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N.N. Kolesnikov, A.A. Kolchin, D.L. Alov, Yu.N. Ivanov, A.A. Chernov, M. Schiber, H. Hermon, R.B. James, M.S. Goorsky, H. Yoon, J. Toney, B. Brunett, T.E. Schlesinger.
Growth and characterization of p-type Cd_1-x Zn_xTe(x = 0.2, 0.3, 0.4).

Abstract:
Single crystals of p-type semi-insulating Cd_1-x Zn_xTe (CZT) with x = 0.2, 0.3 and 0.4 were grown using the high-pressure vertical Bridgman method. The crystals showed a high degree of axial homogeneity over most of the length of the ingot. The crystals were characterized by measuring the specific resistivity, X-ray spectral analysis, triaxial rocking curves, photoluminescence, etch-pit density and photocurrent kinetics. Despite the high homogeneity the photocurrent kinetics are worse than n-type CZT (x = 0.1, and 0.2) also grown by high-pressure vertical Bridgman.