22.07.09 : Principal Research Scientist (Laser Technologies)
Company:
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Samsung Advanced Institute of Technology
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Department:
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Photonics Lab
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Location:
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Suwon, South Korea
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Base Pay:
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Negotiable
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Other:
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Relocation package available
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Employee Type:
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Full-time, Regular member
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Industry:
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GaN LD Project
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Required Education:
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Doctor of Philosophy (PhD) or Master of Science (MS) in Optoelectronic Device Technologies (Semiconductor Laser Science and Technology)
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Required Travel:
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Relocation to Seoul, South Korea is required
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Job Summary
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Development of optoelectronic device technologies and semiconductor laser science and technology
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Responsibilities and Duties:
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- Substrates
- Hetero and homo-epitaxial growth of compound semiconductor
- p-type and n-type doping technology
- Metal contact technology
- Wet and dry etching technology
- Optoelectronic device packaging
- Device design and simulation
- Device characterization
- AlGaInN-based laser structure design and band-gap engineering
- Epitaxial growth technology of laser structures using MOCVD
- Defect engineering for high performance and long lifetime laser diodes (ELO and Pende epitaxy technologies)
- Laser device design and fabrication such as p-activation, contacts, as well as wet and dry etching including ICP-RIE/CAIBE
- Facet fabrication by dry etching/cleaving
- Flip-chip bonding technologies
- Laser diode characterization technologies
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Qualifications:
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Contact Information:
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In order to apply, please, fill out and send us the Standard Samsung Electronics Curriculum Vitae (CV) in English at the email (with Subject Line: "Professional Resume"): jobfair@samsung.ru
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Информация перенесена в архив 22.08.09
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