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TC211 192- в 165-PIXEL CCD IMAGE SENSOR
SOCS008B JANUARY 1990

· · · · · · · · · ·

Full-Frame Operation Antiblooming Capability Single-Phase Clocking for Horizontal and Vertical Transfers Fast Clear Capability Dynamic Range . . . 60 dB Typical High Blue Response High Photoresponse Uniformity Solid-State Reliability With No Image Burn-In, Residual Imaging, Image Distortion, Image Lag, or Microphonics 6-Pin Dual-In-Line Ceramic Package Square Image Area: 2640 µm by 2640 µm 192 Pixels (H) by 165 Pixels (V) Each Pixel 13.75 µm (H) by 16 µm (V)

DUAL-IN-LINE PACKAGE (TOP VIEW) ABG 1 6 IAG

VSS ADB

2

5

SRG

3

4

OUT

description
The TC211 is a full-frame charge-coupled device (CCD) image sensor designed specifically for industrial applications requiring ruggedness and small size. The image-sensing area is configured into 165 horizontal lines each containing 192 pixels. Twelve additional pixels are provided at the end of each line to establish a dark reference and line clamp. The antiblooming feature is activated by supplying clock pulses to the antiblooming gate, an integral part of each image-sensing element. The charge is converted to signal voltage at 4 µV per electron by a high-performance structure with built-in automatic reset and a voltage-reference generator. The signal is further buffered by a low-noise two-stage source-follower amplifier to provide high output-drive capability. The TC211 is supplied in a 6-pin dual-in-line ceramic package approximately 7,5 mm (0.3 in.) square. The glass window can be cleaned using any standard method for cleaning optical assemblies or by wiping the surface with a cotton swab soaked in alcohol. The TC211 is characterized for operation from 10°C to 45°C.

This MOS device contains limited built-in gate protection. During storage or handling, the device leads should be shorted together or the device should be placed in conductive foam. In a circuit, unused inputs should always be connected to VSS. Under no circumstances should pin voltages exceed absolute maximum ratings. Avoid shorting OUT to VSS during operation to prevent damage to the amplifier. The device can also be damaged if the output terminals are reverse-biased and an excessive current is allowed to flow. Spec ific guidelines for handling dev i c e s of this ty pe are contained in the public ation Guidelines for Handling Electrostatic-Discharge-Sensitive (ESDS) Devices and Assemblies available from Texas Instruments.
PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.

Copyright © 1990, Texas Instruments Incorporated

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TC211 192- в 165-PIXEL CCD IMAGE SENSOR
SOCS008B JANUARY 1990

functional block diagram
165

ABG

1

6

IAG

ADB

3

1 1 OUT 4 Serial Register Clear Gate 12 Dark Pixels 192 Image Pixels 6 Dummy Pixels 192 5 SRG

VSS

2

Terminal Functions
TERMINAL NAME ABG VSS ADB OUT SRG IAG NO. 1 2 3 4 5 6 I O I I I/O I DESCRIPTION Antiblooming gate Amplifier ground Supply voltage for amplifier drain bias Output signal Serial-register gate Image-area gate storage

functional description
The image-sensing area consists of 165 horizontal image lines each containing 192 photosensitive elements (pixels). Each pixel is 13.75 µm (horizontal) by 16.00 µm (vertical). As light enters the silicon in the image-sensing area, free electrons are generated and collected in potential wells (see Figure 1). During this time, the antiblooming gate is activated by applying a burst of pulses every horizontal blanking interval. This prevents blooming caused by the spilling of charge from overexposed elements into neighboring elements. The antiblooming gate is typically held at a midlevel voltage during readout. The quantity of charge collected in each pixel is a linear function of the incident light and the exposure time. After exposure and under dark conditions, the charge packets are transferred from the image area to the serial register at the rate of one image line per each clock pulse applied to the image-area gate. Once an image line has been transferred into the serial register, the serial-register gate can be clocked until all of the charge packets are moved out of the serial register to the charge detection node at the amplifier input. There are 12 dark pixels to the right of the 192 image pixels on each image line. These dark pixels are shielded from incident light and the signal derived from them can be used to generate a dark reference for restoration of the video black level on the next image line.

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TC211 192- в 165-PIXEL CCD IMAGE SENSOR
SOCS008B JANUARY 1990

functional description (continued)
Each clock pulse applied to the image area gate causes an automatic fast clear of the 192 image pixels and 12 dark pixels of the serial register before the next image line is transferred into the serial register. (Note that the six dummy pixels at the front of the serial register, which are used to transport charge packets from the serial register to the amplifier input, are not cleared by the image area gate clock.) The automatic fast-clear feature can be used to initialize the image area by transferring all 165 image lines to the serial register gate under dark conditions without clocking the serial register gate.
Barriers Antiblooming Gate Vertical 16 µm Potential Wells

Horizontal 13.75 µm Representative Top View of Pixels

Channel Stop

Virtual Phase

Clocked Phase (imagearea gate)

Virtual Phase

Clocked Phase (imagearea gate)

Virtual Phase

Clocked Phase (imagearea gate) Etched Polysilicon Insulating Oxide

Cross Section of Pixels

Silicon

1 Pixel

IAG Low

ABG Low ABG Intermediate

Cross Section of Potentials in Silicon

IAG High

ABG High

Direction of Vertical Charge Transfer

Figure 1. Charge Accumulation and Transfer Process

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TC211 192- в 165-PIXEL CCD IMAGE SENSOR
SOCS008B JANUARY 1990

Readout ABG 165 Cycles IAG 210 Cycles

Integration

SRG

IAG t2 SRG t1

tw1

t3

tw2 t4

Figure 2. Timing Diagram, Noninterlace Mode

absolute maximum ratings over operating free-air temperature range (unless otherwise noted)
Supply voltage range for ADB (see Note 1) Input voltage range for IAG, SRG, ABG, VI Operating free-air temperature range . . . . Storage temperature range, TA . . . . . . . . . Lead temperature 1,6 mm (1/16 inch) from .... .... ..... ..... case ... ... ... ... for .. .. .. .. 10 ........ ........ ........ ........ seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0 V to 15 V . . 15 V to 5 V 30°C to 85°C 30°C to 85°C . . . . . . . 260°C

Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. NOTE 1: All voltage values are with respect to VSS.

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TC211 192- в 165-PIXEL CCD IMAGE SENSOR
SOCS008B JANUARY 1990

recommended operating conditions
MIN Supply voltage, ADB Substrate bias voltage High level IAG Intermediate level Low level Input voltage VI voltage, SRG High level Low level High level ABG IAG Clock frequency, fclock t1 t2 tW1 tW2 t3 t4 Capacitive load SRG ABG Time interval, SRG to IAG Time interval, IAG to SRG transfer pulse Pulse duration, IAG high Pulse duration, SRG transfer pulse high Time interval, IAG to SRG transfer pulse Time interval, SRG transfer pulse to SRG clock pulse OUT 70 0 350 350 350 70 12 Intermediate level Low level 1.5 10 11 1.5 11 4 3 7.5 11 NOM 12 0 2 5 10 2 10 4.5 2.5 7 2.5 2 9 2.5 9 5 2 6.5 1.5 10 2 ns ns ns ns ns ns pF MHz V MAX 13 UNIT V V

Operating free-air temperature, TA 10 45 °C The algebraic convention, in which the least-positive (most negative) value is designated minimum, is used in this data sheet for clock voltage levels. Adjustment is required for optimal performance.

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TC211 192- в 165-PIXEL CCD IMAGE SENSOR
SOCS008B JANUARY 1990

electrical characteristics over recommended operating range of supply voltage, TA = 10°C to 45°C
PARAMETER Dynamic range (see Note 2) Dynamic (see Note Charge conversion factor Charge transfer efficiency (see Note 4) Signal response delay time, (see Note 5 and Figure 5) Gamma (see Note 6) Output resistance Noise voltage Noise voltage Noise equivalent signal Rejection ratio at 16 MHz Rejection ratio at 7.16 MHz Supply current IAG Input capacitance, Ci SRG ABG From ADB to OUT (see Note 7) From SRG to OUT (see Note 8) 1/f noise (5 kHz) Random noise, f = 100 kHz 0.97 0.99990 Antiblooming disabled (see Note 3) Antiblooming enabled MIN 60 57 4 0.99998 25 0.98 700 370 70 150 19 37 5 1600 25 780 pF 10 0.99 800 nV/Hz nV/ electrons dB mA ns TYP MAX UNIT dB µV/e

All typical values are at TA = 25°C NOTES: 2. Dynamic range is 20 times the logarithm of the mean noise signal divided by the saturation output signal. 3. For this test, the antiblooming gate must be biased at the intermediate level. 4. Charge transfer efficiency is one minus the charge loss per transfer in the output register. The test is performed in the dark using an electrical input signal. 5. Signal response delay time is the time between the falling edge of the SRG clock pulse and the output signal valid state. 6. Gamma () is the value of the exponent in the equation below for two points on the linear portion of the transfer function curve (this value represents points near saturation): Exposure (2) Exposure (1)
g

+

Output signal (2) Output signal (1)

7. ADB rejection ratio is 20 times the logarithm of the ac amplitude at the OUT divided by the ac amplitude at ADB. 8. SRG rejection ratio is 20 times the logarithm of the ac amplitude at the OUT divided by the ac amplitude at SRG.

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TC211 192- в 165-PIXEL CCD IMAGE SENSOR
SOCS008B JANUARY 1990

optical characteristics, TA = 25°C (unless otherwise noted)
PARAMETER Sensitivity (see Note 9) Sensitivity (see Note Saturation signal (see Note 1) Saturation signal (see Note 11) Blooming overload ratio (see Note Blooming overload ratio (see Note 12) Output signal nonuniformity (1/2 saturation) (see Note 13) Image-area well capacity Dark current Dark signal (see Note 14) Dark signal nonuniformity for entire field (see Note 15) Modulation transfer function Modulation transfer function NOTES: 9. 10. 11. 12. 13. Horizontal Vertical TA = 21°C No IR filter With IR filter Measured at VU (see Note 10) (see Note Measured at Antiblooming disabled Antiblooming enabled Strobe Shuttered light 400 350 MIN TYP 260 33 600 450 5 100 10% 20% 150 в 103 10 4 50% 70% 15 15 electrons nA/cm2 mV mV MAX UNIT mV/lx mV/lx mV mV

0.027

Sensitivity is measured at an integration time of 16.667 ms and a source temperature of 2856 K. A CM-500 filter is used. VU is the output voltage that represents the threshold of operation of antiblooming. VU 1/2 saturation signal. Saturation is the condition in which further increase in exposure does not lead to further increase in output signal. Blooming overload ratio is the ratio of blooming exposure to saturation exposure. Output signal nonuniformity is the ratio of the maximum pixel-to-pixel difference in output signal to the mean output signal for exposure adjusted to give 1/2 the saturation output signal. 14. Dark-signal level is measured from the dummy pixels. 15. Dark-signal nonuniformity is the maximum pixel-to-pixel difference in a dark condition.

PARAMETER MEASUREMENT INFORMATION
VIH min 100% 90%

Intermediate Level 10% VIL max 0% tr tr = 220 ns, tf = 330 ns for IAG tr = 115 ns, tf = 135 ns for ABG tf

Figure 3. Typical Clock Waveform for IAG and ABG

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TC211 192- в 165-PIXEL CCD IMAGE SENSOR
SOCS008B JANUARY 1990

PARAMETER MEASUREMENT INFORMATION
VIH min 100% 90%

10% VIL max 0% tr tr = 25 ns, tf = 30 ns tf

Figure 4. Typical Clock Waveform for SRG
1.5 V to 2.5 V SRG 8.5 V 8.5 V to 10 V

0% OUT

90% 100%

CCD Delay Sample and Hold

t

10 ns

15 ns

Figure 5. SRG and OUT Waveforms

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TC211 192- в 165-PIXEL CCD IMAGE SENSOR
SOCS008B JANUARY 1990

TYPICAL CHARACTERISTICS
VERTICAL MODULATION TRANSFER FUNCTION (BARS PARALLEL TO SERIAL REGISTER)
1

HORIZONTAL MODULATION TRANSFER FUNCTION (BARS PERPENDICULAR TO SERIAL REGISTER)
1

MTF Modulation Transfer Function

0.8

MTF Modulation Transfer Function

0.8

0.6

0.6

0.4

0.4

0.2

= 400 to 700-nm Monochromatic Light VADB = 12 V TA = 25°C 0 0.2 0.4 0.6 0.8 1

0.2

= 400 to 700-nm Monochromatic Light VADB = 12 V TA = 25°C 0 0.2 0.4 0.6 0.8 1

0 Normalized Spatial Frequency 0 6.3 12.5 18.8 25.0 31.3

0 Normalized Spatial Frequency 0 7.3 14.6 21.8 29.1 36.4

Spatial Frequency Cycles/mm

Spatial Frequency Cycles/mm

Figure 6
NOISE SPECTRUM OF OUTPUT AMPLIFIER
1000 VADB = 12 V TA = 25°C 1 VADB = 12 V TA = 25°C

Figure 7
CCD SPECTRAL RESPONSIVITY
100% 50%

Hz

100

Responsivity A/W

20% 0.1

Noise nV/

10%

10

5% 3% 2%

1 103

104

105 f Frequency Hz

106

107

0.01 300

500

700

900

1100

1300

Incident Wavelength nm

Figure 8

Figure 9

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TC211 192- в 165-PIXEL CCD IMAGE SENSOR
SOCS008B JANUARY 1990

TYPICAL APPLICATION DATA
1 7 GND GND VCC CK 14 8 VCC

Master Oscillator VSS V

TMS3473B IALVL1 CLK IAG CMP ABG CBNK GT1 CSYNC S/H SRG TRIG User-Defined Timer 1 2 3 4 5 6 VCC 7 8 9 10 IALVL I/N IAIN ABIN MIDSEL SAIN PD GND VABG+ VSS VSS IASR ABSR VCC ABLVL IAOUT ABOUT SAOUT VCC VABG 20 19 18 17 16 15 14 13 12 11

22 k ADB 47 k 2.2 k

ABLVL 1 2 VABG ADB 3

S/H

TC211 ABG VSS ADB IAG SRG 6 ADB 5

5 k

ADB 4 2N3904 3 2 500 4 VDD 1 k 7 EL2020 6

VABG+

Parallel Driver

OUT

Image Sensor SN28846 1 2 VCC 3 4 5 6 7 8 9 10 SEL0OUT VSS GND SEL0 PD NC SRG3IN VCC SRG2IN SRG3OUT SRG1IN SRG2OUT TRGIN SRG1OUT NC TRGOUT SEL1OUT VCC VSS SEL1 Serial Driver 20 19 18 17 16 15 14 13 12 11

VCC

TL1591 1 2 3 4 ANLG ANLG ANLG ANLG VCC IN GND OUT DGTL VCC DGTL IN DGTL GND SUB GND 8 7 6 5

S/H

Sample-and-Hold OUT

SUPPORT CIRCUITS DEVICE SN28846DW TMS3473BDW TL1591CPS PACKAGE 20 pin small outline 20 pin small outline 8 pin small outline (EIAJ) APPLICATION Serial driver Parallel driver Sample and hold FUNCTION Driver for SRG Driver for IAG, ABG Single-channel sample-and-hold IC

Figure 10. Typical Application Circuit Diagram

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TC211 192- в 165-PIXEL CCD IMAGE SENSOR
SOCS008B JANUARY 1990

MECHANICAL DATA
The package for the TC211 consists of a ceramic base, glass window, and a 6-lead frame. The glass window is sealed to the package by an epoxy adhesive. The package leads are configured in a dual-in-line organization and fit into mounting holes with 2,54 mm (0.1 inch) center-to-center spacings.
7,54 (0.297) 7,14 (0.281) 1 7,82 (0.308) 2 7,24 (0.285) 3 6

5

4

2,54 (0.100)

4,45 (0.175) 0,31 (0.012) 0,23 (0.009) 7,62 (0.300) 2,54 (0.100) 0,48 (0.019) 0,38 (0.015) 1,30 (0.051) 1,04 (0.041)

7/94 NOTES: A. Dimensions are in millimeters and parenthetically in inches. Single dimensions are nominal. B. The center of the package and the center of the image area are not coincident. C. The distance from the top of the glass to the image sensor surface is typically 1 mm (0.04 inch). The glass is typically 0.020 inch thick and has an index of refraction of 1.52.

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IMPORTANT NOTICE Texas Instruments (TI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. TI warrants performance of its semiconductor products and related software to the specifications applicable at the time of sale in accordance with TI's standard warranty. Testing and other quality control techniques are utilized to the extent TI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except those mandated by government requirements. Certain applications using semiconductor products may involve potential risks of death, personal injury, or severe property or environmental damage ("Critical Applications"). TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS OR OTHER CRITICAL APPLICATIONS. Inclusion of TI products in such applications is understood to be fully at the risk of the customer. Use of TI products in such applications requires the written approval of an appropriate TI officer. Questions concerning potential risk applications should be directed to TI through a local SC sales office. In order to minimize risks associated with the customer 's applications, adequate design and operating safeguards should be provided by the customer to minimize inherent or procedural hazards. TI assumes no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor does TI warrant or represent that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other intellectual property right of TI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used.

Copyright © 1995, Texas Instruments Incorporated