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.. ______________________________________________________________

AlxGa1xAs/GaAs/AlxGa1xAs GaAs/InyGa1yAs/GaAs
01.04.09 -

-

___________________________________________________________ 2006

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IIIBV , . , , , . , . , , , . , , , . , . , . ( ). . , . , , , .

1

, , - . , . , . , . , , . . () , - . GaAs/In Al
0.22

Ga

0.78As/GaAs/Al0.22

Ga

0.78

As

(I

)

0.12Ga0.88

As/GaAs (II ) GaAs.

: AlAs , In0.7Ga0.3As . . , . . : ( AlAs In0.7Ga0.3As) . « » « ». . , ,

2

( - ). .

:

. , , . , . , 1) Al
0.22

Ga

0.78As/GaAs/Al0.22

Ga

0.78

As

AlAs . , - . 2) GaAs/In
0.12

Ga

0.88

As/GaAs

AlAs . , . , , AlAs - . 3) GaAs/In
0.12

Ga

0.88

As/GaAs

AlAs,

3

. , - , Ga - . 4) GaAs/In
0.12 0.88

As/GaAs In0.7Ga0.3As

In . , , . In0.7Ga0.3As. 5) , , . , . . , , . c - () (). , , , . ,

4

. . , . , . , , . , AlAs , . , ( ) . GaAs/In
0.12

Ga

0.88

As/GaAs

AlAs . . . : 8, 2002, (), 1

;

«-2002» (); International Symposium on Nanostructures Nano2003, (St. Petersburg); XXXIII , -33, 2003 (); VI , 2003 (-); International Workshop on Modulation Spectroscopy of Semiconductor Structures, 2004 (Wroclaw); «-2004»

5

(); International Symposium on Nanostructures Nano-2004 (St. Petersburg); VII 2005; 5- , , 2005 (); International Conference on Micro- and Nanoelectronics, ICMNE-2005, , ,

, - 2005, (); 7- , 2005, (), 2 . . 21 . . . , , 190 . 182 , 81 16 . , , , , , . . AIIIBV.

, , , , . AlAs , ( ) . . .

6

,

, . - , . . , , .

, . 13, 26 35 , AlAs 1.8 . - . 16 11 , AlAs - 1 , In0.7Ga0.3As - 1 . 8.5 . 3 , . AlxGa
1 -x

As/GaAs/AlxGa

1 -x

As GaAs/InyGa

1 -y

As/GaAs.

/ , () /, - , , . , - , AlAs : AlxGa
1 -x

As/GaAs/AlxGa

1 -x

As

, .

7

GaAs/InyGa

1-yAs/GaAs

( ),

AlAs . , , -. . 1, 1 - , 2 AlAs. - AlAs =77 , , .

,
. 1. GaAs/In0.12Ga0.88As/GaAs

. ,

- . . () 0.25 4.2 . - . 3 . , . ( ) . AlAs

8

, . , 2 2 (. 1). , . : AlAs In0.7Ga0.3As .

,

. .
. 2. Al0.22Ga0.78As/GaAs/Al0.22Ga0.78As

: 13 (. 2-3), 26 - (. 4-5), 35 (. 6-7, . . 2). . AlAs 1 . , , , . . , , -,

9

(). , , , AlAs . (. . 1). : - (. 1, 1 2 . 1, 0 1 . 2) , - ( 0 . 1, 2 3 . 2). , . 2 2. - , -. 1 In0.7Ga0.3As GaAs/In
0.12

Ga

0.88As/GaAs

. , , . , , In0.7Ga0.3As, , . In0.7Ga0.3As , . , . Pn , . , Pn n, n

10

1 / n : Pn 1 / 2 xn (exp{

a(q ) b( q ) (1 + )} , q = (1 + ) 2 / x . n n

() Pn . () . ,
2.72 1.00

, . . 3
{1/} (G0)

0.37 0.14 0.05 0.02 0.01

5 , () ,

5V
=0.07

Btr=0.032
0.1 1 10 100

x (B/Btr )

,

. 3. 5 ()

. (~10В100), . (S < ) , , * = +2S. F(x, ), . < 0.1 S <

10% (), . 1) . : GaAs/InyGa
1-yAs/GaAs.

AlxGa

1 -x

As/GaAs/AlxGa

1 -x

As

,

11

, , 40 , - 0.3 <<4.2 . , , - , , . 2) AlAs Al
0.22

Ga

0.78As/GaAs/Al0.22

Ga

0.78

As,

. , . , - . GaAs/In ,
0.12

Ga

0.88As/GaAs

AlAs

, , , . : , AlAs . 3) , In0.7Ga0.3As 1 GaAs/In
0.12

Ga0.88As/GaAs,

. , . In0.7Ga0.3As.

12

4) GaAs/In

0.12Ga0.88

As/GaAs

AlAs , . , , - . . 5) . , .

, . 6) GaAs/In
0.12

Ga

0.88

As/GaAs ,

. -. Al
0.22

Ga

0.78As/GaAs/Al0.22

Ga

0.78

As.

,

. 7) , , . , .

,

13

. , , . : 1. . . , . . ; « AlGaAs/GaAs/AlGaAs AlAs », - 8, . , . 170-171 (2002) 2. . . , . . ; « AlGaAs/GaAs/AlGaAs AlAs», 3. «-2002», . , . 203-204 (2002) . . , . . , . . , . . , . . , . . , . . , . . ; », , 37, 6, . 711-716 (2003) 4. V.A. Kulbachinskii, R.A. Lunin, I.S. Vasil'evskii; «Peculiarities of electron transport in the coupled AlGaAs/GaAs quantum wells with central AlAs barrier», Int. J. of Nanoscience, 2 (6), p. 565-573 (2003) 5. V.A. Kulbachinskii, R.A. Lunin, I.S. Vasil'evskii, G.B. Galiev, V.G. Mokerov, V.E. Kaminskii; «Peculiarities of electron transport in the coupled AlGaAs/GaAs quantum wells with central AlAs barrier», proceedings of 11th Int. Symposium on Nanostructures Nano-2003, p. 402-403 (2003) 6. L.P. Avakyants, P.Yu. Bokov, A.V. Chervyakov, G.B. Galiev, E.A. Klimov, I.S. Vasil'evskii; «Room temperature photoreflectance investigation of undoped and doped GaAs/AlGaAs quantum well structures», Proc. SPIE, vol. 5401, p. 605-607 (2003) 7. . . , . . , . . , . . , . . , .. ; « AlGaAs/GaAs, AlAs», XXXIII , -33, . , . 298-299 (2003) «

14

8.

. . , . . , . . , . . , . . ; « AlGaAs/GaAs/AlGaAs/GaAs», VI , . , . 301-302, (2003)

9.

. . , . . , . . , . . ; « », , 38, . 11, . 1368-1373 (2004)

10. L. P. Avakyants, P. Yu. Bokov, A. V. Chervyakov, G. B. Galiev, E. A. Klimov, I. S. Vasil'evskii; «Photoreflectance investigation of GaAs/AlGaAs quantum well structures with various level of doping», International Workshop on Modulation Spectroscopy of Semiconductor Structures, proceedings, p. 39-40 (2004) 11. . . ; « AlGaAs/GaAs/AlGaAs », «-2004», . , . 318-320 (2004) 12. G. B. Galiev, V. E. Kaminskii, V. G. Mokerov, I. S. Vasil'evskii, V. A. Kulbachinskii, R. A. Lunin; «Magnetotransport in doped geterostructures with coupled quantum wells», International Symposium on Nanostructures Nano2004, proceedings, p. 348-349 (2004) 13. . . , . . , . . , . . , . . , . . , . . , . . , . . ; « AlGaAs n-AlGaAs/GaAs/n-AlGaAs AlAs GaAs», , 34, 1, . 52-62 (2005) 14. . . , . . , . . , . . ; « - - PHEMT AlxGa1-xAs/InyGa1-yAs/GaAs», , 34, 6, . 403-409 (2005) 15. . . , . . ; . . , « . . , . . ,

GaAs/InGaAs/GaAs : AlAs», VII , . , . 244 (2005)

15

16. V. E. Kaminskii, G. B. Galiev, V. G. Mokerov, I. S. Vasil'evskii, R. A. Lunin, V. A. Kul'bachinskii; «Magnetoresistance Of Coupled Quantum Wells In Quantizing Magnetic Field», International Conference on Microand Nanoelectronics, ICMNE-2005, . , p. O2-09 (2005). 17. I. S. Vasil'evskii, V. A. Kulbachinskii, G. B. Galiev, R. M. Imamov, A. A. Lomov, D. Yu Prohorov ; «Structural and electrophysical properties of pseudomorphic GaAs/InGaAs/GaAs quantum wells: effect of thin central AlAs barrier», International Conference on Micro- and Nanoelectronics ICMNE-2005, . , p. 2-23 (2005). 18. . . , . . , . . , . . , . . . P. Kacerovsky, « . . ,

A3B5», 5- , , , - 2005, . , . 250 (2005) 19. . . ; « - GaAs/InGaAs/GaAs», 7- , -, . , . 48 (2005) 20. . . ; « », 7- , , . , . 47 (2005) 21. L. P. Avakyants, P. Yu. Bokov, A. V. Chervyakov, G. B. Galiev, E. A. Klimov, I. S. Vasil'evskii, V. A. Kulbachinskii; «Interband optical transitions in the GaAs modulation doped quantum wells: photoreflectance experiment and self-consistent calculations»; Semicond. Sci. Technol., 21, p. 462-466 (2006)

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