Lyudmila Ivanovna Ryabova

INORGANIC CHEMISTRY DIVISION
LABORATORY OF PHYSICS AND CHEMISTRY OF SEMICONDUCTORS

SPECIAL COURSE: BASIC SOLID STATE PHYSICS

Graduated from the Physics Department of Moscow State University (1974); Ph.D. (1979); Dr.Sci. (1994).

RESEARCH ACTIVITIES AND INTERESTS: physics of semiconductors and insulators. Physics of narrow gap semiconductors based on A4B6 compounds.

PHONE: (095) 939-1151

RECENT PUBLICATIONS:

B.A. Akimov, N.B. Brandt, D.R. Khokhlov and L.I. Ryabova.

Local Metastable State in A4B6. Int.Conf. on Narrow Gap Semicond. (Maryland, USA, 1989). Abstracts, p. E6.

B.A. Akimov, S.O. Klimonskiy and L.I. Ryabova.

Long term relaxation processes, induced by electric field in dielectric phase of Pb1-xSnxTe(In) alloys. In: The structure and properties of A4B6 compounds. (Metallurgy, Moscow, 1990), p. 106-113.

B.A. Akimov, V.P. Zlomanov, L.I. Ryabova and D.R. Khokhlov.

Perspective materials for IR-optoelectronics on base of the A4B6 compounds. Vysokochistye Veschestva N 6, 22 (1991).