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Si, CBPLD
.. , .. , .. , ..
E-mail: vrocheva@mail.ru The Si thin films on sapphire substrates (0001) at deposition temperatures from 20 0 to 650 0 have been obtained. The deposition was performed in the vacuum chamber at 10-6 Torr residual pressure, the Si target was ablated by a Q-switching YAG: Nd3+ laser =1,06 µm radiation; crossed-beam pulsed laser deposition method (CBPLD) used here makes it possible to avoid drops and clusters falling on the film surface. By the X-ray diffraction method it was established that all the deposited films were amorphous. The dependence of films morphology on deposition temperature has been investigated by the atomic-force microscopy (AFM) method. The films surface analysis by the F method showed that there exists the optimum deposition temperature at which the surface has the homogeneous smooth character with the roughness below 1 nm.

, . "" , ( , ) [1,2]. - () [2,3]. . [2,4-6]. (crossedbeam pulsed laser deposition method, CBPLD), [7]. . 1. , 10-6 . . :Nd3+ . 15 , 300 . , 30 . 0,65 2. 5 .


. 1. : 1 ­ :Nd3+ , 2 ­ , 3 - , 4 - , 5 - , 6 ­ , 7 ­ , 8 - , 9 - , 10 - , 11 - .

20, 300, 500 650 0. . 1 /. 90 - () . . 2, 3, 4. , 10 300 5 70 (. 4). : 300 0 , 500 0 , 650 0 ( 300 0). 100 0 , .


.2. 90 : a ­ 20 0 , b - 300 0, c ­ 500 0, d ­ 650 0.

, 1 nm (. 3).

. 3. , 5000 .


. 4. , 5000 .

2- 1 mm Ni , K- WL-. . 5 , 20, 300, 500 650 0. , , , .

.5. , 20 0, 300 0, 500 0 650 0.

, , Si. , CBPLD,


1 nm ­ 300 0. , . 09-08-00291, 0902-12108, 09-08-01053.
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