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	Èíòåëëåêòóàëüíàÿ Ñèñòåìà Òåìàòè÷åñêîãî Èññëåäîâàíèÿ ÍÀó÷íî-òåõíè÷åñêîé èíôîðìàöèè
	Ãëàâíàÿ Ïîèñê Ñòàòèñòèêà Î ïðîåêòå Ïîìîùü

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Semiconductorsæóðíàë

Ñòàòüè, îïóáëèêîâàííûå â æóðíàëå ñòèëü:  îáû÷íûé | ÃÎÑÒ | plain | abbrv | acm | alpha | amsalpha | amsplain | apalike | ieeetr | siam

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  • 2016 Light-emitting nanocomposites on the basis of ZnS: Cu deposited into porous anodic Al2O3 matrices
  • Valeev R.G., Petukhov D.I., Chukavin A.I., Beltiukov A.N.
  • â æóðíàëå Semiconductors, èçäàòåëüñòâî Izdatel'stva Nauka (Russian Federation), òîì 50, ? 2, ñ. 266-270 DOI
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  • 2015 Characterization of the spatial inhomogeneity of heterointerfaces in GaAs/AlGaAs quantum wells by photoreflectance spectroscopy
  • Avakyants L.P., Bokov P.Yu, Galiev G.B., Kazakov I.P., Chervyakov A.V.
  • â æóðíàëå Semiconductors, èçäàòåëüñòâî Izdatel'stva Nauka (Russian Federation), òîì 49, ? 9, ñ. 1202-1206 DOI
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  • 2015 Crossover between transport mechanisms in the region of the transition from sublinearity to superlinearity of the AC-conductivity frequency dependence for disordered semiconductors
  • Ormont M.A.
  • â æóðíàëå Semiconductors, èçäàòåëüñòâî Izdatel'stva Nauka (Russian Federation), òîì 49, ? 10, ñ.  1270-1275 DOI
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  • 2015 Density of surface states in colloidal CdSe nanoplatelets
  • Katsaba A.V., Fedyanin V.V., Ambrozevich S.A., Vitukhnovsky A.G., Sokolikova M.S., Vasiliev R.B.
  • â æóðíàëå Semiconductors, èçäàòåëüñòâî Izdatel'stva Nauka (Russian Federation), òîì 49, ? 10, ñ. 1323-1326 DOI
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  • 2015 Experimental determination of the electron effective masses and mobilities in each dimensionally-quantized subband in an In (x) Ga1-x As quantum well with InAs inserts
  • Kulbachinskii V.A., Oveshnikov L.N., Lunin R.A., Yuzeeva N.A., Galiev G.B., Klimov E.A., Maltsev P.P.
  • â æóðíàëå Semiconductors, èçäàòåëüñòâî Izdatel'stva Nauka (Russian Federation), òîì 49, ? 2, ñ. 199-208 DOI
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  • 2015 Influence of buffer-layer construction and substrate orientation on the electron mobilities in metamorphic In0.70Al0.30As/In0.76Ga0.24As/In0.70Al0.30As structures on GaAs substrates
  • Kulbachinskii V.A., Oveshnikov L.N., Lunin R.A., Yuzeeva N.A., Galiev G.B., Klimov E.A., Pushkarev S.S., Maltsev P.P.
  • â æóðíàëå Semiconductors, èçäàòåëüñòâî Izdatel'stva Nauka (Russian Federation), òîì 49, ? 7, ñ. 921-929 DOI
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  • 2015 Light-Induced Relaxation of the Metastable Conductivityof Undoped a-Si:H Films Illuminated at Elevated Temperatures
  • Kurova I.A., Ormont N.N.
  • â æóðíàëå Semiconductors, èçäàòåëüñòâî Izdatel'stva Nauka (Russian Federation), òîì 49, ? 5, ñ. 590-592 DOI
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  • 2015 Photoluminescence of GaAs/AlGaAs quantum ring arrays
  • Sibirmovskii Y.D., Vasil?evskii I.S., Vinichenko A.N., Eremin I.S., Zhigunov D.M., Kargin N.I., Kolentsova O.S., Martyuk P.A., Strikhanov M.N.
  • â æóðíàëå Semiconductors, èçäàòåëüñòâî Izdatel'stva Nauka (Russian Federation), òîì 49, ? 5, ñ. 638-643 DOI
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  • 2015 Specific features of the frequency dependence of the conductivity of disordered semiconductors in the region of the crossover between transport mechanisms
  • Ormont M.A., Zvyagin I.P.
  • â æóðíàëå Semiconductors, èçäàòåëüñòâî Izdatel'stva Nauka (Russian Federation), òîì 49, ? 4, ñ. 437-441 DOI
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  • 2015 Structural and photoluminescent properties of nanowires formed by the metal-assisted chemical etching of monocrystalline silicon with different doping level
  • Georgobiani V.A., Gonchar K.A., Osminkina L.A., Timoshenko V.Yu
  • â æóðíàëå Semiconductors, èçäàòåëüñòâî Izdatel'stva Nauka (Russian Federation), òîì 49, ? 8, ñ. 1025-1029 DOI

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