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ZnO.
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, , , E-mail:buka17@list.ru The n- and -type ZnO films on the sapphire substrates (0001) have been received by the pulse laser deposition method from ceramic targets. GaN was entered in the ZnO ceramic targets for the p-type ZnO films fabrication. As buffer gas were used air, oxygen and nitrogen oxide. The thermal and laser annealing of the ZnO films have been lead. During annealing process the electric resistance was measured. The photoluminescence spectra of the ZnO films were received. Before annealing a number of the ZnO films alloyed by nitrogen did not give the PL in the UV region, but during annealing process there was the activation of the nitrogen acceptor centers and the PL appeared in the UV region. The dependence of amplitude and the PL peak position of the ZnO films was established before and after annealing from the films doping level.

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1. H.Kim, A.Cepler, M. S.Osofsky, R. Y.Auyeung, and A.Pique Fabrication of Zr-N codoped ptype ZnO thin films by pulsed laser deposition, Appl. Phys. Lett, 90, 203508 (2007).