Оптоэлектроника на основе широкозонных полупроводниковых гетероструктур А3N и А2В6 Иванов Сергей Викторович Физико-технический институт им. А.Ф. Иоффе, Санкт-Петербург Среди бинарных полупроводников А3В5 за последние 20 лет наиболее активно и плодотворно развивались технологии, физика и приборные применения гетероструктур А3-нитридов (AlGaIn)N. Это привело 7 октября ... Phys. Status Solidi A 210, 439 (2013), feature paper. ... Phys. 114 , 124306 (2013). ... 7] S.V. Ivanov et al., ...
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