2.2 2.3 2.4 3. 3.1 3.2 3.3 3.4 3.5 4. 5. 6. 7. 8. Description .......................................................................................................................................3 Features ............................................................................................................................................3 Architecture .....................................................................................................................................3 Functional Description .....................................................................................................................4 Pin Description ................................................................................................................................5 Imaging Performance Specifications ...............................................................................................6 Electro-Optical Characteristics ........................................................................................................6 Quantum Efficiency (No microlens, no cover glass) .......................................................................7 Quantum Efficiency (With microlens, no cover glass) ....................................................................7 Cosmetic Specification ....................................................................................................................9 Operation .......................................................................................................................................10 Absolute Maximum Ratings ..........................................................................................................10 DC Operating Conditions ..............................................................................................................11 AC Operating Conditions ..............................................................................................................12 AC Timing Conditions ...................................................................................................................12 Clock Timing .................................................................................................................................13 Storage and Handling.....................................................................................................................14 Quality Assurance and Reliability .................................................................................................15 Packager Drawing ..........................................................................................................................16 AR Cover Glass Transmission .......................................................................................................17 Ordering Information .....................................................................................................................18 FIGURES Figure Figure Figure Figure Figure Figure Figure 1 2 3 4 5 6 7 Block Diagram ........................................................................................................................3 Pin Assignments......................................................................................................................5 Spectral response. ...................................................................................................................8 Typical Output Load Diagram for Operation of up to 10 MHz............................................11 Timing Diagrams ..................................................................................................................13 Package Drawing ..................................................................................................................16 CoverGlass Transmission. ....................................................................................................17

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KAF-3200E / KAF-3200ME
1. Description 1.1 Features
3.2 Million Pixel Area CCD 2184 H x 1472V Pixels Transparent Gate True Two Phase Technology Microlens option Enhanced Spectral Response 6.8 x 6.8µm Pixels 14.85mm H x 10.26mm V Photosensitive Area 100% Fill Factor High Output Sensitivity (20µV/e-) 78 dB Dynamic Range Low Dark Current ( <7pA/cm2 @ 25oC) The sensor is built with a true two-phase CCD technology employing a transparent gate and with micro lenses available. This technology simplifies the support circuits that drive the sensor and reduces the dark current without compromising charge capacity. The transparent gate results in spectral response increased ten times at 400 nm, compared to a front side illuminated standard poly silicon gate technology. The micro lenses are an integral part of each pixel and cause most of the light to pass through the transparent gate half of the pixel, further improving the spectral sensitivity. The photoactive area is 14.85 mm x 10.26mm and is housed in a 24 pin, dual in line (DIP) package with 0.1" pin spacing. The sensor consists of 2254 parallel (vertical) CCD shift registers each 1510 elements long. These registers act as both the photosensitive elements and as the transport circuits that allow the image to be sequentially read out of the sensor. The parallel (vertical) CCD registers transfer the image one line at a time into a single 2267 element (horizontal) CCD shift register. The horizontal register transfers the charge to a single output amplifier. The output amplifier is a two-stage source follower that converts the photo-generated charge to a voltage for each pixel.
4 Dark line

1.2 Architecture
The KAF-3200E is a high performance monochrome area CCD (charge-coupled device) image sensor with 2184H x 1472V photoactive pixels designed for a wide range of image sensing applications in the 0.3 nm to 1.0 nm wavelength band. Typical applications include military, scientific, and industrial imaging. A 75dB dynamic range is possible operating at room temperature.

V1
= scavanging CCDs to reduce edge artifacts

V2

KAF - 3200E
Usable Active Area: 2184(H) x 1472(V) 6.8m x 6.8 µmpixels

Vrd

R Vdd Vout Vss Vlg Sub
Vog

34 Dark line 2184 Active Pixels/Line 34 Dark 3 Invalid 1 active(CTE monitor) 8 Invalid 34 Dark 1 active(CTE monitor) 2 Invalid

H1 H2

Figure 1 - Block Diagram
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KAF-3200E / KAF-3200ME
1.3 Functional Description 1.3.1 Image Acquisition
An electronic representation of an image is formed when incident photons falling on the sensor plane create electron-hole pairs within the sensor. These photoninduced electrons are collected locally by the formation of potential wells at each pixel site. The number of electrons collected is linearly dependent on light level and exposure time and non-linearly dependent on wavelength. When the pixel's capacity is reached, excess electrons will leak into the adjacent pixels within the same column. This is termed blooming. During the integration period, the V1 and V2 register clocks are held at a constant (low) level. See Figure 5. - Timing Diagrams.

1.3.4 Dark Reference Pixels
At the beginning of each line are 34 light shielded pixels. There is also 34 full dark line at the start of every frame and 4 full dark line at the end of each frame. Under normal circumstances, these pixels do not respond to light. However, dark reference pixels in close proximity to an active pixel, (including the 2 full dark lines and one column at end of each line), can scavenge signal depending on light intensity and wavelength and therefore will not represent the true dark signal.

1.3.5 Transfer Efficiency Test Pixels and Dummy Pixels
At the beginning of each line and at the end of each line are extra horizontal CCD pixels. These are a combination of pixels that are not associated with any vertical CCD register and two that are associated with extra photoactive vertical CCDs. These are provided to give an accurate photosensitive signal that can be used to monitor the charge transfer efficiency in the serial (horizontal) register. They are arranged as follows beginning with the first pixel in each line 8 dark, inactive pixels 1 photoactive 3 inactive pixels 34 dark reference pixels 2184 photoactive pixels 34 dark pixels 1 photo active pixel 2 inactive pixels

1.3.2 Charge Transport
Referring again to Figure 5 - Timing Diagrams, the integrated charge from each photo-gate is transported to the output using a two-step process. Each line (row) of charge is first transported from the vertical CCDs to the horizontal CCD register using the V1 and V2 register clocks. The horizontal CCD is presented a new line on the falling edge of V1 while H2 is held high. The horizontal CCD's then transport each line, pixel by pixel, to the output structure by alternately clocking the H1 and H2 pins in a complementary fashion. On each falling edge of H1 a new charge packet is transferred onto a floating diffusion and sensed by the output amplifier

1.3.1 Output Structure
Charge presented to the floating diffusion (FD) is converted into a voltage and current amplified in order to drive off-chip loads. The resulting voltage change seen at the output is linearly related to the amount of charge placed on FD. Once the signal has been sampled by the system electronics, the reset gate (R) is clocked to remove the signal and FD is reset to the potential applied by VRD. More signal at the floating diffusion reduces the voltage seen at the output pin. In order to activate the output structure, an off-chip load must be added to the Vout pin of the device - see Figure 4

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KAF-3200E / KAF-3200ME
1.4 Pin Description
Pin 1 2 3 4 5 6 7 8 9, 10, 11 Symbol VOG VOUT VDD VRD R VSS H1 H2 N/C Description Output Gate Video Output Amplifier Supply Reset Drain Reset Clock Amplifier Supply Return Horizontal CCD Clock - Phase 1 Horizontal CCD Clock - Phase 2 No connection (open pin) Pin 12, 13, 14 15, 16, 21, 22 17, 18, 19, 20 23 24 Symbol VSUB V1 V2 VGuard N/C Description Substrate (Ground) Vertical CCD Clock - Phase 1 Vertical CCD Clock - Phase 2 Guard Ring No Connection (open pin)

VOG

1

Pin 1

24
Pixel 1,1

N/C

VOUT 2 VDD VRD 3 4 5 6 7 8 9 10 11

23 VGUARD 22 V1 21 V1 20 V2 19 V2 18 V2 17 V2 16 V1 15 V1 14 VSUB 13 VSUB

R
VSS

H1 H2
N/C N/C N/C

VSUB 12

Figure 2 - Pin Assignments
Note: The KAF-3200E is designed to be compatible with the KAF-1602 and KAF-0401 series of Image sensors. The exception is the addition of two new Vsub connections on pins 12 and 13.

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KAF-3200E / KAF-3200ME
2. Imaging Performance Specifications 2.1 Electro-Optical Characteristics All values measured at 25°C, and nominal operating
Description Saturation Signal Vertical CCD capacity Horizontal CCD capacity Output Node capacity Photoresponse Non-Linearity Photoresponse Non-Uniformity Dark Signal Dark Signal Doubling Temperature Dark Signal Non-Uniformity Dynamic Range Charge Transfer Efficiency Output Amplifier DC Offset Output Amplifier Bandwidth Output Amplifier Sensitivity Output Amplifier output Impedance Noise Floor Notes:
1.

conditions. These parameters exclude defective pixels. Min. Nom. Max. Units Notes

Symbol

Nsat

50000 100000 100000

55000 110000 110000 1 1 15 6

electrons / pixel 120000 2 3 30 10 7 30 % % electrons / pixel / sec pA/cm2
o

1 2 3 4 25°C 5 6 7 8

PRNL PRNU Jdark 5 DSNU DR CTE Vodc f-3dB Vout/Ne~ Zout ne~ 72 0.99997 VRD - 2 18 175

6 15 77 0.99999 VRD - 1 45 20 200 7

C

electrons / pixel / sec dB V Mhz uV/e~ Ohms electrons

VRD

250 12

9

2. 3. 4. 5. 6. 7. 8. 9.

For pixel binning applications, electron capacity up to 150,000 can be achieved with modified CCD inputs. Each sensor may have to be optimized individually for these applications. Some performance parameters may be compromised to achieve the largest signals. Worst-case deviation from straight line fit, between 2% and 90% of Nsat. One Sigma deviation of a 128x128 sample when CCD illuminated uniformly. Average of all pixels with no illumination at 25°C.. Average dark signal of any of 11 x 8 blocks within the sensor. (Each block is 128 x 128 pixels) 20log ( Nsat / ne~) at nominal operating frequency and 25oC. Video level offset with respect to ground Last output amplifier stage only. Assumes 10pF off-chip load.. Output noise at -10oC, 1MHz operating frequency (15MHz bandwidth), and tint = 0 (excluding dark signal).

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KAF-3200E / KAF-3200ME
2.2 Quantum Efficiency (No micro lens; no cover glass)
(See Figure 3 - Spectral Response)
Wavelength Min. Nom. Max. Units % % % % Notes 1, 1, 1, 1, 2 2 2 2

Rr Rg Rb Rb

(650 (550 (450 (400

nm) nm) nm) nm)

65 52 40 32

Notes: 1. The spectral response is characterized on a small number of parts. The expected minmum value at each wavelength is nom ­ (0.15 * nom)

2. The spectral response is characterized on a small number of parts.
The expected maximum value at each wavelength is nom + (0.15 * nom)

The no micro lens configuration is available with either no cover glass or with a multi side anti-reflection coated cover glass. See Figure 7 - MAR Cover Glass Transmission. The values above and in Figure 3 - Spectral Response are for the no cover glass configuration.

2.3Quantum Efficiency (With micro lens; no cover glass)
(See Figure 3 - Spectral Response) Wavelength Rr Rg Rb Rb (650 (550 (450 (400 nm) nm) nm) nm) Min. Nom. 82 75 60 58 Max.
Units % % % % Notes 1, 1, 1, 1, 2 2 2 2

Notes: 1. The spectral response is characterized on a small number of parts. The expected minmum value at each wavelength is nom ­ (0.15 * nom)

2. The spectral response is characterized on a small number of parts.
The expected maximum value at each wavelength is nom + (0.15 * nom) The micro lens configuration is available with either no cover glass or with a multi side anti-reflection coated cover glass. See Figure 7 - MAR Cover Glass Transmission. The values above and in Figure 3 - Spectral Response are for the no cover glass configuration.

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KAF-3200E / KAF-3200ME

KAF-3200ME Spectral Response
1.0

0.8

0.6 QE

KAF-3200ME, no coverglass Series3 KAF-3200E, no coverglass

0.4

0.2

0.0 200

300

400

500

600

700

800

900

1000 1100

Wavelength (nm)

Figure 3 - Spectral Response

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KAF-3200E / KAF-3200ME
2.4 Cosmetic Specification
Defect tests performed at T=25oC Grade Point Defects Cluster Defects Column Defects

Total C1 C2 <5 <10

Zone A <2 <5

Total 0 <4

Zone A 0 <2

Total 0 0

Zone A 0 0

1,1472 320,1256 1864,1256

2184,1472

Zone A

320,216 1,1

1864,216 2184,1

Zone A = Central 1544H x 1040V Region
Point Defect Cluster Defect Column Defect DARK: A pixel which deviates by more than 6% from neighboring pixels when illuminated to 70% of saturation, OR BRIGHT: A Pixel with dark current >5000e/pixel/sec at 25°C. A grouping of not more than 5 adjacent point defects 1) A grouping of >5 contiguous point defects along a single column, 2) A column containing a pixel with dark current > 12,000e/pixel/sec (bright column) 3) A column that does not meet the minimum vertical CCD charge capacity (low charge capacity column) 4) A column which loses more than 250 e under 2Ke illumination.(trap defect)) The surrounding 128 x 128 pixels or ±64 columns/rows. Column and cluster defects are separated by no less than two (2) pixels in any direction (excluding single pixel defects).

Neighboring pixels Defect Separation

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KAF-3200E / KAF-3200ME
3. Operation 3.1 Absolute Maximum Ratings
Description Diode Pin Voltages Gate Pin Voltages - Type 1 Gate Pin Voltages - Type 2 Inter-Gate Voltages Output Bias Current Output Load Capacitance Storage Temperature Humidity Symbol Vdiode Vgate1 Vgate2 Vg-g Iout Cload T RH Min. 0 -16 0 Max. 20 16 16 16 -10 15 100 90 Units V V V V mA pF o C % Notes 1, 2 1, 3 1, 4 5 6 6 7

5

Notes: 1. Referenced to pin Vsub. 2. Includes pins: VRD, Vdd, Vss, Vout. 3. Includes pins: V1, V2, H1, H2. 4. Includes pins: Vog, R 5. Voltage difference between overlapping gates. Includes: V1 to V2, H1 to H2, V2 to H1, H2 to Vog. 6. Avoid shorting output pins to ground or any low impedance source during operation. 7. T=25°C. Excessive humidity will degrade MTTF.

CAUTION:

This device contains limited protection against Electrostatic Discharge (ESD) and is rated as a Class 0 device, JESD22 Human Body, and Class A, JESD22 Machine Model. Devices should be handled in accordance with strict handling precautions. (See ISS Application Note MTD/PS-0224.)

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KAF-3200E / KAF-3200ME
3.2 DC Operating Conditions
Description Symbol Min. Nom. Max. Units Max DC Current (mA) 0.01 -0.5 Iout 0.01 0.01 Notes

Reset Drain Output Amplifier Return Output Amplifier Supply Substrate Output Gate Guard Video Output Current

VRD VSS VDD VSUB VOG VGUARD Iout

11 2.5 14.5 0 4.75 9

12 3.0 15 0 5 10 -5

12.25 3.2 15.25 0 5.5 12 -10

V V V V V V mA

1

Notes: 1. An output load sink must be applied to Vout to activate output amplifier - see Figure below.

+15V 0.1uF
~5ma

Vout 140

2N3904 or equivalent Buffered Output 1k

Figure 4 - Typical Output Load Diagram for Operation of up to 10 MHz.
The value of R1 depends on the desired output current according the following formula: R1 = 0.7 / Iout The optimal output current depends on the capacitance that needs to be driven by the amplifier and the bandwidth required. 5mA is recommended for capacitance of 12pF and pixel rates up to 15 MHz.

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KAF-3200E / KAF-3200ME
3.3 AC Operating Conditions
Description Symbol Level Min. Nom. Max. Units Effective Capacitance 5 nF (all V1 pins) 5 nF (all V2 pins) 150 pF

Vertical CCD Clock - Phase 1 Vertical CCD Clock - Phase 2 Horizontal CCD Clock - Phase 1

V1 V2 H1

Low High Low High Low High Low High Low High

-10.0 0.0 -10.0 0.0 -3.5
H1 Low + 10

-8.5 2.0 -8.5 2.0 -3.0 7.0 -3.0 7.0 4.0 11.0

-8.5 3.0 -8.5 3.0 -2
H1 Low + 10

V V V V V V V V V V

Horizontal CCD Clock - Phase 2

H2

-3.5
H1 Low + 10

-2
H1 Low + 10

150 pF

Reset Clock
Notes: 1. All pins draw less than 10uA DC current.

R

3.0 10.0

4.25 11.25

5pF

3.4. AC Timing Conditions
Description H1, H2 Clock Frequency Pixel Period H1, H2 Setup Time V1, V2 Clock Pulse Width Reset Clock Pulse Width Readout Time Integration Time Line Time
Notes: 1. 50% 2. CTE 3. Rise 60%

Symbol f
H

Min.

Nom. 10 100 1 5 20 366.3 242.6

Max. 12

Units MHz ns us us ns ms us

Notes 1, 2, 3

te tHS tV tR treadout tint tline

67 0.5 4 5 252.5 167.2

2 4 5 6 7

duty cycle values. may degrade above the nominal frequency. and fall times (10/90% levels) should be limited to 5-10% of clock period. Cross-over of register clocks should be between 40of amplitude.

4. 5.
6.

R should be clocked continuously. treadout = ( 1510 * tline )
Integration time is user specified. Longer integration times will degrade noise performance due to dark signal fixed pattern and shot noise.

7.

tline = ( 3* tV ) + tHS + ( 2267 * te ) + te

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KAF-3200E / KAF-3200ME
3.5 Clock Timing
Frame Timing
tint tReadout 1 Frame = 1510 Lines V1 V2 H1 H2 Line 1 2 1509 1510

Line Timing Detail
tV V1 1 line V2 H1 tHS te tV

Pixel Timing Detail
tR R

H1 te H2 Vpix 1 count

H2
2267 counts

Vout

Vsat

Vdark

R

Vodc Vsub

Line Content
1-12 13-46 47 - 2230 2231-2264 2265-2267

Vsat Vdark Vpix Vodc Vsub

Saturated pixel video output signal Video output signal in no light situation, not zero due to Jdark Pixel video output signal level, more electrons =more negative* Video level offset with respect to vsub Analog Ground

Photoactive Pixels Dark Reference Pixels

Dummy Pixels

* See Image Aquisition section (page 4)

Figure 5 - Timing Diagrams
Note: The KAF-3200E was designed to be compatible with the KAF-1602 and KAF-0401 series of image sensors. Please note that the polarities of the two-phase clocks have been swapped on the KAF-3200E compared to the KAF-1602 and KAF-0401.

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KAF-3200E / KAF-3200ME
4. Storage and Handling 4.1 Storage Conditions
Image sensors should be stored at room temperature (nominally 25ºC.) in dry nitrogen. This is particularly important for image sensors with temporary cover glass.

4.2 Electrostatic Discharge CAUTION:
To allow for maximum performance, this device was designed with limited input protection; thus, it is sensitive to electrostatic induced damage. These devices should be installed in accordance with strict ESD handling procedures for Class 0 devices, JESD22 Human Body Model and Class A, Machine Model. Devices should be stored in the conductive plastic, first-level packing.

For more information see Application Note MTD/PS-0224, Electrostatic Discharge Control.

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KAF-3200E / KAF-3200ME
5. Quality Assurance and Reliability 5.1 Quality Strategy:
All image sensors will conform to the specifications stated in this document. This will be accomplished through a combination of statistical process control and inspection at key points of the production process. Typical specification limits are not guaranteed but provided as a design target. For further information refer to ISS Application Note MTD/PS-0292, Quality and Reliability.

5.2 Replacement:
All devices are warranted against failure in accordance with the terms of Terms of Sale. This does not include failure due to mechanical and electrical causes defined as the liability of the customer below.

5.3 Liability of the Supplier:
A reject is defined as an image sensor that does not meet all of the specifications in this document upon receipt by the customer.

5.4 Liability of the Customer:
Damage from mechanical (scratches or breakage), electrical (ESD), or other electrical misuse of the device beyond the stated absolute maximum ratings, which occurred after receipt of the sensor by the customer, shall be the responsibility of the customer.

5.5 Cleanliness:
Devices are shipped free of mobile contamination inside the package cavity. Immovable particles and scratches that are within the imager pixel area and the corresponding cover glass region directly above the pixel sites are also not allowed. The cover glass is highly susceptible to particles and other contamination. Touching the cover glass must be avoided. See ISS Application Note MTD/PS-0237, Cover Glass Cleaning for Image Sensors, for further information.

5.6 ESD Precautions:
Devices are shipped in static-safe containers and should only be handled at static-safe workstations. See ISS Application Note MTD/PS-0224. Electrostatic Discharge Control, for handling recommendations.

5.7 Reliability:
Information concerning the quality assurance and reliability testing procedures and results are available from the Image Sensor Solutions and can be supplied upon request. For further information refer to ISS Application Note MTD/PS0292, Quality and Reliability.

5.8 Test Data Retention:
Image sensors shall have an identifying number traceable to a test data file. Test data shall be kept for a period of 2 years after date of delivery.

5.9 Mechanical:
The device assembly drawing is provided as a reference. The device will conform to the published package tolerances.

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KAF-3200E / KAF-3200ME
6. Package Drawing

KAF-3200ME

Figure 6 - Package drawing

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KAF-3200E / KAF-3200ME
7. AR Cover Glass Transmission

Figure 7 - MAR Cover Glass Transmission

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KAF-3200E / KAF-3200ME
8. Ordering Information
Address all inquiries and purchase orders to: Image Sensor Solutions Eastman Kodak Company Rochester, New York 14650-2010 Phone: (585) 722-4385 Fax: (585) 477-4947 E-mail: imagers@kodak.com Web: www.kodak.com/go/imagers Kodak reserves the right to change any information contained herein without notice. All information furnished by Kodak is believed to be accurate. WARNING: LIFE SUPPORT APPLICATIONS POLICY

Kodak image sensors are not authorized for and should not be used within Life Support Systems without the specific written consent of the Eastman Kodak Company. Product warranty is limited to replacement of defective components and does not cover injury or property or other consequential damages.

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