Electron bombarded sensors-references

Electron-Bombarded, Back-Illuminated CCD Sensors
For Low-Light-Level Imaging Applications

REFERENCES

[1] Reinheimer, Alice L. and Blouke, Morley M., "A simple model of electron-bombarded CCD gain" in Charge-Coupled Devices and Solid State Optical Sensors IV, Morley M. Blouke, Editor, SPIE 2172

[2] W. van Roosbroeck, "Theory and yield and Fano factor of electron-hole pairs generated in semiconductors by high energy particles," Physical Review, Vol. 139 No. 5A, pp.A1702-16, Aug. 30, 1965

[3] Williams, George M. , "A high-performance LLLTV CCD camera for nighttime pilotage: in Electron Tubes and Image Intensifiers, C.B. Johnson and Bruce N. Laprade, Editors, SPIE 1655

[4] Csorba, Illes P., Image Tubes ,Howard W. Sams & Co., Inc. Indianapolis, Indiana, USA 1985

[5] Eberhardt, E.H. , in ITT Technical Note # 126.

25 millimeter SI502AB, 512 x 512, GaAs EBCCD manufactured in a cooperative research and development effort by Scientific Imaging Technologies, Inc. and Intevac EO Sensors.

Appendix A.

EBCCD, ICCD, CCD Model Parameters

Rs(CCD) = 5850 microamps/lumen (2854 deg tungsten lamp)

Rs(GaAs EBCCD, ICCD) = 1600 microamp/lumen (2854 deg tungsten lamp)

NFC(CCD) = 1.00

NFC(ICCD) = 4.00

NFC(EBCCD) 1.09

Gmcp = 500 (-)

(Va-Vo) = 2,500 (V)

Ep = 0.08 (-)

a = 0.35 (-)

Tfo == 0.75 (-)

Npdck(EBCCD) = Gain(EBS)*10 electrons/pix/sec (23 deg C)

Npcdk(ICCD) = Gain*10 electrons/pix/sec(23 -deg C)

Npckk(CCD) = 180 picoamps/cm^2* 5.76*10-10 m^2**

0 electrons (23 deg C)

Nccdk = 180 picoamps/cm (non-MPP), 15 picoamps/cm^2 (MPP)

Na= 40 electrons rms (13 MHz, 23 deg C)

A = 5.76E-10 meters^2 (24 micron square pixels - SI502AB)

Tf = .0167 seconds - field integration time

Nf = 3.5 frames

pixs= 4/(5*f^2)/A (pixels/line-pair) - 1951 Air Force three bar targets.