Äîêóìåíò âçÿò èç êýøà ïîèñêîâîé ìàøèíû. Àäðåñ îðèãèíàëüíîãî äîêóìåíòà : http://danp.sinp.msu.ru/pci2013/program2013.pdf
Äàòà èçìåíåíèÿ: Tue Apr 23 14:01:08 2013
Äàòà èíäåêñèðîâàíèÿ: Thu Feb 27 22:24:52 2014
Êîäèðîâêà:
. .. - . ..

LIII
( 28 ­ 30 2013)

2013


2 539.1.01.08 22.37. 29 . .. : .. , .. , .. , .. , .. , ..

29 LIII / . . .. . ­ .: - , 2013. ­ 182 . , .

. .. , 2013


I 28 , , 1030 ­ 12
00

1

.. ­ .. 1. .. , . . Pd- - . (15 ) .. , .. . ( : ?). (15 ) .. , .. , .. , .. . . (15 )
00 30 00

3

2.

4

3.

5

12 ­ 12 28 , , 1230 ­ 14 II

.. 1. 2. 3. 4. .. , .. . . (15 ) 6 .. , .. . . (15 ) 7 .. , .. , .. , .. . . (15 ) 8 .. , .. , .. . . (15 ) 9


II 5. .. , .. , .. , .. . Fe-Ni-Cr. (15 ) 10

1400 ­ 1500 1. .. , .. , .. , .. . . 2. .. , .. , .. , , .. , .. , .. , .. . 10 . 3. .. , .. , .. . , . 4. .. , .. . -. 5. .. , .. . . 6. .. , .. . 7. .. , .. . . 8. .. , .. , .. , .. . .

11

12

13 14 15 16 17

18


III 9. . . , .-. , . . . . 19 10. .. , .. , .. . - . 20 11. .. , .. . . 21 12. .. , .. . -

22 .
13. .. , .. . . 23 14. .. . 24 15. .. . . 25 16. .. . . 26 17. .. , .. . . 27 18. .., .. , V.B. Vassilenko. . 28 19. .. , .. , .. , .. , .. . , . 29 20. .. . . 30


IV 21. .. , .. . . 22. Yuriy Kudriavtsev and Rene Asomoza. "Ion annealing" with high current, low energy ion beam and its technological application. 23. G.V. Kovalev. Polyelliptic coordinates for study of scattering of particles in arbitrary bent crystal. 24. .. , . . . 25. .. , .. , .. . 3D . II 28 , , 1500 ­ 16
30

31 32 33 34

35

I

.. 1. .. , .. , .. , .. . -5 5 ,7 . (15 ) 2. .. , .. , .. . . (15 ) 3. .. , .. , .. . . (15 )

39

40

41


V 4. .. , .. , .. . . (15 ) 5. .. , .. , .. , .. , .. , .. , .. , .. , .. , .. . . (15 ) 1630 ­ 1700 28 , , 1700 ­ 18
45

42

43

II

.. 1. .. , M.P. Anania, . Ferrario, .. . . (15 ) .. , . . . . Yu.L. Pivovarov, Y. Takabayashi, T.A. Tukhfatullin. Scattering of 255 MeV electrons at (220) channeling in silicon crystal. (20 ) +.. , .. , .. . . (15 ) .. , C.. . . (15 ) . . . () . (15 )

44

2.

45 46

3.

47 48 49

4. 5.


VI 1. .. , .. , .. , .., .. , .. , .. . . .. , .. , .. , .., .. , .. , .. . - . .. , .. . . .. , .. , .. , .. . . .. , .. , .. . . .. , .. , .. , .. . . .. , , .. . . .. , .. . . .. , .. , .. . Si W.

50

2.

51

3.

52

4.

53

5.

54 55 56 57

6. 7. 8. 9.

58


VII 10. .. , .. , .. . e-/e+ C/Si/Ge. III , 29 , , 1000 - 1130 I .. 1. .. , .. , .. , .. , .. , .. , .. , .. . . (15 ) 63 2. .. , .. , .. , .. , .. . -AXF-5Q . (15) 64 3. .. . , H+. (15 ) 65 4. .. , .. , .. , .. . . (15 ) 66 5. .. , .. , .. . .(15 ) 67

59


VIII 1130 ­ 1215 29 , , 1215 ­ 14
00

II

.. 1. .. , . . (15 ) 2. V.P. Popov, I.E. Tyschenko, T.S. àvila, and P.L. Grande. Nanometer thin strained SGOI layers studied by MEIS shadowing and blocking effects. (15 ) 3. .. , .. , .. . , . (15 ) 4. .. , .. , .. , .. , .. , .. , .. . . (15 ) 5. .. , .. , .. , .. , .. . F . (15 ) 6. .. , .. , .. , .. . - . (15 ) 1400 ­ 1500 1. .. , .. , .. , .. , .. , .. . - - . 74 .. , .. , A.. , .. , .. , .. . GaN . 75

68 69 70

71 72

73

2.


IX 3. .. , .. , C.. . - . .. , .. . , (001) Au, . .. , .. . , (001) Ni (001) Au. .. , .. . Si, P+. .. , .. , .. , .. . . .. . --. .. , .. , .. . Fe/Co/Si Co/Fe/Si. .. , .. , .. , .. . P PF4. .. . . .. . - . .. , .. , .. , .. . . .. , . , .. , .. . - GaN .

76

4.

77 78 79

5. 6. 7.

80 81 82

8. 9. 10.

83 84 85

11. 12. 13.

86

14.

87


X 15. 16. .. , . , .. , .. . . .. , .. , .. , ... . .. , .. , .. , .. . : « ». .. , .. , .. . , . .. , .. , .., .. , .. . , . .. , .. , .. . .

88

89

17.

90

18.

91

19.

92 93

20.


XI IV 29 , , 1500 ­ 16
30

1

.. 1. .. , . , .. , .. , .. . , t Ta|(CD2)n|Ta . .. , . , .. . . ( , 15 ) 2. .. , .. , .. , .. , .. . . (15 ) 3. .. , .. , .. , .. , .. , .. , .. . . .. , .. , .. , .. , .. , .. . ( , 15 ). 4. .. , .. , .. . (15 ). 5. .. , .. , .. , .. , H. Cheong. CZTS PIXE -PIXE (15 ). 6. .. , .. , .. , .. , .. , .. , .. , .. , .. , .. . - «» 12 .

97

98

99

100

101

102 103

104


XII 1630 ­ 1715 - . 29 , , 1715 ­ 18
45

II

.. 1. .. , .. . - . .. , .. , .. . (Ti, W), . .. , .. , .. . PbSnS, ( ­ 20 ). .. , .. , . . , .. . . (15 ). .. , .. , .. , .. . . .. , .. , .. , .. , .. . . .. , .. , .. . . ( ­ 20 ) .. , .. , .. , .. , .. . - (15 ). .. . (15 ).

105 106

107

2.

108 109

3.

110

111

4.

112 113

5.


XIII 6. .. , .. , .. , .. . , . .. , .. , .. , .. , .. , .. , .. . . .. , .. , .. , .. , .. , .. . «-» . .. , .. , .. , .. . , . ( 20 ) 1. .. , .. . Cu/Al , . 2. .. -, .. , .. , .. , .. , .. , .. , .. . , . 3. .. , .. . , - . 4. .. , .. , .. , .. . . 5. .. , .. , .. , .. , .. . -. 6. .. , .. .

114

115

116

117

118

119

120 121

122 123


XIV 7. .. . . 8. .. . . 9. .. , .. , .. , .. . - . 10. .. , .. , .. . . 11. .. , .. , .. . . 12. .. . SI . . 13. Mohamed S. Badawi, Mohamed E. Krar, Ahmed M. El-Khatib. Validation of the FEPE calculation for a detection system composed of two -detectors using spherical sources. 30 , , 1000 ­ 1130 I .. 1. .. , .. , .. , .. , .. . . .. , .. , .. , .. . -Mn-O ( = Nd, Sm, La ..) . (. , 20 ) 2. .. , .. , .. , .. . . .. , .. , .. , .. . ( , 20 ).

124 125

126

127 128 129

130

131

132 133 134


XV 3. .. , .. , .. . .. (15 ) 4. .. , .. , .. , .. , .. . . (15 ) 5. .. , .. , .. . . (15 ). 1130 ­ 1215 ­ 1. .. , .. , .. , .. , .. , .. , .. .. , .. . - . 2. .. , .. . (Cs ­ Ni, Na ­ Ni, N ­ Si, Ba ­ Si). 3. .. , . , .. , .. . Si . 4. .. , .. , .. , .. . u Ag . 5. .. , .. , .. . Ga1-xNaxAs/GaAs. 6. .. , .. , .. , .. . CoSi2/Si, . 7. .. , .. , .. , .. . -

135

136 137

138 139 140

141

142

143

144


XVI 8. .. , .. , .. . .. . - . 9. .. , .. , .. . . 10. .. , .. . Si(111) . 11. .. , .. , .. , .. , .. , .. , .. , .. . . 12. .., .. , .. , .. , .. . - IN-SITU . 13. .. , .. , .. , .. , .. , .. . , . 14. .. , .. , .. , .. , .. , .. , .. , .. .. . . 15. . , .. , .. , .. . . 16. .. . . 17. .. , .. . nSi. 1215 ..

145 146

147

148

149

150

151

152 153 154


I




2


3 Pd- -
1)

.. 1), . 2) , .., , 2) Narodove Centrum Badan Jadrowych, Otwock-wierk, Poland

(DHPC) 1,2 . DHPC . DHPC - 10 18 -25 11-13 A. DHPC, () (). , , Pd- (99.995), , . 6C, 8O, 11Na, 12Mg, 13Al, 14Si, 22Ti, 25Mn, 26Fe, 29Cu, 30Zn , 47Ag, 73Ta, 74W, 78Pt, 79Au 82Pb. , (. [1-4]). 1. 2. 3. 4. A.Yu.Didyk, R.Winiewski. European Physics Letters (EPL), V.99, 2012, P.22001-P1-22001-P6. A.Yu.Didyk, R.Wisniewski, T.Wilczinska-Kitowska. Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques, 2013, Vol. 7, No. 2, P. 239­247. A.Yu.Didyk, R.Winiewski Physics of Particles and Nuclei Letters. 2012. V.9. No. 8. P. 615-631. A.Yu.Didyk, R.Winiewski. . 2013. .10, 3(180). .437-457; E15-2012-35, , , 2012, p. 25.


4 ( : ?) .. , .. .., , ( - ) ( ). . /1 3/, . D( E , r ) 1 | r | 1 : D( E, r ) e
1r 2W ( E )

; W ( E ) (2 / )



2 M [V ( x) E ]dx ,

. ) . | r | 1 - /1-3/. "" Ek kT . - /1-3/

x p / 2 1 r 2 , E t / 2 1 r 2 | r | 1 ,
d d Pd d , kT 0.025eV PdD [4]. 1. 2. 3. 4. .. , .. . , 80, 5, . 23 (2010) .. , .. ,.. . , 141, . 276 (2012) .. , .. , .. . , 142, . 627 (2012) P.L. Hagelstein, D.G. Letts, D. Cravens. JCMNS, 3, . 59-76 (2010).


5 .. , .. , .. , .. , . , , , . , , , , . , . , . - ( 10-6 10-7 ). 643 K (E = 0,083 ), 300 ( = 0,039 ), , , E = 0,044 . , 923 ( = 1,2 ), X 450 ( = 0,058 ), E = 0,062 . , , -, 0,018 . .


6 .. , .. . .. , , , /1/ (. 1). , . , .1 , , , -, . . 1. Shul'ga N.F., Trofymenko S.V. // Phys. Lett. A, 2012, v. 376, iss. 47-48, p. 3572.


7 .. , .. , , Fq , Zt (5Zt53). Cg-s (Cg-s 1), /1/. Cg-s(Zt) ( ). Fq , q ­ Fq ( E ) 1 ,
q

(.1) Cg-s(Zt=13) 1,40.

c.1 C3+ C4+ . Cg-s=1,40: 1­ F3; 2­ F4. : - F3 ,O - F4 /2-4/.

1. 2. 3. 4.

.., .., .. // . 2013. .3. .35. Preikschat E., Vandenbosh R. // Nucl.Instr.Meth. 1967. v.46. p. 333 Lennard W.N. et al. // Phys. Rev. A. 1981. V.24. P.2809. Schmitt C. et al. // Nucl.Instr.Meth. B. 2010. V.268. P.1551.


8 .. 1, .. 1, .. 2, .. 2 - - , , - .., ..
1

2

, ( ) ( ) , , , , .. (). , . -. , . , . , (. .) 10%. 3%.


9 .. , .. , .. , , (, - 3 Mg O 2 SiO2 2 H2O R 80 A /1/) : )
U




4 Z Re

2

S





0

K

0



2 4R R sin2 2



b d ;



) ( )

e2 1 2 4 R 1 2 R ln 1 , 81 1 2 2 R R K 0 x ­ , Z b ­ U
, S ­ . U U U , .
R 1 2
U(), , A

p

. 1. .., .. -. ­ .: - . -, 1989, 176 .


10

Fe-Ni-Cr .. , .. 2), .. 1,2), .. 1) 1) , -, 2) SCK-CEN, ,
1,2)

, , . ( , , , ). /1/, . /2/ /3/ Fe70-Ni10-Cr20 , -. /4/. 1. Zinkle S.J et al. // J. Nucl. Mater., 1993, V.206, P.266 2. Osetsky Yu.N., Bacon D.J., Mohles V. // Phil. Mag., 2003, 83, P.3623. 3. Bonny G. et al. // Modelling and simulation in materials science and engineering, 2011, 19(8), #085008. 4. .. . // , 2013, 3, .17


11 .. 1), .. 2), .. 2), .. 3) . .. , , 2) «», , 3) , ,

1)

. , , . , [110] , /1/. /2/, /3, 4/. « - », 16.740.11.0147 02.09.2010, 2.2694.2011 18.01.2012. 1. 2. 3. 4. . . ., , 1988. Feit M.D., Fleck J.A., Jr., Steiger A. // Journal of Computational Physics, 1982, v. 47, p. 412-433. .. . // , 2013, 3, .1 -6. Shul'ga N.F., Syshchenko V.V., Neryabova V.S. // NIM B, 2013, DOI: 10.1016/j.nimb.2013.01.022.


12 10 .. 1), .. 1), .. 1), 1), .. 1), .. 1), ..1), .. 2) 1) , «», , 2) . .. , 10 . . , . - e . , /1/, . , , , , . . . , , , . , , .
-

1. . . , . . , . . , .. , , .. , .. , .. . // 3, .81-85 (2013)


13 , .. , .. , .. . . , . , /1-3/ () ( ) ( ) . , , , , , . . . 1. 2. 3. Noltemeyer M., Bertram F., Hempel T. et al., //, Journal of Materials Research, 2012, V. 27. Is. 17, 2225-2231. .., Noltemeyer M., Christen J. ., //, . , 2012, . 76. 9, 1082-1085. .., Noltemeyer M., Christen J. ., //, , 2012, 6, 41-46.


14 - -.
1)

.. 1), .. 2) , . 2) , .

- (. - , , .. , .. , .. , .. , .. , .. .). - . xn1 xn yn1 , yn1 yn k xn 1 xn xn yn , - (. [1,2]). x 2 RT N 3 a , x 2 - , R - , T ­ , N - , - , a - , - . a , . , 105 . 1. 2. .. . ­ .: , 2008, 428 . . ­ .: - , 1960., 755.


15 .. , .. , , i0 /1/:

E Se t dt Seq f i0, t , Seq /2/.



t

. 1. i+ . i+ 8108 /. ­ , ­ "" .

1. 2. .., ..// 2013, 3, .35. Teplova Ya.A., Belkova Yu.A., Yuminov Yu.A. // NIM 2005, B230, P.73.


16 .. , .. - .., .. [1] «» . , , , . .. , ( «»). , . , , .. , . , , . . , , «» . 1. . . , . . , // 2013, 4, . 1­6


17 .. , .. , --, , , . , . (1 ) , (2 ) - , . (3 ) (3) , . , . 1. 2. Taylor J.R. Scattering Theory: The Quantum Theory in No nrelativistic Collisions, John Willey & Sons, Inc. 1972, 477 p. .., .., .. . .: , 1986, 200 .


18
1) 2)

.. 1), .. 2), .. 2), .. 2) , «», . , ., « », . ,

TROPICS /1/, , , . -. . 1 , TROPICS, /2/.

. 1. 150 --, <111> . ­ ; ­ , ­ /2/. 22,79 . 10 . ­ 20000.

1. 2.

http://wwwinfo.jinr.ru/programs/jinrlib/tropics/index.html Scandale W., Vomiero A., Bagli E. et al. // Phys. Lett. B, 2009, V. 680, P. 301-304.


19
1)

. . 1), 2), .-. 2), . . 3), 4) , , 2) INFN, Sez. Roma La Sapienza, Rome, Italy 3) INFN, Laboratori Nazionali di Frascati, Frascati, Italy 4) . . . , ,

, /1/. /2,3/, , . , miscut- /1,2/. 1. 2. 3. Scandale W., et. al. // Phys. Lett B, 2012, 714, 231. Scandale W., et. al. // Phys. Lett B, 2011, 703, 547. Babaev A., Dabagov S.B. // J. Phys: Conf. Ser., 2012, 357, 012032.


20 -
1)

.. 1), ..1), ..2) , . , 2) , . ,

- . , /1/, , . - Zr16H , FLEUR /2/. . Zr16H. , . 1. 2. Zielinski A., Sobieszczyk S. // International journal of hydrogen energy, 2011, V. 36, P. 8619­8629. The Juelich FLEUR project [ ]. ­ : http://www.flapw.de.


21 .. 1), .. 2) , , () , ,
1)

2)

, . , , , . , , - , . : ) ; ) , . . , . , , : ) , ; ) , . , , , .


22 .. 1), .. 2) . .. , , . .. , ,
1)

2)

, /1/. , , , . , , , , . 1. .. , .. . // . X LII . . . . . :, , 2012, . 28.


23 ., .. . .. , , , (). , , «» . , , . . , , , /1/. . 1. .., .., .. . ­ -: ; « », 2008. -120 .


24 .. () .. , , /1/. . , () , . . . , ReaxFF /2/. 1. 2. Zhiyuan Zhu, Dezhang Zhu, Rongrong Lu. // Proc. of SPIE, V. 5974, P. 597413. Adri C. T. van Duin et.al // J. Phys. Chem. A 2001, 105, P. 9396


25 .. .. () , . /1,2/, , . , . /3,4/. , , . . 1. 2. 3. 4. Borka D, Petrovi S., Neskovi N. et .all // Phys. Rev. 2006. A.73. P. 062902. Mowbray D.J.,Mickovic Z.L.,Goodman F.O.,Wang YiuNian // Phys. Rev. 2004. B.70. P. 195418. Tu Y.H., Kwei C.M., Li Y.C., Tung C.J. // Phys. Rev. 2006. B.74. P. 045403. Segui S., Gervasoni J.L., Arista N.R. // Rad. Phys. and Chem. 2007. V. 76. P. 582.


26 .. . . . , , . , . 1, , , .

.1. , , , . , . , , , , 50 , (. .1). .


27 .. , .. , , /1/, . . , ( ) . , , - . , ( - ), . 0.1 1 .

103 K ~ 1 , 6 5 10 10 .
. , , , /2,3/ . 1. .. , .. . // 42- . .. 2012. .125. 2. Kallel H., Mousseau N.,Schiettekatte F.,// Phys.Rev.Lett.,2010, v.105, P.045503. .. , .. // . 2012. 9. ..87.


28 .. 1), .. 1), V.B. Vassilenko2 1) .., 2) NOVA University of Lisbon, Portugal
)

""

q( r , t ) T ( r , t ), c

20

T ( r , t ) GT ( r , t ) t G / c - .

T ( r , t ) q( r , t ), t

"" . n (2n / 2) / , n 0,1, 2... ( 0 )

T ( r , t ) 2T ( r , t ) GT ( r , t ), 2 t t t

T ( x, t ) ln t

1

T ( r , t ) GT ( r , t ) t

T ( x, t ) T0( )e x e T0( )e x e k cos / 1 sin , k / 2G .

i t k 1sin x





i t k 1sin x





t . 107 1012 c. n

vn Gn N / t . ( t ) . "" .


29 , 1) .. , .. 2), .. 2), .. 3), .. 1) 1) . ., 2) . .., 3) () ..., /1,2/ () , ( ). 0 1/ t . , U, mV 1, 2 0 2 ( ) /3/. 2L4 () 3 -2 4, L 0,0 0,2 0,4 0,6 t, s (. , L 2 ). 0 20 1 3 50 . . , L 10 ! 1. V.I. Vysotskii, V.B. Vassilenko, A.O. Vasylenko. Bulletin of Taras Shevchenko National Univ. of Kyiv, Series Rafiophysics, #2, 2013. 2. V.I. Vysotskii, V.B. Vassilenko, A.O. Vasylenko. ibid, Series Physics & Mathematics, #2, 2013. 3. .. , . ., .. , .. , .. , .. . , 2010, 12, . 53­63.


30 .. , , /1/, z , z p

2 , p p2 2 ,

p mv ­ , ­ p . /2/, Ta S Q . S ­ ,
z , Ta ­ , a /3/. , , , Q , , , . , , , Ta , . 1. 2. .. . ­ .: , 1981, 223 . Maksyuta M.V. Proceedings of the VIII International Conference "Electronics and applied physics", Taras Shevchenko National University of Kyiv Faculty of RadioPhysics, Kyiv (Ukraine), 2012, P. 185 ­ 186. Verlinde E. On the origin of gravity and the laws of Newton // JHEP, 2011, N. 4, P. 1 ­ 26.

3.


31 .. , .. , , /1/ 150 - - . , , . , , . , , , , , . , . 1. W. Scandale et al. // Phys. Lett. B, 2013, V. 719, P. 70.


32 "ION ANNEALING" WITH HIGH CURRENT, LOW ENERGY ION BEAM AND ITS TECHNOLOGICAL APPLICATION Yuriy Kudriavtsev and Rene Asomoza Cinvestav-IPN, MÈxico DF, MÈxico SecciÑn ElectrÑnica del Estado Solido, Departamento IngenierÌa ElÈctrica, CINVESTAV-IPN, Av. IPN#2508, MÈxico 07360, DF, MÈxico A detailed analysis of a sub keV ion sputtering of a solid let us conclude that formation of "thermal peaks" is really possible in dense materials under low energy (<1keV) bombardment by using medium mass ions. After P. Zigmund /1/ this regime is known as "knock -on" sputtering. Our conclusion comes from a simple phenomenological model: we explained this low energy "thermal peak" regime taking into account a radical increase of the energy density, released in ind ividual collision cascade, initiated by a primary ion in a near surface layer. Experimental energy distributions of Cu atoms, sputtered by Ar+ ions /2/ confirm our model. Perspective technological application of the new "ion beam a nnealing" technique is discussed in the report. REFERENCES 1. 2. P. Sigmund, Sputtering by ion bombardment ­ theoretical concepts, in Sputtering by particle bombardment I, edited by R. Behrisch, Springer-Verlag, Berlin, 1981, p.18 T. Mousel, W. Eckstein, H. Gnaser, Nucl. Instrum. Methods B 152, (1999) p. 36


33 POLYELLIPTIC COORDINATES FOR STUDY OF SCATTERING OF PARTICLES IN ARBITRARY BENT CRYSTAL G.V. Kovalev School of Mathematics, University of Minnesota, Minneapolis, MN 55455, USA There are only 4 orthogonal coordinate systems/1,2/: cartesian, polar, parabolic and elliptic, in which the method of separation of variables for SchrÆdinger (SE) or Helmholtz (H E) equations in 2D space can be applied. 3D space has 11 such orthogonal separable coordinates. We suggested a set of new coordinate systems/3/, which we called `polyelliptic' (e.g., 2D triangular and rectangular in Fig.1) and where each system is related to an arbitrary convex polygon (cylinder, cone, polyhedron, etc. for 3D case). It can be proved that the amount of such coordinates are infinite. These coordinates generalize the well known elliptic coordinates. All 2D polyelliptic coordinates have the following properties:
Fig.1

(a)The dashed lines and sides of n-polygon separate the XY-plane into 2n regions. Each region has a local elliptic coordinate system generated by one interfocal line. (b) It is possible to introduce a common coordinates µ, for the exterior of polygon including its perimeter. The coordinate lines of new common system are smooth everywhere outside the perimeter of the polygon and constitute the orthogonal system. The polyelliptic coordinate systems can give the exact solutions of many unsolved problems in quantum mechanics, solid state physics, diffraction theory and the theory of channeling. REFERENCES 1. Miller W., Jr. Symmetry and separation of variable, (1977). 2. Morse P.M., Feshbach H., Methods of Theoretical Physics, vol. 1-2, McGraw-Hill Book Co., New York, 1953. 3. Kovalev G.V. (to be published).


34 .. 1) , . 2) .. .. , , Athens University, Physics Department, Athens, Greece
1)

2)

, , , . . , 100 800 100 300, <100>, <110> <111>. - ASTRA /1/, , , , . , . 1. .., // . . . . , 2007, 3, .61.


35 3D- .. , .. , .. , , [1] , , (). , , Si , . Si(p,X)Mg -. , , Al Cu W. 1 W K Ta. -. W(p,X) , 3D- . 1. V. Ya. Chumanov, A. G. Kadmenskii, N. G. Chechenin. Ionization Effects of Heavy Components of Cosmic Radiation in the Protected Chips//Journal of Surface Investigation. X_ray, Synchrotron and Neutron Techniques, 2013, V.7, 2, . 254.


36


37

II


38


39 -5 5,7 .. , .. , .. , .. , . , [1] [2] , (), , 4-20 500 15 -33 , . , () . . - , 5,7 . , " ­ " . , 5,7 . , 14.37.21.0775 14.37.21.1295. 1. 2. Kaplin V.V., Uglov S.R., Zabaev V.N., Piestrup M.A. and Gary C.K. // Appl. Phys. Lett. 76, 2000, p. 3647. Kaplin V.V., Uglov S.R., Sohoreva V.V., Bulaev O.F., Voronin A.A., Piestrup M., Gary C., Fuller M. // NIMB 267, 2009, p.777.


40
1)

.. 1) 2), .. 1), .. 1) , . , 2) , . ,

, () . () . , /1-2/. /3/ : , . , , , - () /4/. . 1. 2. 3. 4. Abdrashitov S.V., Bogdanov O.V., Dabagov S.B., Pivovarov Yu.L. and Tukhfatullin T.A.// NIMB Proceedings, 2013, (Accepted for publication). Bogdanov O.V., Fiks E.I., Korotchenko K.B., Pivovarov Yu.L., Tukhfatullin T.A. //Journal of Physics: Conference Series, 2010, . 236, 1, Article number 012029 , . 9. .., .., .. ,//, . , , 2008, 4, . 35-41. Babaev A.A., Kunashenko Yu.P., Pivovarov Yu.L//XII Advanced Research Worcshop on High Energy Spin Physics (DSPIN-07), Dubna, JINR, 2007, . 29.


41 .. , .. , .. , , /1/. . KAlF 4, , 10 .
-0,25

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x c


-15

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Al

F

, . ( ). 1. .. . ­ .: , 1950, 968 .


42 .. , .. , .. , , . /1/. , 50 /2/. . /3/, - /4/, , , MAMI (. , ), SLAC (. , ), CERN (. , ). 1. .., .. . ., , 1993, 344 c. 2. Guidi V. et al. // Phys. Rev. Lett., 2012, v. 108, p. 014801. 3. .., .., .. // , 1984, . 87, . 250. 4. .., .., .. // , 1979, . 10, . 52.


43 .. , .. , .. , .. , .. , .. , .. , .. , .. , .. , . , , , , . . , . /1/. 0,9 0,76 . 1. 2. .. , .. , .. . // . , , 2005, 4, . 68-71. .., .., .. . // . : , 2010, 3(54), .200204.


44 .. 1), M.P. Anania2), . Ferrario2), .. 1,2) 1) «», 115409 , 2) INFN - LNF, 00044 , , (. /1/). , () . SEEDING LNF INFN . , . , SPARC_LAB LNF INFN, (COMB) (SEEDING) /2/. SEEDING ~ 266 (~ 4,7 ), 3 , ~ 160 - 5- (~ 7,75 ). 114 (~ 11 ) 80 (~ 15,5 ), .. , 7- 9- . , SPARC_LAB . 1. S. Suckewer, P. Jaegle, X-Ray laser: past, present, and future, Laser Physics Letters 6 (2009) 411. 2. http://www.lnf.infn.it/acceleratori/sparc_lab


45
1)

.. 1), . . 1) , ,

(RCE) [1]. H- , , RCE [23]. RCE (Z>>1) He- Li- HIMAC [4] SIS-18 GSI [5]. , . ( ) He- Li- , [4-5]. RCE He- Li- [4-5]. 1. 2. 3. 4. 5. .. , 2007, .70. 7, 1213. Pivovarov Yu.L. Nuclear Instruments and Methods in Physics Research, 1998, B 145, 96. Babaev A.A., Pivovarov Yu.L. 2012, Computer Physics Communications, 2012, V.183, 705. Azuma T. Nuclear Instruments and Methods in Physics Research, 2009, B 256, 109. Ananyeva A. et al. 16th Intern. Conf. on Physics of Highly Charged Ions, 2-7 Sept. 2012, Heidelberg, Germany. Book of Abstracts, P. 47.


46 SCATTERING OF 255 MEV ELECTRONS AT (220) CHANNELING IN SILICON CRYSTAL Yu.L. Pivovarov1, Y. Takabayashi2, T.A. Tukhfatullin 1 Tomsk Polytechnic University,Tomsk, Russia 2 SAGA Light Source, Tosu, Japan
1

The properties of both angular and spatial distribution of 255 MeV electrons at <100> axial channeling in thin silicon crystal has been investigated experimentally at SAGA light source /1 -2/ and by computer simulations /3/. The simulation of trajectories, angular and spatial distributions of electrons on the screen monitor has been pe rformed taking into account initial spatial as well as angular divergence of electron beam. Comparison of the experimental and simulation results shows a good agreement /3/. Both experimental data and simulations show the brilliant effect of so -called "doughnut scattering" (DS) that can be used for the diagnostics of the incident beam angular divergence. Recently, a new experiment on 255 MeV electron scattering at (220) planar channeling in 20 µm Si crystal was carried out at SAGA LS. In this work we studied (both experimentally and by means of computer simulations) the spatial and angular distributions of ele ctrons penetrating through the thin Si crystal at (220) alignment. The results are compared with DS at <100> axial channeling. REFERENCES 1. 2. 3. Takabayashi Y., Kaneyasu T., and Iwasaki Y., Nuovo Cimento C 34 (4) (2011) 221. Takabayashi Y., Korotchenko K. B., Pivovarov Yu. L., Tukhfatullin T. A. NIMB PROCEEDINGS (In Press) O. V.Bogdanov, Yu. L. Pivovarov, Y. Takabayashi, T.A. Tukhfatullin , J. of Phys.: Conf. Ser. 357 (2012) 012030.


47 .. 1,2) , .. 1), . . 1) 1) , , , ,

2)

, /1-5/ , () . , - ( ),

1 n( )



- . DIRC (Detection of Internally Reflected Cherenkov light) - . 6. Altapova V.R., Bogdanov O.V. and Pivovarov Yu.L. // Nuclear Instruments and Methods in Physics Research, 2009, B 256, p. 109. 7. Bogdanov O.V. and Pivovarov Yu. L. // NuovoCimento, 2011, V. 034, Issue 04, p. 1. 8. Fiks E.I., Bogdanov O.V. and Pivovarov Yu.L. // Journal of Physics: Conference Series, 2012, p. 357. 9. .., .., ..// , 2012, .142 . 3(9), c. 442. 10. .., .. // . , 2012, . 55 - . 11/2 ­ C, c.130.


48 .. , C.. INFN Laboratori Nazionali di Frascati, Frascati (RM), Italy «» - , , - , . /1/. /2/, , /3/. CAPSYS C++, . , , . . , , . 1. M.A. Kumakhov, F.F. Komarov, Multiple reflection X-ray optics, Phys. Rep. 191 (1990) 289. 2. C.A. MacDonald, Focusing Polycapillary Optics and Their Applications, X-Ray Optics and Instrum. (2010) 867049. 3. .. , - , 173 (2003) 1083.


49 () . . , , ( ) . , . (5 ­ 70) , . , . , , ­, , , (. ­). , . . , , . , , ( ) . .


50 .. , .. , .. , .. , .. , .. , .. , . , , , /1/. - /2/. , [2] . , 30 -50 , . , . . 1. 2. Tomlinson W., P. Suortti, D. Chapman // Nucl. Instr. and Meth. in Phys. Res. A., 2005, Vol.543, P.288 .. . // , 2008, . 808, . 2(38), . 25


51 .. , .. , .. , .. , .. , .. , .. , . , /1.2/ - ~1 -5 ~10% , . , l

52 .. , .. , , /1/, . /2, 3/ , - , , ( ). , /4/. « - », 16.740.11.0147 02.09.2010 2.2694.2011 18.01.2012. 1. 2. 3. 4. - .. . ­ : - , 1969. ­ 457 . N.F. Shul'ga, V.V. Syshchenko, A.I. Tarnovsky // NIM B, 2008, v. 266, p. 3863. N.F. Shul'ga, V.V. Syshchenko, A.I. Tarnovsky // J. Phys.: Conf. Ser., 2012, v. 357, 012026. H. Backe et al. // Nuovo Comento C, 2011, v. 134 (4), p. 157.


53 .. 1) , .. 1) , .. 1), .. 2) 1) . .. , , 2) , , , , : , [1, 2]. () () - - (). 60 % 1. . 1. , % . , % . Si O H C 6 0 ,0 2 4 ,0 1 7 ,6 6 ,7 5 1 ,6 1. 2. .. . ­ : , 2007. ­ 209 . , 8- , .2: . . .. . .: , 2007. ­ 1144 .


54 .. , .. , .. (). /1/ . 2 -4 , . /2/ , , . , 15 . . , , . . , - . , . 1. 2. K. Yamada, T. Hosokawa, H. Takenaka //Phys. Rev. A,1999, 59, 3673. N. Nasonov, V.V. Kaplin, S.R. Uglov et al. //Nucl. Instr . and Meth. , 2005, 227, 41.


55 .. , .. , .. , .. /1/ , , (. .1.) .2 - ( o=532eV), ( =17o) , .3 - ( =3680eV), , ( =2.6o) .

.1.

.2 -

.3 .4 - , .3. 1. . . , .. , .. ,// , 2012, . 142. .1.


56 .. , , .. , «», , . , ( - ), . . . , . , () . , .


57 .
1)

. 1),2), .. 1),3) , , 2) , , 3) . , ,

/1,2/. /3/ « ». ­ . . /4,5/ Si . 1. 2. 3. 4. 5. .. . // Atomic collisions in crystals. , 1980. Y.-H. Ohtsuki. // Charged beam interaction with solids. New York, 1983. H. Backe et al. // Nucl. Instr. Meth. in Phys. Res. B 266 (2008) 3835-3851 H. Backe, et al., IL Nuovo Cimento 34 C (2011) 157 -165. .. // ­ : . . . ­. . ­ ., 2004. ­ 223 .


58 Si W .. 1) 2), .. 1) 3), .. , . , 2) , . , 3) , ,
1)

1)

/1-2/ Si. /3/. /3/ () ( ) Si W. , (~1/) (~1/), - ( ). 155-200 , POSSO (INFN-LNF) SPARC /4/. 1. 2. 3. 4. Bogdanov O.V., Korotchenko K.B., Pivovarov Yu.L. // J. Phys. B: At. Mol. Opt. Phys., 2008, 41, 055004. Bogdanov O.V., Pivovarov Y.L., Takabayashi Y.,Tukhfatullin T.A. // Journal of Physics: Conference Series, 2012, Vol. 357, . 1, p. 1-8. Bogdanov O.V., Fiks E.I., Korotchenko K.B. et al. // Journal of Physics: Conference Series, 2010, Vol. 236, 1. http://www.lnf.infn.it


59 e-/e+ C/Si/Ge .. , .. , .. , , /1-2/ Si. , Doyle-Turner BCM-1.0 /3/. C/Si/Ge, . , /4/. , , , «» . , , «» /1-2/ . 1. 2. 3. 4. Bogdanov O.V., Korotchenko K.B., Pivovarov Yu.L., Tukhfatullin T.A. // Nucl. Instr. And Meth. In Phys. Res. B, 2008, V266, 3858. Bogdanov O.V., Evdokimov A.A., Korotchenko K.B., Tukhfatullin T.A. // J. Phys.: Conf. Ser., 2010, V236, 012016. Bogdanov O. V., Fiks E. I., Korotchenko K. B., Pivovarov Yu. L. and Tukhfatullin T. A.// J. Phys.: Conf. Ser., 2010, V236, 012029. .., .. // , .1, , .: , 1988, 216 .


60


61

III ,


62


63 .. 1), .. 1), .. 1), .. 2), .. 3), .. 1), .. 1), .. 1) 1) , .-, 2) - . .. , .-, 3) , , .-, - 200-3500 (40 ) - - . . , [sp2] / [sp3]. sp2 , , . ( ) ( ). , sp2 sp3 . P+ PF4+ . , sp3 sp2. : ( ), . 12-08-01197 1302-92709.


64 AXF-5Q .. 1), .. 1), .. 2), .. 1), .. 3) 1) - . .., . , 2) «», . , 3) . .. , . , - , (dpa ­ displacements per atom) /1/. . , , , , . /2/. -AXF-5Q. Ar+ 8 - 30 c 1019 /2. , , . , . . /1/. 1 2 T.D. Burchell, W.P. Eatherly. J. Nucl.Mat.//1991, V.179, P. 205. .. , .. , .. , .. // . . 2012, .76, 5, C. 586.


65 , H
+

.. . .. , , , , . , , . , , , . --, . , , . , ~1000 . 5 , ~70 %. , (~50 .%) .


66 .. , .. , .. , .. - SRIM /1/. () . -20. , . . : , , /2/. 1. 2. "The Stopping and Range of Ions in Matter" J.F.Ziegler, M.D. Ziegler, J.P. Biersack. SRIM (ver. 2011.08) - http//www.srim.org Gerasimenko N.N., Kozlovski V.V., A.N.Mikhailov, // 25 th Int.Conf. "Defects in Semiconductors", St.Petersburg, 2009. Book of Abstracts. Ioffe Institute. P.250 -251.


67 .. , .. , .. . .. , .-, Fe3Si . ( 800 ) , . in situ (5â10-10 Torr). . Fe3Si 0.3 nm Fe Si(100)21, 50°. , , 1.2 nm. , 0.75 nm Fe. 100°. Fe3Si . HZB BESSY.


68 .. , . .. , , , . , /1,2/. , , , . , , , . . . , , . 1. 2. Kristya V.I. // Glow Discharges and Tokamaks. - New York: Nova Science Publishers, 2011, P. 329. .., // XLII // .: , 2012. .91.


69 NANOMETER THIN STRAINED SGOI LAYERS STUDIED BY MEIS SHADOWING AND BLOCKING EFFECTS V.P. Popov1), I.E. Tyschenko1), T.S. àvila2), and P.L. Grande 1) Institute of Semiconductor Physics, Novosibirsk, Russia 2) Institute of Physics, UFRGS, Porto Alegre, Brazil
2)

The formation of heterostructures -on-insulator is a way to increase the frequency of silico n CMOS chips. In this work, we investigated the structural and electrical properties of the ultra -thin silicongermanium-on-insulator (SGOI) layers produced by segregation of Ge atoms from the buried SiO2 layer to the bonding interface during annealing and anodic oxidation. In order to form the SiGe layer we used the previously reported method to grow the intermediate Ge layers at the bonding Si/SiO 2 interface based on the segregation of Ge atoms from ion implanted SiO2 layer during high-temperature annealing. The thermally-grown SiO2 films of the 220 nm thickness were implanted with Ge + ions at an energy of 40 keV to dose of ~(5-8)â1015 cm-2 and 500 nm-thick silicon layer was transferred by hydrogen exfoliation to the Ge +-ion implanted substrate. The produced SOI structures were annealed at the temperature of 1000 or 1100oC and the top SOI layer was thinned by step -by-step anodic oxidation and chemical etching to the few nm thickness. The distribution and position of Ge atoms inside the nanomete r-scale SGOI structures was studied by Medium Energy Ion Scattering (MEIS) technique that may observe both the shadowing and blocking effect along the columns of the lattice atoms. It was obtained that Ge atoms occupy the regular lattice positions in the 2 -4 nm thick SGOI films. The Ge atom concentration in this case was about 5-10 at.%. The regular position of the Ge atoms results to the tetragonal lattice distortion of the SGOI layer. The SGOI lattice is extended perpendi cularly to the layer surface. This expansion is about 2-4%. The nature of the observed lattice distortion is discussed. An increase in the hole mobility in the nanometer-scale SGOI films was by the factor of 3 -5 as compared with that in the respective SOI layers due to the relax ation of hole subbands. This work was supported partially by RFBR grant no.12 -0209443 Ukr-a.


70 ,
1)

.. 1), .. 2), .. 2) - .. .. 2) ..

. - , .


71 .. 1), .. 1), .. 1), .. 1), .. 2), .. 2), .. 2) 1) «», , 2) . , , , . ( () [1,2]) . , . . . 1. 2. Vos M., Chatzidimitriou-Dreismann C.A., Mayers J. // NIM in Phys. Res. B, 2005, V. . . , . . , . . . , . . , . 1, . 76. Abdul-Redah T. and 227, P. 233. , . , // 2011,


72 F .. , .. , .. , .. , .. . - , , , () . , - . ( . - , - . . . , [1]. (, ) . , . , 12-15% . 10-12% . . 2-5%, . -, F- , « » . 1. . . . ., . . , ,1984.


73 - .. , .. , .. , .. ( ), ., . , , (-), EXEL-2010. 110 ( 350 , 17 ). - , (.1) 3­10 , Me-O, MeOH, 2 .
, ..



­ - , ­ , 0,20â0,04 ­ 5,12â0,26 .1. - « ­ » 110



- (, 2, ZrO) .


74 - - .. 1), .. 2), .. 1), .. 1), .. 2), .. 2) 1) - .. .. , , 2) «», ., - () /1/. /2/, , /3/. - «» - () , 30 . 20 400 . , - , , . 1 2 3 . .// . . . , , « . », 2000, . 217. Andrianova N.N., Borisov A.M., Mashkova E.S., Parilis E.S., Virgiliev Yu.S. // Horizons in World Physics, Nova Science Publishers, NY, USA, 2013, V. 280, P. 171-190 Burchell T.D., Eatherly W.P. // J. Nucl.Mat. 1991. V.179. P. 205.


75 GaN .. , .. , A.. , .. , .. , .. - , -, F,+ +, PF2+ PF4+ 1.3 / 60 DPA . - . , , 3 . , ( ), . , , GaN F,+ PF4+ , . , PF4+ , , ( ). , , . , , 20 . . 13-08-00666.


76 -
1)

.. 1), .. 1), C.. 2) , , 2) , , .,

C60 . : AIREBO /1/ , /2/ , - -. , 25 , 50 , 100 200 . . , . 1. Stuart S.J., Tutein A.B. and Harrisson J.A. // Journal of Chemical Physics. 2000. V. 112. P. 6472. 2. G. Ackland, V. Vitek // Physical Review , 1990, V. 41, 15, P. 10324.


77 , (001) Au, .. , .. . .. , , , (001) Au, . , . > 32,4. : , . . - , . , (. /1/). . , 0,6o 3,0o . , , . 1 .., .. // , 2009, 3, . 73-79.


78 , (001) Ni (001) Au .. , .. . .. , , , (001) Ni (001) Au, . , , (001) Au, , (001) Ni (~8,63 ~3,99 ). Au. , (001) Au (001) Ni. (001) Au , , , , Au (. /1/). (001) Ni (001) Ni (46,6%). (13,2%). (001) Au 90,6% , ­ 86,9% . 2 .., - .., .. // , 2011, 4, . 34-46.


79 Si, P
1) +

.. 1) , .. 2) . .. , . , 2) - - , . , Si . Si ~ 100 - . + 40 1015 - 1016 -2. -200. Si - . + Si . 680 0 ~ 21 . 8000 ~ 42 . Si, 5.1015 -2, 6800 . Si, > 5.1015 -2 6800, . Si 8000 . 800 0 . . , + , .


80 .. , .. , .. , .. «», , () . . . , . (., [1]) , . , , . , . . 1 A. Jablonski, //, J. Phys. D: Appl. Phys., 2012, 45, 315302 (14pp)


81 -- .. . .. , , -- () " " . SiO2, , , . F+, N+, Si+ Ge+. - SiO2. - . , Si+ Ge+ 1016 -2 . 106 - . SiO2 F+ N+ . F+ , . N+, F+ . SiO2.


82 Fe/Co/Si Co/Fe/Si .. , .. , .. . . .. , .-, , Fe Co Si(100)21, . in situ (5â10-10 To). . 135 , Si 2p . , . , , Fe/Co/Si , Co-Si, , Fe3Si , . . , Co/Fe/Si FeSi 130° ( Fe/Si), Fe/Co/Si 240°. , 260°, Co/Si. - HZB BESSY.


83 P PF4 .. , .. , .. , .. - , -, () (001) Si P+, PF4+ E = 0.6; 1.3; 3.2 /... , /1/. . . , h , , , (V = dh/d, ­ , DPA) Si . , , , , . , V /2/. , ­ PF4+ P+, PF4+ h 10 P+, . , 5. 13-08-00666. 1 2 .. , .. , .. // , 2013, 47, 2, 206. A.I. Titov, V,S. Belyakov, A.Yu.Azarov // Nucl. Instr. and Meth. B, 2003 212, 169.


84 .. « », , FeTiO3: (c Fe2O3) , . (TiO+/Ti+, TiO2+/Ti+ (FeO+/Fe+, FeO2+/Fe+) . , . . , . UTi2O6 : . .


85 - .. . .. , , ( ) (1-5 ) [1,2]. , , . , . - . (, ) (1 -5 ) [3,4]. , , , .. ( ). , , . - . 1 2 3 4 Kim K.S., Spectrosc. Alov N.V. P.337. Kim K.S., P.285. .. Baitinger W.E., Amy T.W., Winograd N. // J. Ele ctron 1974. V. 5. P. 351. // Nucl. Instrum. Methods Phys. Res. B. 2007. V.256. Baitinger W.E., Winograd N. // Surf. Sci. 1976. V.55. // . 2013. 4. . 88.


86 .. , .. , .. , .. - , , . KOH KOH , Ba(NO2)2 2H2O, KOH Ba(NO2)2 8H2O Ba(NO2)2 2H2O , Ba(NO2)2 8H2O Ba(NO2)2 2H2O BaO ( 2000 0) ( 1,6 V) , . F - /1/, - je/ji - , . , F . /3/. ~3/2, ~. F- . 1 .. , .. , //. .. . : 1958.


87 - GaN .. , . , .. , .. - , , , NH, NO OH . , , Ga . . , - . .

GaN


88 .. , . , .. , .. - , , . , -, , , post . LiF(100) Cs+ Ar+ [1]. LiF , , . , Li2+, , . , Li2F2+ (LiF)(F)Li+; (LiF) - , Li+ - , . , , . - , . 1. .. // , 2003, 9, .76.


89 .. , .. , .. , .. - , , (, ) , () , [1]. .[2]. . , "" . , , , . . , . , () . , . , , , "" . 1 .. . . , 1968.


90 : « » .. 1), .. 1,2), .. 1), .. 1) - , , 2) Helsinki Institute of Physics and Department of Physics, University of Helsinki, Helsinki, Finland

1)

, /1/, ( /2/) . ­ () , Ri, - Re, . /3/ Y ~ exp U kT , t . Ri Re, Ri=Re=0 , Te Ti 0 ( ). U=U1 ( ) U=U1ln(e*n) ­ , Y1 Yn ( Yn~n-), : dYi d 0 dYn d 0 . 1 2 3 Djurabekova F.G et al. //Physica Status Solidi, 2013 (in press). Sigmund P. et al. //J.Appl.Phys., 1981, V.52, 2, P.990. .. . //. , 1959, 6, 4, .391.


91 ,
1)

.. 1), .. 1), .. 2) - , , 2) Alderson-Broaddus College, Philippi. WV 26416, USA

, , , , , , d . : (1 ) d R2 0kT * a 2 , ~1-2 , a5å , R100å - , 0=10-13 ­ ; kT*~1 / /1/ . d5*10-11 . , /1,2,/ 10-510-4 , .. , . (1/1) (1/2) (1/d) n(t). 1 2 Bekkerman A.D., Dzhemilev N.Kh. et al. //Mikrochim. Acta, 1998, V.15, P.371-377. Maksimov S.E., Kovalenko S.F., et al. //Bull. of the Russian Academy of Sciences, Physics, 2012, V.76, 5, P.527 ­530.








92 , .. , .. , .. , .. , .. - , , . , . - , Xe+ Nb V O2, NbnOm± VnOm± n m , . , VnOm VO, VO2, VO3 V2O5, ; NbnOm NbO, NbO2, NbO3, Nb2O5 . , MenOm± (Me = Nb, V) /1/ , , . Me, O, MeO MeO2 . ( ) /1/. 1 .. // , 2012, 8, .28-34.


93 .. , .. , .. - , , , , . SinOm-, /1/ Xe + Si O2 . , O-, Si- SiO- «» , SinO-2n+1 , . /1/, , . SinOm- O, Si, SiO SiO2 Si- - ( ). , SinO-2n+1. 1 .. // , 2012, 8, .28 -34.


94


95

IV


96


97 , Ta|(CD2)n|Ta .. 1), . 2), .. 3), .. 3), .. 4) 1) , .. , , 2) Narodove Centrum Badan Jadrowych, Otwock-wierk, Poland 3) - .. .., , 4) .. , , Ta- (100 ) ( CD2)n- (150 ), 30- ( 10 ) « » (-4, ) [1, 2] .. -4 N+- [1, 2]. CD2)n. ERD , (CD2)n- Ta-, . . . , . 1. 2. .. , .. , . . . , . 2013, 1, . 22­26. A.Yu. Didyk, L.I. Ivanov, O.N. Krokhin et al. Doklady Physics, 2012, V. 57, No. 1, pp.7­9.


98 .. 1, . 2, .. 3 , .. , , 2 Narodove Centrum Badan Jadrowych, Otwock-wierk, Poland 3 - . . .. , ,
1

Pd-, 50 µ m . Zr- Pd- 25 2.3â1022 -2. Zr Pd- -5. , , Zr Pd . , . Zr Pd , , . , , . , . 1 2 3 A.Yu. Didyk, , 2012, A.Yu. Didyk, , 2012, A.Yu. Didyk, , 2012, R. Winiewski, T. Wilczynska et al. 1(171), .133-146. R. Winiewski, T. Wilczynska et al. 1(171), .125-132. V.S.Kulikauskas, R. Winiewski et al.. 1(171), .147-159.


99 .. 1,2), .. 3), .. 2), .. 1,2), .. 1) - (C), -, 2) SCK-CEN, , 3) , ,

1)

, , /1/. , , , . , , . , ITER. , , , , (, Ta). W W-Ta. 1. Henriksson K.O., Nordlund K., Krasheninnikov A., Keinonen J. // Applied Physics Letters, 2005, 87, 163113


100 .. 1), .. 1), .. 1), .. 1), .. 2), .. 2), .. 3) 1) , , , 2) « ­ .. », « .. »

3)

, () [1]. 10 - 3 , 2 . 5 / 9 /. , () Quanta 600 TRIDENT XM 4, Horiba Jobin Yvon T64000 PHI Quantera. () [2] . . 20 . . , 14.513.11.0034. 1 .., .., .., .., .., .. - . . ... 2 - . .2. .: , 2011. 512. .., .., .., .., .. // . 2009. .72. . 1721 -1729.

2


101 .. 1), .. 1), .. 1), .. 1), .. 2), .. 3) 1) , , 2) « ­ .. » « .. »

3

. (). (- , ), - [1]. () 7.5 [2]. ­ - . 20 27 , 14 25,7 , 30 20%. 5%. , 14.513.11.0034. 1 2 . 2462536 (). / .. , .. , .. . 2012. .., .., .., .., .., .. // . 2011. 1. .45-50.


102
1)

.. 1), .. 2), .. 2) - .. .. 2) ..

, . p0 . pcr. , pcr. , p0 . .


103 CZTS PIXE -PIXE .. 1) , .. 1) , .. 2), .. 2) H. Cheong3) , , 2) , , 3) Sogang University, Seoul, Korea

1)

Cu2ZnSnSe4 (CZTS) CIS, CIGS CdTe . CZTS, Cu, Zn, Sn, Se , «» (, , ) 1,5 . (PIXE). 9x6 2 (-PIXE), 200 x200 2 ( ­ 4 ; ­ 50 , ­ 0,5 ). . . PIXE GUPIXWIN. , .


104 - «» 12 .. 1), .. 1),.. 1) , .. 1),.. 1), .. 1) , .. 2), .. 2), .. 3), .. 3) 1) , , 2) . .. , , 3) , , «» () () () 1998 . 2011 . «» , . - , . , , . , . , . Si . ­ Si Zn . .


105 - .. 1), .. 1) 1) , , , (). , .. . /, , . / He+ , E=25 RUMP. (100) He+. (Ti Co) (6065% Ti 85-90% Co ). Si . ~ 430 ~ 780 20-30 % 15-20 % . , Xe+ = 10 20 () 1â1014 -2 2.7â1015 -2 , . Si .


106 (Ti, W),
1)

.. 1), .. 2), .. 2) , , 2) , ,

( = Ti, W) (Ti+, W+) (111) Si 5 15 , . 0,16 0,45 /. -100 -100. , NT-206. , Ti . (TiSi TiSi2) 50 100 (111) Si. TiC TiO2 10 30 . , . W (W3Si, W5Si3, Wsi2) WO2, 5 10 . , . , , . Me/Si . .


107 PbSnS, .. 1, .. 1, .. 1 . . , , 2 , ,
2

P b S n S « » T s 2 6 8 ° C 3 8 2 ° C . , ( ) =1.4 2.0 . R U M P . , P b S n S 0 , 8 3 1 , 6 8 , . 7 , 6 - 1 0 , 4 . % , 37,3-43,4 . % 48 -53 . % . S i 0 . 4 O 0 . 6 . , , 0,5 , , (Si, O) . 0,48 1,65 . PbSnS, 382°C «» . « »: .


108 , .. , . . , . . , .. , . , , , , , , , /1/. . 1-0, . , : 80 , 200 120 /2. ~ 1,5 /2, ­ 1 4. , , , . , (~ 2,5 ) . 1-0 . , . 1 Xu J.J., Cheung H.Y., Shi S.Q. // Journal of Alloys and Co mpounds, 2007, 436, 82 ­ 85


109 .. , .. , .. , .. . .. , . , - . - , () . ( , ) . , , . ( 2 ) , , . , , , . . , , -, .


110 .. 1,2), .. 1), .. 2), .. 3), .. 2) 1) . .. , . , 2) , . , , . ,

3)

- () . , . , , , , . . (JSM-6610LV, "JEOL" Inca-350). - D8 Advance Bruker AXS. , 50 /2 SnO2 SnO (101). , . SnO2, , SnO, . .


111 .. , .. , .. . .. , . , (), ( 59 -1, 10-10), Zn Pb ( ) /1/. 23, 10-10 9-4 . 23 Pb (19,24%), ­ Sb Zn . «» - 300 , 60 , 30 -150 /2 1 5. . ( Sb Zn) . . 1 .., .., .. , 2013, 4, . 23.


112 .. 1) , .. 1), .. 1), .. 2), .. 2) 1) , --, 2) «», --, , , . . , , , . - , , , . , , . 1 .., .., .., .. 3, 2010 r., , . 140-142.


113 .. , , () , /1, 2/. , () (). . . ( ) /1, 2/. , - /2/. . () . . 1. 2. .. . . ­ : , 2007. ­ 394 . Throkhimchuuck P.P. Nonlinear and Relaxed Optical Pr ocesses. Problems of interactions. ­ Lutsk: Vezha­Print, 2013. ­ 280 p.


114 , .. 1), .. 2), .. 2), .. 1) , , 2) , ,
2)

() , (3 ­ 30 /2) (~ 100 ). p- (111), . 312 /2. , , , /1/. 5 -20 . , , , . , - 300 400 . - , /2/. 1 2 .., .., .. ., //, , 2001, . 74, . 4, . 234-236 Uglov V.V., Kudaktsin R.S., Petukhou Yu.A. etc., //, Applied Surface Science, 2012, 258, p. 7377 ­ 7383


115 .. 1), .. 1), .. 2), .. 2), ..2), .. 3), .. 3) 1) , . , 2) , . , 3) , . , ( , , ) , , . . , ( 3 ) . 0,3-0,4 , . :


116 «-» .. 1), .. 2), .. 2), .. 3), .. 1), .. 2) 1) , , 2) , , 3) , , , ( 40 /2) ( 200 ). , , , . «(Cr,Ti,Zr,Fe)-», 50-200 ­ 8-12 /2. , (CrSi2, TiSi2 ( C54), ZrSi2). , , , . , , , , , .


117 , .. 1), .. 1), .. 1), .. 2)
1) 2)

, . , . .. , . ,

() , () /1/. (100 ) , , , . , , , . , . - , . , , . 1. .. . // . ­ 2012. ­ 4. ­ . 35-42.


118 Cu/Al ,
1) 2)

.. 1), .. 2) , , , ,

, Al (99,995 %) . Ar+ 6 . (0,7-1,6)1016 /2. 9 20 /2, I/A ( I A ) ­ 0,06 0,13. ~(0,2-2)10-6 . c . Al , Cu O Ar Cu (30-47 .%), (0,8-1,1 .%) Ar (0,5-1,2 .%) , Al (.). . u/Al Cu/Al 60 . u/Al Al Cu , Cu , .
100
0 20 40 60 80 100 120 140 160

, .%

80

60

40

20

0

0

20

40

60

80

100

120

140

160


119 , .. -1), .. 2), .. 3), .. 2), .. 2), .. 3), .. 4), .. 5) 1) , , , 2) . .. , , , 3) , , , 4) , , , 5) , , . , , -- . Al-Cr Al-In, - , . , , , . , . , .


120 , - .. , .. , , , - (IBAD) (Ce, Er, Dy, Ho, Gd) , (U = 20 ) . , - ( JEOL JSM-5610LV LEO1455VP; = 20 ), 4 ( AN-2500, High Voltage; 0 = 1,0 ; = 170º) ( HKL EBSD Premium System Channel 5 LEO1455VP; = 20 ; = 70º). , , , . , , , . . , , .


121 .. , .. , .. , .. « ..». 620002, . , . 21, - , , . (343) 375 -4711, 121-mail: rov@dpt.ustu.ru. ( / ) 1012-1013 /2. ­ / /1/. () , , , . SIMNRA. 160 () Ag 140 6,6 120 ( 160) 100 () 80 /2/. 60 6,6 40 5000 6000 7000 160 B, Cd, , Co, Cr, Fe, Mo, Ni, Sn, Ti, V, Zr. 1. 2. .., .., .., .. // , 1997, 3, .4-12. Nurmela A., V. Zazubovich, J. Raisanen, E. Rauhala, and R. Lappalainen. //J. Appl. Phys. 1998. V.84. P.1796.

, /


122 - .. 1), .. 2), .. 1), .. 1), .. 1) 1) . .., , , , ,

2)

-, - . - SiO2 100 /1/. ( Co60). - . , . , - . , ( 12 -0297533). 1. B.., .., .., .., .., .., .., .. // , 2001, 3. .5-11.


123 - .. , .. ( ), ., 110 9,15 400 . -03, Ar+ . ( ), ( <150 0) . = 350 0 P = 17 . , , . , , 30-40 % (. 1) - .





­ ( 2,4 ); ­ ( 3,5 ) .1.


124 .. . .. , , 26 (Gd3Ga5O12) (PbWO4) 300 . , r=X0 /X0 = const, 540 340 , . ~540 ~340 t ~ 1X0 t ~ 6X0, . ~ 1 ~ 3 ; ~ 10% ~ 3%. 1. 2. .., .. // , 1983, 85, . 94. .., .., .. // , "" , . , 1989.


125 .. , , - 200 - 1000 . , , - . , . . /1/ (, , , ) - . . : () -1,11, ()-0,94, ()0,59, ()-0,38 , 6 (/) () 0,93, (/) () -0,2, () -0,23. : 1,02-1,12, -0,91, -0,57, -0,36-0,41, -0,91, -0,21. - . 1. .., .., .. // , 2009, 3, . 49.


126 - .. , .. , .. , .. . .. , , - , () ( , , - ). , . : ( ) ; , , . , . , , , , , , , , . - , .


127 .. 1),.. 1), .. 2) 1) , , 2) , , -3 PDIFF Beamline ANKA Karlsruhe Institute of Technology /1/ . , 3-5 Es = (15 ­ 25) /2 50 ~ 10 - . . TiH1,5 ­ TiH2 . 1. .., .., .. . // . . . 2011 ­.54. -11/2. .195-199.


128 .. , .. , .. , ., , /1 ­3/. , /2, 3/. , , , / /2, 4/. 300­1200 . , ­ . . n p . 300 ­700 . 700­1000 . 1. 2. 3. 4. .. //, 2008, . 178, .459. .., . // , 2012, . 46, . 8. .1017. Maydell K. // Appl.Phys.Lett., 2007, V. 90 , P. 132117. Orwa J.O., //J.Appl.Phys., 2005,. V. 97 , P. 023519.


129 SI : .. , . , . . . , . - /1,2/. , . , . , . 1. 2. Adeishvili D.I., Antipenko A.P., Blazhevich S.V. et al. // Instrum. Experim. Techn. 1991. V. 34. < 2. Part1 .P. 294. .. , .. , .. . // . , , 2011, 7, . 46-51.


130 VALIDATION OF THE FEPE CALCULATION FOR A DETECTION SYSTEM COMPOSED OF TWO -DETECTORS USING SPHERICAL SOURCES Mohamed. S. Badawi, Mohamed. E. Krar, Ahmed. M. El -Khatib Physics Department, Faculty of Science, Alexandria University, 21511 Alexandria, Egypt This paper investigates the validity of extending the efficiency transfer technique (ET) to accommodate detection systems composed of more than one detector (Two NaI(Tl) detectors). To obtain the full energy peak efficiency (FEPE), the effective solid angles subtended by an arbitrary located point source as well as an arbitrary located volumetric spherical source derived. The detector active volume, the source matrix, the source container and the end -caps of the detectors were considered. Results were compared with those measured by a combination of two cylindrical NaI(Tl) detectors of different volumes (3" x 3" & 2" x 2") with resolution (FWHM) at 662 keV equal to 7.5% and 8.5% respectively. Measurements were made using 152Eu aqueous radioactive spherical sources covering the energy range from 121 keV up to 1408 keV. The comparison between the calculated and the measured full-energy peak efficiency values reveal good agreement.


131 .. 1), .. 1), .. 1), .. 2), .. 2) 1) , , 2) , , , . , , TiO2. Ti4+. , , , . , , ( 15%) TiO2. , , 18. [1] , . , 12--2-2041. 1 Bechstein R., Kristoffersen H.H., Vilhelmsen L.B., et. al., // Phys. Rev. Letters. 2012. V. 108. P. 236103.


132 -Mn-O ( = Nd, Sm, La ..) .. 1), .. 1), .. 2), .. 1) , . , 2) , . ,
2)

­ Mn ­ O . SmMnO3, NdMnO3 LaMnO3 . -2. () 15 . 400 -7500 18 0,3 . . 18O . , . . . . , 13-03-00309.


133 .. , .. , .. , .. « ..». /1/. - (). 2000 1500 2,95 . C 1000 O 3 500 5 2 1 0 0 25 50 75 100 125 150 . : 1 ­ , 2 ­ 51014 /2, 3 ­ 1,51015 /2. 1 3 %.

, .

1 .. . // , 2002, .71, 4, . 363-377.


134 .. , .. , .. , .. « ..». 50- . - /1/. . (C10H8O4) 2,95 . . H2 ­ 8%, CO ­ 42%, CO2 ­ 47%, CxHy ­ 2,5%. 3000 C , 2500 160°: 1 ­ 1O 2000 , 2 ­ 1500 51014 /2, 3 ­ 1000 2 11015 /2. 500 , 3 11015 0 0 25 50 75 100 125 150 /2 ( ) 1,4 , ­ 10,4 . . 1 .. - . . ., . 1986. 269.

, .


135 .. 1, .. 1, .. 2 1 , , 142432 2 , , Ba1-xSrxTiO3 (BSTO) . , , , , BSTO /1/. , , . + + Ba1-xSrxTiO3 MgO NdGaO3 (100). Ba0.8Sr0.2TiO3. 1 /. 150 , , . , , BSTO/MgO, . BSTO/NdGaO3 . 1 ., . . .: . 1981.


136 .. 1), .. 2), .. 3), .. 4), .. 5) 1) , . 2) - . .., . 3) ­ . 4) . .. . 5) , . . , ( 90). , ( ) . . , - , . S7 ( ) Ar,N,Ti,Sn,Pb ( 30 , 13.1017 -2), . . . 70 100 , 2-4 . . ( ­ ) , , , .


137 .. 1), .. 2), .. 1) , , 2) , ,
2)

() . 100 . , - 3D- Si Al2O3, . [1]. . (, , ) . - Si 120-230 HVEE-500 . (0,2 -1,5)â1015. ( ). , . . 1 .. , .. , .. .// . , 2012, . 38, . 19, .83 -89.


138 .. 1), .. 2), .. 1), .. 1), .. 1), .. 1), .. 1), .. 2), .. 2) 1) - .. .. , . , 2) «», ., - () /1/. 7.5 - , . , , , 100%. , . 3 30 .%. SiC 40%. ­ 60% . , . /2/. 1 2 ..// . . . , , « . », 2000, . 217. .., .., .., .., .., .., ..// . 2010. 6. .10.


139 (Cs ­ Ni, Na ­ Ni, N ­ Si, Ba ­ Si) .. , .. - , , ­ (Cs ­ Ni, Na­ Ni, N ­ Si, Ba ­ Si) . .1 Cs Ni . , . , .

.1 Cs Ni : a ­ , b ­ =1015 /2, c ­ =1016 /2.

.2 Si (=1).

. : .

.2 Si (=1).


140 Si .. , . , .. , .. - , , . Si(111) - . - 0,2%. Si + Ar+. , Si 77. Si 1 , Si (LVV=92 ) 00, 150 260. Ar+ 0=1 , . ( D1014 -2) . , . , . () D1016 -2. Si. .


141 u Ag .. , .. , .. , .. - , , , u Ag . . - 0,2%. Na+, K+ Ar+. Na+ u(100) 450å , Na+ 1 . , . 1015-2 , (I) (II) . III- . D1016 -2 I II , . , , .


142 Ga1-xNaxAs/GaAs .. , .. , .. , , /1/ Ga1-xNaxAs ( = 0,2 ­ 0,6) Na+ GaAs ( + ). . , Ga0,4Na0,6As Eg = 1,9 . Ga0,4Na0,6As/ GaAs (111) . Ee = 0,5 ­ 5 , je = 10 ­ 150 /2. je 3 ­ 4 . Ee = 0,5 je = 25 ­ 30 /2, Ee = 5 ­ je = 15 ­ 20 /2. As 5 ­ 10 .% ( 45 ­ 50 .%). je As. je = 40 ­ 50 /2 As Ga Na. je = 70 ­ 80 /2 Ga0,4Na0,6As GaAs Ga. . 1. .., .., .. // . . 2003. . 67. 9. . 1362.


143 CoSi2/Si, .. , .. , .. , .. , , CoSi2/Si (111), . . CoSi2/Si (1 1 1 ) = 600 . 300 ­ 400 å ­ Si. CoSi2/Si = 300 å = 650 30 . Si Si 5 ­ 10 å. ­ . 700 Si . = 750 CoSi2 . Co+ Si (111) (0 = 0,5 ­ 10 ) (D 41016 -2). = 500 ­ 600 . CoSi2 = 30 ­ 100 å. ­ CoSi2 50 å Si 750 ­ 800 . = 850 ­ 900 CoSi2 Co . , , , CoSi2 .


144 - .. , .. , .. , .. - , (, ) , , . 2 -15 . , 6 . 45 1,82 /. 120 220. , . - , , 1.51,7 , 10 . . , 11 . , - , (Mn,Cr,N) (P,S.Cl .). .


145 - .. , .. , .. . .. - , , , . , , . . , (L) . EDX , - . .


146 .. , .. , .. , , , , , , . , , , - (), - (), (), (), (). Si SiO2 , , , Cl, K, Ca, Mn. , , , , . - p n ( , , ). . O Si n- .


147 Si(111)
1) 2)

.. 1), .. 2) «PROTON», , , ,

, . . () Si(111) ( 1300 ) . , 50 1300: 1. Si(111) d3 1015 -2. 2. Ei300 , . 3. Si(111) Ei~100-1300 , -, .


148 .. 1), .. 2), .. 3), .. 2), .. 3), .. 1), .. 2), .. 1) 1) ... , , , 2) « », , 3) , , [1]. , (V-0,59Ga, V-1,86Ga , V-4,51Ga-5,66Cr, V-3,4Ga-0,62Si, V-4,81Ti-4,82Cr), - Ar+ 20 40, 5·1021-2 1,01022 -2, . 7000. . , , , . , . 1 .., .., .. // , 2008, 5, . 8 ­ 14.


149 - IN-SITU .. 1) , .. 1) , .. .. 1) , .. 2) 1) , , 2) , ,
1)

, : , , , , .. :-, , sp3- sp2-. . , . ERD- in-situ , . , . , sp3 sp2 .


150 , .. 1), .. 1), .. 1), ..2, ..2, ..3) . .. . .. , , 2) , , , 3) , Mo,

1)

() -/. ZnO Si, Zn . Cz-n-Si(100) c D=2â1016c-2 64Zn+ E=100, O E=35. 60 2 t=400C, 600C, 800 1000C. Si He + 1.5M . Zn -. . - . 140. 600 800oC ZnO . t=1000oC . .


151 .. 1), .. 1), .. 2), .. 1), .. 2), .. 1), .. 1), .. 1), .. 1) 1) « », , 2) , , W - () , , H, . W 42+ (3,2-4,0 ) 123+ (10 ), 3,5 -6 , (10251026 /2) [1]. 200 . , He, W ~ 8 .%. He . . W 50-100 , 6-8 %. . 1 B.I. Khripunov, A.N. Brukhanov, V.M. Gureev et al. // Journal of Nuclear Materials. 2011. V. 415. S649 -S652.


152 . 1), ..2), ..2), ..1) 1) , . - 2) , , -, Ag , Ag, . - (soda lime) SiO2-Na2O-MgO-Al2O3CaO. Ag Ag+ Na+ AgNO3 (5 . %) + NaNO3 (95 . %) 350 15 . 15 , . JEBD-2. Al, OH. 5-15 20-50 /2. , Ag , . Ag. , 5-15 - , , , 152152 .


153 .. , () . , 1946 ­ 1948 . [1] 1953 [2] , - "" . "" ( "" ) , =Z¹Z²e²/( v)1 (Z¹e Z²e ­ , v - ). , >>1 [3] . 60- . .[4] , "" , ( "" ). "" "" . ( ). , "" , "" "" . 1. 2. 3. 4 G.Moliere // Z.Naturforsch., 1947,2a,133;1948,3a,78 H.Bethe // Phys.Rev., 1953, 89,1256 W.G.Simon // Phys.Rev.,1964,136B,410 Z. Lindhard, V. Nilsen, M. Sharff // Kgl.Dan.Vid.Selsk., Mat-fys. Medd., 1968, #10


154 nSi .. , .. , , n p-Si /1/. nSi, . ( mCznSi). (380 , =1,32 , 4,6·1017 3, Okmetic Oyi) 7,5 7,5 2, (50300 , 3101431015 2). 500 800. 4 , , D. 600800 D(103/T). , T. 600 (mCzSi), «» pSi. D(103/T) «» Si , . , . , . 1. .., .. , .. , .. // ­ . 2011. 4. . 59­62.


155 . .. .. .. .. .. .. .. .. A.. .. .. .. .. .. .. . . .. .. .. .. .. .. .. .. .. .. .. .. .. .. .. .. .. .. . . .. .. 4 0 ,5 8 140 112 21, 22 85 122 64, 84 72, 86 75 117 87, 88 71, 80 135 122 72, 86 19 10, 99 137 34 124 153 74, 13 131 15 63, 75 108 108 54, 55 14 47, 57 14 122 64, 74 148 78 126 73, 12

, 23

, 89, 144, 145

, 89, 144, 145

8

, 58 , 100, 101, 138

3


156 .. .. .. .. .. .. . .. .. .. .. .. .. .. .. .. .. . 28, 29 43 126 100 63 64 3, 97, 98 50, 51 91 73, 123 126 43 100, 101, 138 12 39 4, 9, 28, 29, 41 4 131, 132 127 112 126 87 54 136 67, 82 55 67, 82 99 49 115 19, 44, 48, 57 148, 151 43 87, 88 92, 93 90 84 3, 97, 98 109 146 1120

.. .. .. .. .. .. .. .. .. .. .. .. . . .. .. . .. .. .. .. .. . . ..


157 .. .. .. .. .. .. .. .. .. .. .. .. .. .. .. . .. .. .. .. .. .. .. .. 66 99 135 135 53 136 47 70, 102 71 76 9, 41 12, 56 10, 99 66 154 97, 148, 151 59 119, 121, 133, 134 71, 80 116 70, 102 27 140, 141 11 68 128 19 35 140 72, 86, 89, 144, 145 116 73 39 80 63, 75, 83 63 63, 75, 83

.. .-. .. . .. .. .. .. .. .. .. ..


158 .. .. .. .. .. .. .. .. .. .. .. .. .. .. .. .. .. .. .. .., .. .. .. .. .. .. .. . . . .. .. .. .. .. .. .. .. .. .. .. 114 31 43 110 5 92 116 103 109, 110, 111 66 55 128 29 76 154 20 40 148 71 18 110 68 127 12 114 115 97, 98, 104, 107, 119, 148, 149, 151 88 131, 132 50, 51 8 110 12, 56 136 136 44 115 71, 80 112 23 148


159 .. .. .. .. .. .. .. .. .. .. .. .. .. 17 103 90, 91, 92, 93 9, 30, 41 148 43, 129 64, 74, 138 142 23 109, 111 22 105, 106 18 72 12 12, 56 43 11 71 119, 121, 133, 134 63, 75, 83 146, 147 7 104 53, 54, 55 131 43 90, 91 73 103 53 18 109, 110, 111 148 136 151 138 104, 150 112 146

.. .. .. .. .. .. . . .. .. .. .. .. .. .. .. .. .. .. .. .. .. .. .. .. .. .. ..


160 .. .. .. .. .. .. .. . .. . . .. .. .. .. .. 104 114, 116 40, 45, 49, 58, 59 8, 65, 79 12 5 0 ,5 1 63, 152 13 100, 101 103 120 43 8, 12, 16 67, 82 108 115, 128 122 100, 101 139, 141 27 147 115 66 119, 121, 133, 134 50, 51 25 100, 101 104 131 77, 78 26 20 104 12, 117 97 50, 51 45 104 122 24 13

.. .. .. .. .. .. .. .. .. ..

.. .. .. .. .. .. .. .. .. .. .. . . .. .. .. ..


161 .. .. .. .. .. .. .. .. - .. .. .. .. .. .. .. .. . .. . .. .. .. .. .. .. .. . .. .. .. .. .. .. .. . . .. .. .. .. 39 50, 51 5 29 11, 52 52 143 105, 1 119 142 7, 15 10, 99 116 8 127 63, 75 100, 1 29 34 6 113 42 118 90 107 92 59 65, 82 5 71 114, 1 39 139, 1 132 47 21 132 42 92, 93

06, 107, 118

, 83 01, 138

15, 116, 117 41, 143, 146


162 .. .. .. .. .. .. .. .. .. .. .. .. .. .. .. .. .. .. .. .. .. .. .. .. .. .. .. Anania M.P. Asomoza Rene àvila T.S. 143 72, 86, 89 115 16 117 53 74, 138 74, 138 104, 125 5, 20, 108 119, 149 70, 102, 1 35, 149 35 88 50, 51 104, 137, 79 119 117 18 43 6, 11, 31, 104 87 119 43 A 44 32 69 B 130 C 103 F 44 G 69 , 144, 145

37

149, 150

42

Badawi Mohamed S.
Cheong H. . Ferrario Grande P.L.


163

el-Khatib Ahmed M.
Kovalev G.V. Kudriavtsev Yuriy

Krar Mohamed E.
Pivovarov Yu.L Popov V.P. Takabayashi Y., Tukhfatullin T.A. Tyschenko I.E. Vassilenko V.B.

K 130 33 32 130 P 46 69 T 46 46 69 V 21


164 LIII ... : .. , .., .., .. ., .. , .. ..