... processes, and SiO evaporation are used to define the area of the SDBS ( S 10 m 2 ... a high transparency of the barrier, R N S 100 m 2 .12 The barriers in our SDBS's ...
... 79 737 [19] Krasnov V M 2006 Phys. Rev. Lett. ... 97 257003 [20] Maksimov E G, Arseev P I and Maslova N S 1999 Solid State Commun. ... S-O, Motzkau H, Rydh A and Krasnov V M 2011 Phys. Rev. B 83 100510(R) [23] Ioffe L B ...
... W, of the FFO selected for TELIS project are 400 m and 12 - 16 m, respectively ... 4. FFO Double-dipole twin SIS 0.8 m HM 1.2 m 2 2 400 * 16 m2 Figure 4. ... M., Yagoubov, P. A., de Lange, A., Selig, A. M., Koshelets, V. P., Ellison, B. N ...
... a, V.V. Khodos c, V.L. Vaks c, A.M. Baryshev b, P.R. Wesselius b, J. Mygind d a ... SO2 gas spectral line at 326.867 GHz has been demonstrated using a 1-m long gas cell ...
... These circuits are diminutions as L = 400µ m and W0 = 16µ m for main FFO and L = 200µ m and W = 8µ m for "side" FFO. ... sample made of additional LJJ(width 8 µ m, length 200 µ m), which is connected to the main LJJ (width 16 µ m, length 400 µ m ...
... design a unit cell size of 522 m 522 m is considered which would allow about 30 unit ... of Silicon of 140 m and distance to the backshort of 160 m. The imaginary part of ...
... 9902-18315). References [1] A. Dmitriev, V. Ivanov and M. Lebedev. ... 732-761, 1993. [3] M. Kennedy. Chaos in Colpitts oscillator". ... Proc. of NDES'97, Moscow, Russia, pp. 262267, 1997. [9] C. Wegene & M. Kennedy." ...
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