... This damage causes low energy redistribution changes Enhanced dark current at raised temperatures has been seen in CCDs illuminated with a focussed beam at the Panter facility (EPIC EOBB and Swift XRT) Have so far not been able to detect the low energy ...
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Ссылки http://xmm.vilspa.esa.es/calibration/documentation/epic_cal_meetings/200610/Abbey_testing.pdf -- 1549.2 Кб -- 14.05.2014 Похожие документы
... For example, after krads of low energy protons, around 60 dark spike pixels were found in an EEV TV format CCD, with -70 C dark current generation rates of ~5-10 electrons per second [Holland et al]. ...
... The temperature dependence of dark current is of the form . ... bandgap energy, but for individual generation sites E may be a trapping state energy ... defects which give rise to individual dark current spikes , most dark current arises ...
... Dark Frames D Lumb April 27, 2001 1 CCF components Name of CCF VALDATE List of Blocks changed CAL VERSION XSCS flag EMOS1 DARKFRAME 0007.CCF 20000101 DARKFRAME CCDn NO OFFSET CCD1 EMOS1 DARKFRAME 0007.CCF 20000101 DARKFRAME CCDn NO OFFSET CCD1 2 ...
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Ссылки http://xmm.vilspa.esa.es/docs/documents/CAL-SRN-0074-1-0.ps.gz -- 43.6 Кб -- 04.05.2001 Похожие документы
... Low energy noise on the MOS CCDs p. 9/1 No correlation w/ RAWY periodicity Noise appears as dark/bright rows (same RAWY), but all noise tracks brighten/darken together. ...
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Ссылки http://xmm.vilspa.esa.es/calibration/documentation/epic_cal_meetings/200904/chen-anomalous-states.pdf -- 2304.0 Кб -- 14.05.2014 Похожие документы
... Next: Energy resolution Up: Charge Coupled Devices (CCDs) Previous: Contrasting ... Energy resolution . Detection Efficiency . Deep Depletion . Front Illumination . ... Field of View . Dark current and cooling . Modes of Operation . ...
... Next: Dark current and cooling Up: CCD Scientific Performance Previous: Particle Background Rejection . ... To attain high sensitivity, particularly at the highest energies, designs of the X-ray optics for the major observatories ...
... where E is the photon energy, =3.68eVper electron is the charge conversion factor, r the system noise in electrons (which may include readout and dark current noise), and F the Fano factor for silicon (0.115 [Alig et al]). ...
... All the E are then corrected for the difference between the dark map and the local offset, before building the internal background map (as described above) and building the PHA energy (in MAKE_E). ...