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Äàòà èçìåíåíèÿ: Thu Apr 14 20:35:03 2011
Äàòà èíäåêñèðîâàíèÿ: Mon Oct 1 22:59:59 2012
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XMM­Newton CCF Release Page: 1
XMM­Newton CCF Release Note
XMM­CCF­REL­273
EPIC MOS response
S. Sembay, R. D. Saxton, M. Guainazzi
24 March 2011
1 CCF components
Name of CCF VALDATE EVALDATE Blocks changed XSCS flag
EMOSn REDIST 0093.CCF 1999­12­10 2000­10­03 CCD REDISTRIBUTION­n NO
EMOSn REDIST 0094.CCF 2000­10­03 2001­04­22 CCD REDISTRIBUTION­n NO
EMOSn REDIST 0095.CCF 2001­04­22 2001­11­07 CCD REDISTRIBUTION­n NO
EMOSn REDIST 0096.CCF 2001­11­07 2002­05­26 CCD REDISTRIBUTION­n NO
EMOSn REDIST 0097.CCF 2002­05­26 2002­11­05 CCD REDISTRIBUTION­n NO
EMOSn REDIST 0098.CCF 2002­11­05 2004­01­14 CCD REDISTRIBUTION­n NO
EMOSn REDIST 0099.CCF 2004­01­14 2005­02­14 CCD REDISTRIBUTION­n NO
EMOSn REDIST 0100.CCF 2005­02­14 2006­03­22 CCD REDISTRIBUTION­n NO
EMOSn REDIST 0101.CCF 2006­03­22 2007­04­24 CCD REDISTRIBUTION­n NO
EMOSn REDIST 0102.CCF 2007­04­24 2008­05­28 CCD REDISTRIBUTION­n NO
EMOSn REDIST 0103.CCF 2008­05­28 2009­07­01 CCD REDISTRIBUTION­n NO
EMOSn REDIST 0104.CCF 2009­07­01 2010­08­03 CCD REDISTRIBUTION­n NO
EMOSn REDIST 0105.CCF 2010­08­03 NONE CCD REDISTRIBUTION­n NO
Where the n refers to the MOS­1 and MOS­2 cameras in EMOSn and to the 7 CCDs of
each camera in CCD REDISTRIBUTION­n.
2 Changes
This is a small change which a#ects the normalisation of the silicon fluoresence function in
all of the CCF elements. The normalisation value has been reduced from 0.015 to 0.003.
3 Scientific Impact of this Update
This change leads to a better modelling of the instrumental silicon feature. In figure 1
it can be seen that, with the previous set of CCFs, the silicon fluoresence line was being
over­modelled, resulting in negative residuals in spectral fits. This has now been resolved.

XMM­Newton CCF Release Page: 2
0.6 0.8 1 1.2 1.4 1.6 1.8 2
0
0.01
0.02
0.03
0.04
normalized
counts
s
-1
keV
-1
Energy (keV)
Input Energy = 2.9 keV
MOS1 Ground Calibration Data
Figure 1: Ground calibration data for MOS1, CCD1 showing the relative strengths of the Si Fluoresence
line at 1.74 keV to the Si Escape line at 1.16 keV (=2.90­1.74 keV) for an input energy of 2.9 keV. The
strength of the Si fluoresence feature within the model RMF was set incorrectly as can be seen by the
black curve. The red curve shows the corrected model.
In figures 2 and 3 the practical improvement that can be expected, due to this change, in
a bright continuum source is shown for both cameras.
4 Estimated Scientific Quality
The weak Silicon fluorescence feature will now be modelled in the response matrix to an
accuracy of # 5%.
5 Test procedures and results
Reponse matrices have been generated for on­axis sources for a range of dates, for both
of the MOS cameras. The residuals between 1.5 and 2.0 keV have been investigated and
found to be improved in all fits.
6 References

XMM­Newton CCF Release Page: 3
0.01
0.1
1
normalized
counts
s
-1
keV
-1
MOS1 best fit
3C273_1299_0414190101
1
0.2 0.5 2 5
0.8
0.9
1
1.1
1.2
ratio
Energy (keV)
0.01
0.1
1
normalized
counts
s
-1
keV
-1
MOS1 best fit
3C273_1299_0414190101
1
0.2 0.5 2 5
0.8
0.9
1
1.1
1.2
ratio
Energy (keV)
Figure 2: A comparison of the residuals generated by the best fitting model to
the MOS­1 observation 0414190101 of 3C273. The top panel uses the old Si Flu­
oresence line normalisation and the lower panel uses the new value. A noticeable
improvement is visible around 1.8 keV.

XMM­Newton CCF Release Page: 4
0.01
0.1
1
normalized
counts
s
-1
keV
-1
MOS2 best fit
3C273_1299_0414190101
1
0.2 0.5 2 5
0.8
0.9
1
1.1
1.2
ratio
Energy (keV)
0.01
0.1
1
normalized
counts
s
-1
keV
-1
MOS2 best fit
3C273_1299_0414190101
1
0.2 0.5 2 5
0.8
0.9
1
1.1
1.2
ratio
Energy (keV)
Figure 3: A comparison of the residuals generated by the best fitting model to the
MOS­2 observation 0414190101 of 3C273. The top panel uses the old Si Fluoresence
line normalisation and the lower panel uses the new value. A major improvement
is visible around 1.8 keV.