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5-th All-Russian Conference - Timetable

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5-th All-Russian Conference

"Nitrides of gallium, indium and aluminum: structures and devices"

 

 

Ministry of Education and Science of Russian Federation,

Russian Academy of Science,

M.V.Lomonosov Moscow State University Department of Physics,

Institute of UHF Semiconductor Electronics,

Ioffe Physico -Technical Institute of the Russian Academy of Science

 

 

 

At Financial Support of

"Svetlana Optoelectronics"

"Scientific and Technology Equipment"

'AIXTRON'

"VEECO"

'LAY TEC -GESELLSCHAFT'

'TDI'

 

 

 

CONFERENCE PROGRAMME

 

 

 

 

 

 

 

 

 

 

M.V.Lomonosov Moscow State University Department of Physics

 

 

Moscow

January 31 - February 2

2007

 


WENESDAY, JANUARY 31

 

Registration - 9.00 - 11.30

Moscow State University Department of Physics, room 1-31

 

Morning Session, 11.30 - 14.25

Department of Physics, Hohlov's Room

 

Opening 11.30. - 12.00

 

11.30 - 11.40 Welcome to Moscow State University - Chairman - prof. P.K. KASHKAROV

 

11.40-11.45 Information. Scientific secretary A.N. Turkin

 

11.45 - 12.00 RESEARCH AND DEVELOPMENT OF NITRIDE SEMICONDUCTORS IN RUSSIA AND IN THE WORLD

A.E.Yunovich

 

12.00 - 14.25 Epitaxy of III-N materials

Chairman - P.S. Kop'ev

 

12.00 - 12.15 III-N LEDs ON SiC SUBSTRATES. MOCVD GROWTH DEVELOPMENT

W.V.Lundin, A.E.Nikolaev, E.E.Zavarin, M.A.Sinitsyn, A.V.Sakharov, S.O.Usov, and A.F.Tsatsulnikov

 

12.15 - 12.30 EFFECT OF PARASITIC CHEMISTRY IN AlGaN MOVPE

A.V. Lobanova, E.V. Yakovlev, R.A Talalaev

 

12.30 - 12.45 NON-POLAR a-(In)GaN HETEROSTRUCTURES

E.E.Zavarin, W.V.Lundin, M.A.Sinitsyn, A.E.Nikolaev, A.V.Sakharov, D.S.Sizov, M.M.Kulagina,

and A.F.Tsatsulnikov

 

12.45 - 13.00 THE EPITAXIAL LAYERS OF GaN ON Si(111) SUBSTRATES:

THE STRUCTURAL AND OPTICAL PROPERTIES.

V. N. Bessolov, V.Yu.Davydov, Yu.V.Zhilyaev, E.V.Konenkova, N.K.Poletaev, S.D.Raevskii, S.N.Rodin, S.L.Smirnov, S.Sharofidinov, M.P. Shcheglov, H.S. Park и M. Koike

 

13.00 - 13.15 Break

 

Chairman - M.G. Milvidskij

 

13.15 - 13.35 CVD TECHNOLOGY AND PRODUCTION FOR SOLID STATE LIGHTING

F. Schulte, B. Schineller, M. Heuken

 

13.35 - 13.50 ROLE OF COMPUTATION FLUID DYNAMIC IN THE NEW MOCVD EQUIPMENT AND PROCESS DEVELOPMENT FOR GaN MATERIALS

B. Mitrovic, A. Gurary, B. Quinn, E. Armour

 

13.50 - 14.05 TEMPERARURE MEASUREMENT AND CONTROL DURING DEPOSITION OF THE GaN RELARED MATERIALS

M. Belousov, B. Mitrovic, S. Ting, A. Gurary, B. Quinn

 

14.05 - 14.25 ON THE PHYSICS OF OPTICAL IN-SITU MONITORING OF MOVPE GROWTH PROCESSES FOR STATE-OF-THE-ART III-NITRIDE DEVICES

E. Steimetz, F. Brunner, T. Schenk, T. Trepk, and J.-T. Zettler

 

14.25 - 15.30 LUNCH


Evening Session 15.30 - 19.00

Department of Physics, Hohlov's Room

 

15.30 - 16.30 Epitaxy and bulk growth of III-N Materials

Chairman - A.A. Arendarenko

 

15.30 - 15.45 GROWTH OF GaN LAYERS BY HYDRIDE VAPOR PHASE EPITAXY

A.V.Govorkov, L.I. D'yakonov, Yu.P. Kozlova, A.V. Markov, M.V. Mezhennyi, A.Y. Polyakov, V.F. Pavlov, N.B. Smirnov, T.G. Yugova

 

15.45 - 16.00 PECULIARITIES OF AlN-GaN COMPOUNDS GROWTH KINETICS BY AMMONIA-BASED MOLECULAR BEAM EPITAXY

A.N.Alexeev, A.E.Byrnaz, D.M.Krasovitsky, M.V.Pavlenko, S.I.Petrov, Yu.V.Pogorelsky, I.A.Sokolov, M.A.Sokolov, M.V.Stepanov, A.P.Shkurko, V.P.Chaly

 

16.00 - 16.15 InGaN QW WITH HIGH PHOTOLUMINESCENCE EFFICIENCY IN THE 490-630 nm RANGE, GROWN BY MBE PA ON с-Al2O3

S.V. Ivanov, V.N. Jmerik, T.V. Shubina, S.B. Listoshin, A.M. Mizerov, А.А. Sitnikova, P.S. Kop'ev

 

16.15 - 16.30 PLASMA-ASSISTED MBE OF AlGaN-BASED HETEROSTRUCTURES FOR LEDs OF UV SPECTRAL RANGE

Jmerik V.N., Semenov A.V., Mizerov A.M., Shubina T.V., Toropov A.A., Listoshin S.B., Sakharov A.V., Zamoryanskaya M.V., Kop'ev P.S., and Ivanov S.V.

 

16.30 - 16.45 BREAK

 

16.30 - 19.00 POSTER SESSION AND EXHIBITION

 

16.45 - 19.00 SPESIAL SESSION:

EXPIRIENCE OF MANUFACTURING, START-UP AND UTILIZATION OF EPITAXIAL EQUIPMENT FOR III-N SEMICONDUCTORS IN RUSSIA

Chairman - O.P. Pchelyakov

 

From Nitride Technology vision to Equipment powers

A. Alexeev, L. Velikovsky, Y. Pogorelsky, A. Filaretov, V. Chaly

 

UPGRAITING OF СВЕ MACHINE`S FOR GaN STRUCTURES GROWTH BY AMMONIA-MBE

V.V. Preobrazhenskii, M.A. Putyato, B.R. Semyagin, A.V. Vasev, V.G. Mansurov, K.S. Zhuravlev, A.I. Toropov, O.P. Pchelyakov

 

DEPOSITION OF GaN LAYERS BY UHF PLASMA

S. Shapoval, A. Kovalchuk, V. Borodin, V. Gorbunov, Zh. Savina

 

Expirience of utilization D-180 (VEECO) setup for growth InGaN/GaN LED structures

Yu.N. Sweshnikov, R.B. Harlamov, I.N. Tsyplenkov

 

CREATION of III-N MOVPE SYSTEM

E.E.Zavarin, W.V.Lundin, M.A.Sinitsyn, and A.F Tsatsulnikov

 

STARTUP AND EXPLOITATION of AIX2000HT MOCVD SYSTEM IN IOFFE INSTITUTE: EXPERIENCE AND ANALYSIS

W.V.Lundin, E.E.Zavarin, M.A.Sinitsyn, A.E.Nikolaev, and A.F Tsatsulnikov

 

Discussion, short presentations from users of up to date growth equipment

 

19.00 - 20.50 - PARTY


Thursday, 01 February

Morning Session, 10.00 - 14.00

Department of Physics, Hohlov's Room

 

10.00 - 11.30 UNCOMMON III-N STRUCTURES AND RELATED MATERIALS

Chairman - V.G. Sidorov

 

10.00 - 10.10 Slideshow 'NITRIDE NANOART' / Information

 

10.10 - 10.30 HYBRID II-O/III-N LIGHT-EMITTING DIODES: STATE OF THE ART AND ANALYSIS OF OPERATION

K. A. Bulashevich, I. Yu. Evstratov, S. Yu. Karpov

 

10.30 - 10.45 THE SUBLIMATION STUDY OF THE GROWTH PROCESS OF MONOCRYSTALS OF SILICON CARBID AND ALUMINIUM NITRID SOLID SOLUTIONS

B.A.Bilalov, G.D.Kardashova, M.A.Gitikchiev, Ya.A.Alimagomedov

 

10.45 - 11.00 THE EFFECT OF TRANSFORMATION OF POLYTYPE (β-SiC)-(α-SiC ) DURING CARBONIZATION OF Si(111) SUBSTRATE

M.E.Kompan, S. A. Kukushkin, A. V. Osipov, I.G.Aksyanov, V.N.Bessolov, E.V.Konenkova, S. K. Gordeev, S. B. Korchagina

 

11.00 - 11.15 METHODS OF THE PREPARATION AND THE PROPERTIES ZnO FILMS

M.M. Mezdrogina, V.V. Krivolapchuk, E.Yu. Danilovsky, R.V. Kuzmin

 

11.15 - 11.30 VISIBLE AND INFRARED LUMINESCENCE IN WURTZITE CRYSTALS GaN WITH ADDITIONALLY INTRODUCED Zn AND Eu DOPANTS

M.M. Mezdrogina, V.V. Krivolapchuk, V.N. Petrov, Ju.V. Kozhanova , S.N. Rodin, E.Ju. Danilovsky,
R.V. Kuzmin

 

11.30 -11.45 BREAK

 

11.45 - 14.00 PROPERTIES OF III-N HETEROSTRUCTURES

Chairman - A.V. Saharov

 

11.45 - 12.05 OPTICALLY PUMPED LASERS BASED ON NITRIDES GROWN SILICON SUBSTRATES

E. V. Lutsenko

 

12.05 - 12.20 CHARACTERIZATION OF LIGHT EMITTING STRUCTURES WITH InGaN/GaN QUANTUM WELLS IN THE EBIC MODE OF SCANNING ELECTRON MICROSCOPE

E.B. Yakimov1, N.M. Shmidt

 

12.20 -12.35 INVESTIGATION OF DEFECTS WITH BRIGHT EBIC CONTRAST IN LIGHT EMITTING STRUCTURES InGaN/GaN.

N.M. Shmidt, P.S. Vergeles,, E.B. Yakimov

 

12.35-12.50 OPTICAL AND ELECTRICAL PROPERTIES OF AlGaN/GaN HETEROSTRUCTURES GROWN ON SILICON AND SAPPHIRE SUBSTRATES BY MOVPE

N. V. Rzheutski, A. L. Gurskii, E. V. Lutsenko, V. N. Pavlovskii, G. P. Yablonskii, A. S. Shulenkov, A. I. Stognii, M. Heuken, B. Schineller, H. Kalisch, R. H. Jansen

 

12.50 - 13.05 LIGHT-INDUCED DIFFRACTION KINETICS AND PHOTOLUMINESCENCE IN EPITAXIAL GaN GROWN ON SAPPHIRE SUBSTRATES

V. N. Pavlovskii, E. V. Lutsenko, A. V. Danilchyk, G. P. Yablonskii, T. Malinauskas,
R. Aleksiejūnas, K. Jarašiūnas, H. Kalisch, R. H. Jansen, B. Schineller, M. Heuken

 

13.05 - 13.20 BREAK

 

13.20 - 14.00 Late news, short presentations


14.00 - 15.00 Lunch

 

16.00-17.30    III-N BASED DEVICES

Chairman - V.G. Mokerov

 

16.00 - 16.15 III-N BASED TRANSISTORS / introduction

V.G. Mokerov

 

16.15 - 16.30 LOW NOISE AlGaN/GaN НЕМТs

I.M. Abolduyev, N.B. Gladysheva, A.A. Dorofeev, V.M. Minnebaev, Tchernyavsky A.A.

 

16.30 - 16.45 POWER MICROWAVE FIELD EFFECT TRANSISTOR BASED ON MULTILAYER HETEROSTRUCTURE AlN/AlGaN/GaN/AlGaN

A.N.Alexeev, S.B. Aleksandrov, D.E.Belyavsky, L.E. Velikovsky, V.E.Zemlyakov, D.M.Krasovitsky, V.A.Krasnik, S.I.Petrov, M.Yu.Pogorelsky, V.A.Razumnaya, А.М.Теmnov, A.G. Tkachenko, V.P.Chaly

 

16.45 - 17.00 MULTILAYER AlN/AlGaN/GaN/AlGaN HETEROSTRUCTURES WITH QUANTUM WELL CHANNEL FOR HIGH POWER MICROWAVE FIELD EFFECT TRANSISTORS

A.N.Alexeev, S.B. Aleksandrov, A.E.Byrnaz, L.E. Velikovsky, I.E. Velikovsky, D.M.Krasovitsky, M.V.Pavlenko, S.I.Petrov, M.Yu. Pogorelsky, Yu.V.Pogorelsky, I.A.Sokolov, M.A.Sokolov, M.V.Stepanov, A.G. Tkachenko, A.P.Shkurko, V.P.Chaly

 

17.00 - 17.15 InGaAlN HETEROSTRUCTURES FOR HEMTs

A.V.Sakharov, W.V.lundin, E.E.Zaverin, M.A.Sinitsin, A.F.Tsatsulnikov

 

17.15 - 17.30 THE NFW GENERATION OF SEMICONDUCTOR MATERIALS WITH UTILIZATION OF MICRO- AND NANOCRYSTALLINE DIAMOND FILMS AND PLATES

A.A. Arendarenko, A.G. Vasiliev, V.N. Danilin, T.A. Zhukova, V.I. Konov, V.G.Ralchenko, A.V. Petrov, Yu.V.Kolkovsky, A.L. Filatov

 

17.30-17.45 BREAK

 

17.45 - 18.30 III-N BASED DEVICES

Chairman - A.N. Kovalev

 

17.45 - 18.00 UV DETECTORS BASED ON AlN/AlGaN HETEROSTRUCTURES

S.V. Averin, N.V. Alkeev

 

18.00 - 18.15 DEEP LEVEL IMPURITIES AND DEFECTS IN GROUP III-NITRIDES AND IN NITRIDE-BASED DEVICES

A.Y. Polyakov, N.B. Smirnov, A.V. Govorkov, M.G. Milvidskii

 

18.15 - 18.30 RADIATION DEFECTS FORMATION IN GALLIUM NITRIDE: EFFECTS OF CRYSTALLINE PERFECTION

A.Y. Polyakov, N.B. Smirnov, A.V. Govorkov, A.V. Markov, T.G. Yugova, N.G. Kolin, D.I. Merkurisov, V.M. Boiko, I-H. Lee, S.J. Pearton, V.T. Bublik, K.D. Sherbatchev, M.I. Voronova

 

 

18.45 - 20.50 - PARTY


Friday, 02 February

Morning Session, 10.00 - 13.40

Department of Physics, Hohlov's Room

 

10.00 - 11.15 III-N LEDs

Chairman - G.V. Itkinson

 

10.00 - 10.15 GaN-BASED STRUCTURES FOR OPTOELECTONICS AND ELECTRONICS

A.F.Tsatsulnikov, W.V.Lundin, E.E.Zavarin, A.V.Sakharov, D.S.Sizov, M.A.Sinitsyn

 

10.15 - 10.30 STUDY OF HIGH-INDIUM-CONTENT InGaN NANOINSERTIONS IN AlGaN MATRIX

V.S.Sizov, A.F.Tsatsulnikov, W.V.Lundin

 

10.30 - 10.45 ELECTROREFLECTANCE FROM InGaN/GaN/AlGaN p-n HETEROSTRUCTURES WITH QUANTUM WELLS

L.P.Avakiants, M.L.Badgutdinov, P.Yu.Bokov, A.V.Cherviakov, S.S.Shirokov, A.E.Yunovich

 

10.45 - 11.00 SPECTRA ANALYSIS AND EFFICIENCY OF BLUE LIGHT-EMITTING DIODES BASED ON p-n InGaN/AlGaN/GaN HETEROSTRUCTURES

M.L.Badgutdinov, S.S.Shirokov, A.E.Yunovich, M.G.Agapov, D.V.Davydov, D.A.Lavrinovich, F.M.Snegov

 

11.00 - 11.15 OPTIMIZATION OF GaAlN-p/GaInN/n-GaN HETEROSTRUCTURES ELECTROLUMINESCENCE PROPERTIES BY I-V CHARACTERISTICS

E.N.Vigdorovich and Yu.N.Sveshnikov

 

11.15 - 11.30 BREAK

 

11.30 - 13.40 III-N LEDs

Chairman - A.N. Turkin

 

11.30 - 11.50 LIGHTING WITH LEDS: ILLUMINATING INSIGHTS INTO THE SOLID-STATE LIGHTING MARKET

Tim Whitaker

 

11.50 - 12.10 LEDs OPTICAL CHARACTERISTICS MEASUREMENTS

R. Stolyarevskaya

 

12.10 - 12.25 PROBLEMS OF METROLOGICAL ASSURANCE OF LIGHT-EMITTING DIODES OPTICAL MEASUREMENTS

L. S. Lovinsky

 

12.25 - 12.40 POWERFUL LIGHT-EMITTING DIODES OF THE WHITE LUMINESCENCE WITH THE LIGHT STREAM UP TO 300 lm AND LIGHT FEEDBACK UP TO 70 lm/W

Kogan L.M., Galchina N.A., Rassohin I.T., Soschin N.P.

 

12.40 - 12.55 THE COMPARISON CHARACTERISTICS OF DIFFERENT PHOSPHOR CLASSES FOR WHITE LED.

N.P. Soschin

 

12.55 - 13.10 HIGH EFFICIENCY TERNARY PHOSPHORS FOR WHITE LIGHT EMITTING DIODES

R.B. Jabbarov, A.E. Yunovich, N.N. Musayeva, B.G. Tagiev, O.B. Tagiev

 

13.10 - 13.25 EFFICIENCY OF WHITE LIGHT-EMITTING DIODES

A. Feopentov, A. Bogdanov

 

13.25 - 13.40 OPTIMIZATION OF FABRICATION TECHNIQUE FOR REFLECTIVE CONTACTS IN HIGH-POWER FLIP-CHIP AlGaInN-BASED LEDs

I.P.Smirnova, D.A.Zakheim, M.M.Kulagina, E.M.Arakcheeva


13.40 - 15.00 LUNCH

 

Evening Session 15.30 - 19.00

Department of Physics, Hohlov's Room

 

 

15.00 - 16.45 LEDs and Lighting Systems

Chairman - W.V. Lundin

 

15.00 - 15.15 SOME APPROPRIATENESS OF BLUE InGaN/GaN LED DEGRADATION

S.A. Belnik, E.D. Vasilieva, D.V. Davydov, A.E. Chernyakov, P.S. Kop'ev, D.A. Lavrinovich, A.L. Zakgeim, F.M. Snegov, N.M. Shmidt, V.V.Uelin

 

15.15 - 15.30 RADIATIVE AND NONRADIATIVE RECOMBINATION DYNAMIC IN BLUE LED

A.A.Greshnov, A.E.Chernyakov, D.V.Davydov, A.P.Kartashova, D.A.Lavrinovich, F.M.Snegov, A.L.Zakgeim, V.V.Ratnikov, O.A.Soltanovic, N.M.Shmidt, E.B.Yakimov

 

15.30 - 15.45 COMPUTER SIMULATION of InGaN LEDs

O.I. Rabinovich, V.P.Sushkov, A.V. Shishov

 

15.45 - 16.00 Active region temperature measurements for the powerful InGaN/GaN based light emitting diodes by luminescence methods

A. V. Danilchyk, E. V. Lutsenko, V. N. Pavlovskii,N. V. Rzheutski , K. A. Osipau, G. P. Yablonskii

 

16.00 - 16.15 THERMAL PARAMETERS OF BLUE InGaN/GaN LIGHT-EMITTING DIODES

Y.A. Bumai, O.S. Vaskov, D.S. Domanevskii

 

16.15 - 16.30 THERMAL PROCESS ANALYSIS IN LED DEVICES

Yu.V. Trofimov, S.Yu. Nikitin, V.I. Tsvirko, V.K. Sivenkov, S.I. Lishik, O.Ya.Tichonenko

 

16.30 - 16.45 LED LIGHTING AND SIGNALING DEVICES FOR TRANSPORTATION AND TRAFFIC SAFETY SYSTEMS

Trofimov Yu. V., Posedko V.S., Lishik S.I., Tsvirko V.I., Pautino A.A.

 

 

CLOSING 16.50 - 17.10

 

 

Chairman - A.E. Yunovich

Secretary Information - A.N.Turkin, V.V. Lundin 16.50 - 17.00

 

Closing remark - P.S. Kop'ev 17.00 - 17.10


POSTER SESSION

 

31 JANUARY 16.30 - 19.00

1 FEBRUARY 13.05 - 14.00

 

 

HOHLOV's ROOM HALL

 

P 1 MODEL OF p-TYPE DOPING IN GaN MOVPE

E.V. Yakovlev, S.Yu. Karpov, R.A. Talalaev

 

P 2 PECULIARITIES OF PLASMA-ASSISTED MOLECULAR BEAM EPITAXY GROWTH OF AlGaN ALLOYS

A.N. Semenov, V.N. Jmerik, A.M. Mizerov, S.V. Ivanov

 

P 3 FEATURES OF BULK ALUMINIUM NITRIDE CRYSTALS GROWTH

O.V. Avdeev, I.S. Barash, T.Yu. Chemekova, E.N. Mokhov, A.D. Roenkov, A.S. Segal, Yu.A. Vodakov, and Yu. N. Makarov

 

P 4 THE METAL-CERAMIC PACKAGE FOR GaN TRANSISTOR

V.A. Sidorov

 

P 5 DEPENDANCE BETWEEN WAVE-LENGTH AND THIKNESS OF InGaN LAYERS IN MQWs

Ermoshin I. Sveshnokov Y. Kharlamov R.

 

P 6 WAYS OF INCREASING AlGaInN LED HETEROSTRUCTURE QUANTUM EFICIENCY AT HIGH PUMPING DENSITY

D.A.Zakheim, A.S.Pavljuchenko, W.V.Lundin

 

P 7 SUPPRESSION OF CARRIER LEAKAGE FROM THE ACTIVE REGION OF LIGHT-EMITTING HETEROSTRUCTURES BY GRADED-COMPOSITION BLOCKING LAYER

K. A. Bulashevich, S. Yu. Karpov, R. A. Suris

 

P 8 METHOD OF CONTROLLING POTENTIAL DEGRADATION OF AlGaInN LEDs CHARACTERISTICS

S.G.Nikiforov, V.P.Sushkov

 

P 9 EVOLUTION OF CARRIER DISTRIBUTION IN MQW InGaN/GaN DURING DEGRADATION OF BLUE LIGHT EMITTING DIODES

M.G.Agapov, E.V.Bogdanova, D.V.Davydov, A.L.Zakgeim, D.A.Lavrinovich, F.M.Snegov, A.E.Chernyakov, N.M.Shmidt

 

P 10 INVESTIGATION of InGaN and AlGaInP LEDs QUANTUM EFFICIENCY ON CURRENT DENSITY.

A.L.Archipov, V.S. Abramov,V.P.Sushkov, A.V. Shishov, A.N.Turkin

 

P 11 MEHANISM OF SERIES RESISTANCE FORMATION DURING CURRENT FLOW IN COMPENSATED LAYER OF WIDE-BANDGAP LEDs

F.I. Manyakhin

 

P 12 ANALYSIS OF LOW ENERGY SIDE OF ELECTROLUMINESCENCE (EL) SPECTRA OF LIGHT-EMITTING DIODES WITH SINGLE InGaN QUANTUM WELL

D.S. Domanevskii, V.A. Vilkotskii, U.V. Trophimov, B.G. Arnaudov, R.D. Kakanakov, S.A. Manego

 

P12 LED MODULS, LINEAR ARRAYS AND WHITE-LIGHT LAMPS

L.M.Kogan, G.V.Puzachev, I.T.Rassohin,S.D.Yakubovskii

 

P 13 ABOUT METHODS AND PROGRAMS OF ILLUMINATION'S CALCULATIONS OF WORK-PLACES FROM LIGHT-EMITTING DIODE MODULES

E.M. Gutzeit

 

P 14 'TWO-RESONANT' HYSTERESIS OF A TUNNEL CURRENT IN HETEROSTRUCTURE
w-GaN/AlGaN (0001)

A.N.Razhuvalov, S.N.Griniaev

 

P 15 STUDY OF HVPE GaN EPILAYERS STRUCTURE BY METALLOGRAPHIC AND X-RAY METHODS

L.I.Dyakonov, Yu.H.Kozlova, A.V.Markov, M.V.Mezhennyi, V,F.Pavlov, T.G.Yugova

 

P 16 ELECTRICAL PROPERTIES OF SEMI-INSULATING GaN (Fe) LAYERS GROWN BY MOLECULAR BEAM EPITAXY

A.Y. Polyakov, N.B. Smirnov, A.V. Govorkov, A.V. Markov, A.M. Dabiran, A.M. Wowchak, P.P. Chow

 

P 17 ELECTROPHYSICAL PROPERTIES OF SOLID SOLUTIONS InxGa1-xN

T.A. Komissarova, N.N. Matrosov, L.I. Ryabova, D.R. Khokhlov, V.N. Jmerik, S.V. Ivanov

 

P 18 LATTICE DYNAMICS AND RAMAN SPECTRA OF InGaN ALLOYS

A.N. Smirnov, V.Yu. Davydov, I.N. Goncharuk, M.A. Yagovkina, E.E. Zavarin, M.A. Sinitsyn, and M.B. Smirnov

 

P 19 ACCUMULATION OF STRUCTURAL DEFECTS IN MBE GaN LAYERS DURING ERBIUM ION IMPLANTATION

N.A. Sobolev, V.I. Sakharov, I.T. Serenkov

 

P 20 A SENSITIZATION OF EMISSION AND MIGRATIONS MECHANISM OF THE EXCITATIONS ELECTRONS IN THE QUANTUM WELLS InGaN/GaN DOPED WITH Eu

V.V. Krivolapchuk, M.M. Mezdrogina, W.V. Lundin

 

P 21 THE EFFECT THE MIGRATIONS EXCITATION AND THE CAPTURE OF THE CARRIERS ON THE PHOTOLUMINESCENCE SPECTRA IN WURTZITE CRYSTALS GaN DOPED WITH Eu, Er

M.M. Mezdrogina, V.V. Krivolapchuk, Ju.V. Kozhanova, V.N. Petrov, S.N.Rodin, A.E. Cherenkov

 

P 22 MODELS OF CONDUCTIVITY, EFFECT OF REINFORCEMENT THE DIELECTRIC PERME-ABILITY AND OPTICAL CHARACTERISTICS NITRID ALUMINUM IN CARBIDE OF SILI-CON (SIC)1-X(ALN)X

Altukhov V.I., Bilalov B.A., Kazarov B.A., Safaraliev G.K.

 

P 23 FORMATION OF NEW TYPE 'CHAIN-LIKE' REGULAR NANOSTRUCTURES ON n‑GaN(0001) SURFACE

G.V. Benemanskaya, V.S. Vikhnin, M.N. Lapushkin, N.M. Shmidt

 

P 24 ELECTRONIC PROPERTIES AND ENERGETIC PARAMETERS OF 2D ACCUMULATION LAYERS OF Cs, Ba/n-GaN (0001) INTERFACES

G.V. Benemanskaya, M.N. Lapushkin, S.N. Timoshnev

 

P 25 Investigations of the photoluminescence spectra temperature dependences from InGaN quantum dots

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