... In dark as well as at low photoexcitation power with photon energies smaller than the Alx Ga1 x As barrier band gap, the samples exhibit a p -i -n diode I-V characteristic I 10 nA for applied biases ranging from 0.8 to 1 V . ...
... b) if the energy of two solidliquid interfaces 2 SL is lower than the GB energy GB ... wets a GB only if the GB energy, GB , is higher than the energy of two solidliquid ...
... Melt wets a GB if the GB energy, GB, is higher than the energy of two solidliquid interfaces, 2 SL. ... energy аG needed for the formation of this phase can be compensated if the condition of full wetting, GB >2 SL, is fulfilled ...
... In dark or at low-laser photoexcitation power, for an exciting photon energy lower than the Alx Ga1 x As barrier band gap resonant excitation , the samples behave like typical p-i-n diodes, with a current smaller than 10 nA in the whole range of bias used ...
... Akademichna st. 1, Kharkiv 61108, Ukraine 123 J Mater Sci (2011) 46:43364342 4337 from incomplete to complete GB wetting can be observed if the energy of the two solidliquid interfaces, 2rSL, becomes lower than the GB energy, i.e., rGB [ 2rSL ...
... energy (copper, tin, zinc), the tilt grain boundaries belong to 1020% of the grain ... energy spectrum of the tilt boundaries begin ning from zero energy or from GB( =3 ... energy to the grain boundaries of the general type with the highest energy ...