Äîêóìåíò âçÿò èç êýøà ïîèñêîâîé ìàøèíû. Àäðåñ îðèãèíàëüíîãî äîêóìåíòà : http://phys.msu.ru/upload/iblock/238/2009-00-00-suyatin.pdf Äàòà èçìåíåíèÿ: Fri Sep 4 12:56:32 2009 Äàòà èíäåêñèðîâàíèÿ: Mon Oct 1 21:04:42 2012 Êîäèðîâêà:

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InAs, . . , : - InAs . - InAs. - - InAs (NH4)2Sx, InAs

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. InAs. , , , InAs . , , , , , , . . . , . , , : [1, 2, 4-7], [1-8], [1-8], [1-8], [1-8]. . , , : · ­ 2007 (ICON), , . · - ­ 2007 (MNE), , .
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· ­ 2006 (ICPS), , . · ­ 2006, , . · ­ 2006 (Nanostructures: physics and technology), -, . · - ­ 2005 (MNE), , . · ­ 2005 (Niels Bohr Summer Institute), , . . , , . 159 . 40 153 .

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, . , . InAs InAs. , . , , . ( ) , , , . . , InAs, .

, () () [10]. [14]. , . InAs .
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InAs . , InAs () , , [000-1], <-1100>, . . , InAs , . InAs 100 . , , . . , . . () 950000.
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, (NH4)2Sx. 25 90 . . . : (1) , (2) . , , 20 . , , . InAs InAs. InAs : (1) - () , ; (2) , . InAs : (3)
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; (4) () () . InAs , . 1. , , . , SiO2 100 . , , . , InAs . , , <-1100>, . , 20 , , . InAs InAs.

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. 1. InAs . (

InAs), , InAs 40 100 .

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( ) . , InAs , [16]. [16]. InAs , , , . InAs. - , , - . InAs (NH4)2Sx . InAs . , , . . , , .
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, ( 2 %) , , 65 °C . , InAs.

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InAs [17]. , , . InAs. , InAs . . , .





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. . InAs. , , , , . . InAs. . 2 (VC) (VL), (VR), (). 4,2 , (VBG) . 1. . 2, . , InAs, : (1) , ; ; (2) , (3) , . .
18


. 2. (VC) (VL) (VR) () 4,2 . , (VBG) InAs, . 1.

, . (VC), , , (VL) (VR) , :
VC (VL , VR ) = VL RR + VR RL , RR + RL

(1)

19


RL RR ­ . , VC VL VR RL RR. (V = VL = -VR), , , (VC), :
1 VC = - V 2 + (V 4 ), 2

(2)

> 0 [18]. , . [18]. , . , , . , , VC(VL, VR) , ( (1)).

20


. , InAs 4,2 K 100 . . , VC, , :
VC (VL , VR ) = a 00 + a10VL + a 01VR + a 20VL2 + a11VLVR + a 02VR2 + ... .

(3)

V L = AL sin( 2f L t ) V R = AR sin( 2f R t + LR ) (3) . , , InAs, 100 . , , . , InAs, . , , InAs , , . ,
21


InAs 4,2 K 100 . . .
1. Hiruma K., Yazawa M., Katsuyama T., Ogawa K., Haraguchi K., Koguchi M., and Kakibayashi H. Growth and optical properties of nanometer-scale GaAs and InAs whiskers // J. Appl. Phys. ­ 1995. ­ Vol. 77. ­ P. 447-462. 2. Yang P., Wu Y., and Fan R. Inorganic semiconductor nanowires // International J. Nanosci. ­ 2002. ­ Vol. 1. ­ P. 1-39. 3. Samuelson L. Self-forming nanoscale devices // Mater. Today. ­ 2003. ­ Vol. 6. ­ P. 22-31. 4. Wong E.W., Sheehan P.E., and Lieber C.M. Nanobeam mechanics: Elasticity, strength, and toughness of nanorods and nanotubes // Science. ­ 1997. ­ Vol. 277. ­ P. 1971-1975. 5. BjÆrk M.T., Ohlsson B.J., Sass T., Persson A.I., Thelander C., Magnusson M.H., Deppert K., Wallenberg L.R., and Samuelson L. One-dimensional heterostructures in semiconductor nanowhiskers // Appl. Phys. Lett. ­ 2002. ­ Vol. 80. ­ P. 1058-1060. 6. Lieber C.M. Nanoscale science and technology: building a big future from small things // MRS Bull. ­ 2003. ­ Vol. 28. ­ P. 486-491. 7. Thelander C., Agarwal P., Brongersma S., Eymery J., Feiner L.F., Forchel A., Scheffler M., Riess W., Ohlsson B.J., GÆsele U., and Samuelson L. Nanowire-based one-dimensional electronics // Materials Today. ­ 2006. ­ Vol. 9. ­ P. 28-35. 8. Lu W., and Lieber C.M. Nanoelectronics from the bottom up // Nat. Mater. ­ 2007. ­ Vol. 6. ­ P. 841-850. 9. Cui Y., Banin U., BjÆrk M.T., and Alivisatos A.P. Electrical transport through a single nanoscale semiconductor branch point // Nano Lett. ­ 2005. ­ Vol. 5. ­ P. 1519-1523.







,

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10. Dick K.A., Deppert K., Larsson M.W., MÅrtensson T., Seifert W., Wallenberg L.R., and Samuelson L. Synthesis of branched "nanotrees" by controlled seeding of multiple branching events // Nat. Mater. ­ 2004. ­ Vol. 3. ­ P. 380-384. 11. Wang D., Qian F., Yang C., Zhong Z., and Lieber C.M. Rational Growth of Branched and Hyperbranched Nanowire Structures // Nano Lett. ­ 2004. ­ Vol. 4. ­ P. 871-874. 12. Dick K.A., Geretovszky Z., Mikkelsen A., Karlsson L.S., Lundgren E., Malm J.-O., Andersen J.N., Samuelson L., Seifert W., Wacaser B.A., and Deppert K. Improving InAs nanotree growth with composition-controlled Au­In nanoparticles // Nanotechnology. ­ 2006. ­ Vol. 17. ­ P. 1344-1350. 13. Dick K.A., Deppert K., Karlsson L., Seifert W., Wallenberg L., and Samuelson L. Position-controlled interconnected InAs nanowire networks // Nano Lett. ­ 2006. ­ Vol. 6. ­ P. 2842-2847. 14. .. // .: , 1977. ­ 304 . 15. Thelander C., BjÆrk M.T., Larsson M.W., Hansen A.E., Wallenberg L.R., and Samuelson L. Electron transport in InAs nanowires and heterostructure nanowire devices // Solid State Commun. ­ 2004. ­ Vol. 131. ­ P. 573-579. 16. .., .. AIIIBV // . ­ 1998. ­ . 32. ­ . 1281-1299. 17. .., .. // . ­ 2007. ­ . 41. ­ . 1281-1308. 18. Xu H.Q. Electrical properties of three-terminal ballistic junctions // Appl. Phys. Lett. ­ 2001. ­ Vol. 78. ­ P. 2064-2066.

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InAs, , InAs. InAs InAs. : 1. InAs . InAs 70-100 50-80 . . , , [000-1], <-1100>, . 2. 20 , . , . 3. InAs 40 100
24






. . , , , 10-6 2, InAs. 4. InAs . InAs ,

, , . . , InAs 4,2 K 100 . 5. . , 100 300 K.

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1. Suyatin D.B., Sun J., Fuhrer A., Wallin D., FrÆberg L.E., Karlsson L.S., Maximov I., Wallenberg L.R., Samuelson L., and Xu H.Q. Electrical Properties of Self-Assembled Branched InAs Nanowire Junctions // Nano Lett. ­ 2008. ­ Vol. 8. ­ N. 4 ­ P. 1100-1104. 2. .., ., ., .., . // . ­ 2007. ­ . 3. ­ 11 ­ . 67-70. 3. Suyatin D.B., Thelander C., BjÆrk M.T., Maximov I. and Samuelson L. Sulfur passivation for ohmic contact formation to InAs nanowires // Nanotechnology. ­ 2007. ­ Vol. 18. ­ P.105307 (1-5). 4. Suyatin D.B., Sun J., Fuhrer A., Wallin D., FrÆberg L.E., Karlsson L.S., Maximov I., Wallenberg L.R., Samuelson L., and Xu H.Q. Nanoelectronic devices with self-assembled branched InAs nanowires // International Conference on One-dimensional Nanomaterials: Proceedings of Second International Conference. ­ MalmÆ, Sweden, 2007. ­P. 63. 5. Suyatin D.B., Sun J., Fuhrer A., Wallin D., FrÆberg L.E., Karlsson L.S., Maximov I., Wallenberg L.R., Samuelson L., and Xu H.Q. Self-Assembled branched InAs nanowires for nanoelectronic applications // Micro- and Nano- Engineering: Abstracts book of 33-rd International Conference. ­ Copenhagen, Denmark, 2007. ­ 1C-2. 6. Suyatin D.B., Wallin D., FrÆberg L.E., Karlsson L.S., Maximov I., Wallenberg L.R., Xu H.Q., and Samuelson L. Electrical Properties of three-terminal InAs nanowire junctions // International Conference on the Physics of Semiconductors: Abstracts book of 28-th International Conference. ­ Vienna, Austria, 2006. ­ P. 333. 7. Suyatin D.B., Wallin D., FrÆberg L.E., Karlsson L.S., Maximov I., Wallenberg L.R., Samuelson L., and Xu H.Q. Fabrication and electron transport study of three-terminal InAs nanowire junctions // Nanostructures: physics and technology: Proceedings of 14-th International Conference. ­ -, , 2006. ­ C. 228-229.
8. Suyatin D.B., BjÆrk M.T., Thelander C., Maximov I. and Samuelson L. Sulfur passivation for formation

of ohmic contacts to InAs nanowire devices // Micro- and Nano- Engineering: Abstracts book of 31-st International Conference. ­ Vienna, Austria, 2005. ­ 3-p_06.

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