Äîêóìåíò âçÿò èç êýøà ïîèñêîâîé ìàøèíû. Àäðåñ îðèãèíàëüíîãî äîêóìåíòà : http://phys.msu.ru/upload/iblock/b94/2007-00-00-badgutdinov.pdf Äàòà èçìåíåíèÿ: Wed Sep 17 23:31:44 2008 Äàòà èíäåêñèðîâàíèÿ: Mon Oct 1 21:08:44 2012 Êîäèðîâêà:

..




p-n- InGaN/AlGaN/GaN
/ 01.04.10 ­ /

-

2007


...

: , - .. : - .. .. : - "" «11» 2007 ________ 501.001.70 ... : 119992, , ., , ..., , .2-05. .... «_____» 2007

501.001.70 . .. -

..

2


1.1. . [1, 2]. GaN , , , . () 63% [3], ­ 131 / 150 /, , . ( ), ( ) ( , ) [4]. , ­ , 150 /, 63%, 40%. ,

i e . i .
, . e, ­ , . , , ; . , , , .

3


( "­", "", " " .). , - "­ " "ACOL-Technologies", . , p-n- InGaN/AlGaN/GaN . , , , . 1.2. . InGaN/AlGaN/GaN . p-n- InGaN/AlGaN/GaN, , . : 1. , . 2. , , . 3. ; , . .

4


4.

, , . . 1.3. , :

. p-n InGaN/AlGaN/GaN c . , ( 10% ) p-n- InGaN/AlGaN/GaN . , p-n- InGaN/AlGaN/GaN InGaN/GaN, . , . , 12 28% , , , p-. 1.4. , . 1. InGaN/AlGaN/GaN . 2. , -AlGaN , .
5


3.

, , , GaN, , ( , p-AlGaN) 46 100 , ­ 28% J = 2 .

4.

p-n- InGaN/AlGaN/GaN 2.76 InGaN/GaN, .

5.

p-n- InGaN/AlGaN/GaN , SiC, . , SiC P = 1622% 100-350 .

6.

, SiC 40 /, ­ 50 350 ., , .

7.

3340 9920 . . 1.5. . ,
-7

( 10 (5 ) 2 ) ( 0.1å).



6


. InGaN/AlGaN/GaN . GaN . , , , . GaN InGaN/AlGaN/GaN . . . - N 170/05- 20.08.2005 ( -159/05), . « ». - N 104/05- 23.05.2005 «-», p-n- . 1.6.

.

,



,

7


1.7. . 5 4 : 1. 2. 3. 4. 5. 6. 7. 8. 9. 4- 5- « , : », . C.- 2005, 2007. 7- , , 2005. VII VIII - , -, 2005, 2006. VIII «-, , ». , 2006. - « ». , 2005. 12 . . . . «, », , , 2006 . VI « ». , , 2006. MRS Fall Meeting 2006. Boston, 2006. ..-. . . .: , 2007.

10. , , , 2007. 1.8. . 8 ­ , , , , , , , . 110 , 51 7 . 2. . AlGaN/InGaN/GaN , . , - , .
8
















InGaN/AlGaN/GaN, , . , , . - . p-n- , p- . . , , . 3. . , . N2D( , Eg*, E0), E0, Eg* :
N
2D 2 N0 D - Eg 1 + e xp - E0

(

, E g , E0 ) =

(1)

,

f c Ec , Fn , kT

(

)



[1 - f v (E v , Fp , kT )] :

9


f c [1 - f v ] =

1 f ( - E * ) - F g 1 + exp kT

F

(

E * , F , k T g

)

(2)


F = -( E g - eU ) = ( Fn + Fp ) < 0 .

(3)

fif:
I

( )

= A0 * N

2D

(

, E g , E

0

)

f c (1-f v )f if ,

(4)

A0* . , A0 fif.

max








ma

x

, fif :
f if (a, E , E ) = 1 2 ( - E ) ; 1 - a cos E

(5)

a ­ , E ­ , E ­ ( :
I ( ) = A0 N
2D

max). , ,

f F f if .

(6)

4.

. -12 1 å, 0,3­0,4 (450­550 ). , . , , -10­+55.
10


0.2%. , : . 100 , («ACOL Technologies», «», «-»). ( «»), SiC. S = 0.8 2 ( p-n- ), ( 350 ). ( «») D-180 VEECO. n, . - ; «» 0,144 2 «flip-chip» - (. 1()). . - , GaN- . . 1() , [5], . , : eU = Fn - Fp . - . , . , .
11


+2.8 V Bias Voltage 0 p-GaN -1 Energy, eV p-AlGaN -2 Eg* -3 -4 1000 1200 1400 1600 1800 2000 5 MQW InGaN/GaN eU

Ec Ev

EC

n-GaN

EV
2200

Distance, Angstroms

)

)

. 1. p-n- InGaN/AlGaN/GaN ()

().
5. .

. , , SiC Al2O3 ; . , SiC ,
max

455Â450

( max = 2.729 Â 2.755 ) 10 350 = (17 ± 1) GaN d 2.3 . J = 300Â350 ( j = 38 Â 44 /2). 350 200-270 , P 21-28%. ( ) 26 40 / (30­50 ), ­ 4500 11600 . . 2 , , Al2O3 , ,
12


, () , - , i-GaN, () p-AlGaN.
2.739 eV 452 nm

E060718aR\8
100

1 mA 50 mA 350 mA

10

2

2.743 eV 452 nm

1mA 50mA 350mA

10

1

intensity, a.u.

intensity, a.u.

10

10

0

1

2.655 eV 467 nm
max = 70 meV

10

-1

2.661 eV 466 nm max = 82 meV FWHM = 186 meV

0.1

10

-2

FWHM = 167 meV
10
-3

0.01 2.2 2.4 2.6 2.8 3.0 3.2

2.2

2.4

2.6

2.8

3.0

3.2

3.4

Energy , eV

Energy , eV

)

)

. 2. 1

350 i-GaN () p-AlGaN (). :

max 2,70­2,78 (

max

445­460 )

100­350, . GaN, , D = 5.3 Â 6.0 . i-GaN ( 1) p-AlGaN ( 7) E0 = 56 75 , , AlGaN/InGaN , , . . n- . , p-AlGaN, , (. 3).
13


1000 100 10 1 0.1 0.01 1E-3

max = 2.676 eV

2.700 eV

E060529a

2.307 V

2.700 V
10

J = 20 mA V = 2.889 V eU = 2.689 eV

Intensity, arb. units

Current J, mA

1

Eg* = 2.789 eV

2.307 eV

0.1
1E-4 1.0 1.5 2.0 2.5 3.0 3.5

2.3

2.4

2.5

2.6

2.7

2.8

2.9

3.0

Voltage V, V

Energy , eV

)

)

. 3.

n- ( 7). () ( ). , (). , , . , i-GaN, p-AlGaN, . 4. J 1­20 ( 2,5 100 ). . AlGaN 46 100 . 28% J = 2 17% 100 .

14


35.0 30.0 Efficiency factor, % 25.0 20.0 15.0 10.0 5.0
n- (x3) x2.5 x10 p-AlGaN

28 %

i-GaN

1

10 Current J, mA

100

. 4. .















InGaN/GaN,

(. 5) , [6], 2.74 ­ 2.86 . . 5 . , , (Ei), (E*g), . : () () p-n- () . p-n- , , . . , ,

15


Blue LED N 120, InGaN/AlGaN/GaN, MQW

max= 2.654 eV

Eg = 2,71 eV

*

R/R, a.u.

Ei = 2,757 eV

2,1

2,2

2,3

2,4

2,5

2,6

2,7

2,8

2,9

3,0

3,1

3,2

Energy , eV
n E

EL intensity, a.u.
/ R t n i L E

. 5. 120.

Eg* Ei, [6]. (RGB) . , , . , 3350 9900 .
6.

. , GaN , SiC , (2.3 ), , , (4.2­6.0 ). , SiC- , , .

16


L 46 ­ 50 L 37-40 / . , . , - Eg* . Eg* p-n-
E,









InGaN/AlGaN/GaN. InGaN, , p-n- . InGaN E 6·105 / ; , .

7.

: 7.1. , . InGaN/AlGaN/GaN . 7.2. InGaN/AlGaN/GaN

, . .
17


7.3.











GaN, . , n- 3·1018 -3, p-AlGaN. 46 100 , ­ 28% J = 2 . 7.4. p-n- InGaN/AlGaN/GaN , SiC, . P = 16-22% 100350 . , GaN . 7.5. p-n- InGaN/AlGaN/GaN . p-n- InGaN/AlGaN/GaN , . 7.6. , . ,

SiC, 40 /, ­ 50 350 . , , . 7.7. , 3350 9900 . -1931. (x = 0,27-0,48; y = 0,21-0,37)

18


8.

: 1. .., .., .., .., .., .., .. ... , p-n- InGaN/GaN, . , 2006, 40, . 6, . 758-763. 2. .., .., .., .. .., ... . , 2006, N3, . 36-40. 3. .., .., .., .., .., .., .., .., .., ... InGaN/AlGaN/GaN. , 2007, 41, N 9, .1078­1084. 4. A.E.Yunovich, L.Avakyants, M.Badgutdinov, P.Bokov, A.Chervyakov, S.Shirokov, E.Vasileva, A.Feopentov, F.Snegov, D.Bauman, and B.Yavich. Electroreflectance Spectra of InGaN/AlGaN/GaN p-n-Heterostructures. MRS Symp. Proc. V.955. Paper 0955-I15-36. 5. .., .., .., .., .., .., .., ... , InGaN/AlGaN/GaN, . 4- « , : », . C.-, 2005, , .140. 6. .., .., .., .., .., .., .., ... InGaN/AlGaN/GaN, . 7- , , 2005 ., . , .105. 7. .., .., ... . VII - , -, 2005, . 98. 8. .., .., .., .., .., .., .., .., .., ... InGaN/AlGaN/GaN.
19


VIII «-, , ». , 2006. .172. 9. .., .., .., .., InGaN/GaN. .., VIII .., ... p-n- «-, ,

. , 2006. .200. 10. .., ... . - « ». , 2005. .23. 11. .., .., .., ... . 12 . . . . «, », , , 2006 ., ... 1. .209-210. 12. .., .., .., .., ... . VI « ». , , , 2006, . 50-51. 13. A.E.Yunovich, L.P.Avakyants, M.L.Badgutdinov, P.Yu.Bokov, A.V.Chervyakov, S.S.Shirokov, E.D.Vasileva, A.V.Feopentov, F.M. Snegov, D.A.Bauman, and B.S.Yavich. Electroreflectance spectra of InGaN/AlGaN/GaN p-n-heterostructures. MRS Fall Meeting 2006, Boston, 2006, Abstr. I 15.36. 14. .., ... p-n- InGaN/AlGaN/GaN. - . . 2006; . ., . 101. 15. .., .., .., .., .., .., ... p-n- InGaN/AlGaN/GaN. 5- « , : », , 2007, , .89. 16. .., .., .., .., .., ... p-n-

20


InGaN/AlGaN/GaN. 5- « , : », , 2007, , .105. 17. .., .., .., .. ( -: .., .. . .171,172. 18. .., ... p-n- InGaN/AlGaN/GaN. , , , 2007, , .55.


,







//



..-. . : . .- .: , 2007. .1.

1. E.F.Schubert. Light Emitting Diodes. Second edition. ­ Cambridge University Press, 2006. (www.LightEmittingDiodes.org). 2. ... // . ­ 2003. 3. ­ . 2-7. 3. Y.Narukawa, J.Narita, T.Sakamoto, K.Deguchi, T.Yamada and T.Mukai. Ultra-High Efficiency White Light Emitting Diodes // Japanese Journal of Applied Physics. ­ 2006. V. 45, N 41. ­ P. L1084­L1086. 4. C.Wetzel. Basic research needs for solid-state lighting. Report of the Basic Energy Sciences Workshop on Solid-State Lighting. ­ U.S. Department of Energy, 2006. (http://www.sc.doe.gov/bes/reports/files/SSL_rpt.pdf). 5. Yunovich A.E., Kudryashov V.E. Energy Diagram and Recombination Mechanisms in Heterostructures InGaN/AlGaN/GaN with Quantum Wells // Phys. Stat. Solidi (b). ­ 2001. V. 228, N 1. P. 141-145. 6. D.E.Aspnes. Third-derivative modulation spectroscopy with low field electroreflectance // Surf. Science. ­ 1973. V. 37. ­ P. 418.

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