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221. Unusual phase transitions in PbSnTeSe and PbSnTeS crystals induced by Sn
... Electrical studies of quaternary solid solutions Pb 1-x Sn x Te 1-y Se y in a wide composition range revealed the phase transition, occurred at unexpectedly low x (x>0.08). It is shown that this phase transition may be associated with Sn off-center ions. ... The simple crystal structure and unique electronic properties of IV-VI narrow-gap semiconductors make them ideal objects for studying of "impurity ferroelectricity", induced in crystals by off-center ions. ...
[ Сохраненная копия ]  Ссылки http://scon155.phys.msu.su/publ/ferr93.html -- 19.8 Кб -- 08.11.2002
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222. Low-temperature phase transitions in some quaternary solid solutions of IV-VI
... Moscow State University, 119899 Moscow, Russia Samples of PbS x Se y Te 1-x-y , Pb 1-x Sn x Te 1-y Se y and Pb 1-x Sn x Te 1-y S y quaternary solid solutions were investigated in the 4-200 K temperature range using electrical and X-ray methods. The regions where low-temperature phase transitions take place were established. It is shown that phase transitions in these solid solutions are associated with off-center S and Sn ions. ... Phys. Solid State, 1983, v. 25, p. 2055. ...
[ Сохраненная копия ]  Ссылки http://scon155.phys.msu.su/publ/jac94.html -- 14.7 Кб -- 08.11.2002
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223. New arguments in support of the off-center positions of the tin atoms in
... Investigations of the electrical properties of PbSnTeS, PbSnTeSe, and PbSnSeS solid solutions confirmed an earlier hypothesis that the positions of the tin atoms were off-center and that the tunnel motion of these atoms were suppressed in the anion sublattice. ... Other works on off-center impurities ...
[ Сохраненная копия ]  Ссылки http://scon155.phys.msu.su/publ/newargs_e.html -- 2.5 Кб -- 08.11.2002
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224. Ferroelectric phase transitions in IV-VI semiconductors associated with
... New ferroelectric phase transitions were found in ternary and quaternary solid solutions of IV-VI semiconductors. ... Two different approaches have been proposed to explain the appearance of ferroelectricity in IV-VI semiconductors: the ferroelectric phase transition in GeTe, SnTe and Pb 1-x Sn x Te was explained by the softening of TO-phonon mode at gamma-point of Brillouin zone /1/, while one in Pb 1-x Ge x Te was attributed to the ordering of dipoles of off-center ions /2-4/. ...
[ Сохраненная копия ]  Ссылки http://scon155.phys.msu.su/publ/ferr94.html -- 10.6 Кб -- 08.11.2002
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225. EXAFS studies of the local structure of In in PbTe, SnTe and GeTe
... PbTe, SnTe, GeTe and their solid solutions are narrow-gap semiconductors widely used in infrared optoelectronics and for thermoelectric energy conversion. ... The present work is a continuation of recent EXAFS studies performed at the NSLS on GeTe, SnTe and PbTe crystals doped with high concentration of indium (10-35 at.% ... The studied samples were PbTe, SnTe and GeTe doped with 1.5-2% of indium along two sections (InTe and In 2 Te 3 ) of the phase diagrams. ... Results of data analysis. ...
[ Сохраненная копия ]  Ссылки http://scon155.phys.msu.su/publ/SRSreport1.html -- 6.4 Кб -- 08.11.2002
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226. Определение зарядового состояния тулия в PbTe методом XANES
... Химический факультет МГУ, Москва . Физический факультет МГУ, Москва . ... Поэтому представляло интерес провести прямые измерения зарядового состояния атомов Tm в PbTe и сопоставить полученные результаты с физическими свойствами кристаллов. ... Сопоставление спектров, полученных на легированных кристаллах PbTe, со спектрами эталонных образцов показало, что независимо от разреза, по которому проводится легирование теллурида свинца, тулий находится в кристалле в зарядовом состоянии Tm +3 . ...
[ Сохраненная копия ]  Ссылки http://scon155.phys.msu.su/publ/pbtmte_r.html -- 3.6 Кб -- 08.11.2002
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227. http://scon155.phys.msu.su/publ/excitons.pdf
... S. DNEPRO V SKII The enhancement of both the binding energy and the oscillator strength of excitons in nanostructures and the possibility to increase the strength of Coulomb interaction, responsible for the binding of electronґhole pairs to excitons, by combining semiconductor and dielectric materials with different values of dielectric constants allow to create excitonic devices operating at room temperature. , , ґ , , . ... GaAs Eex 4,2 , aex 15 . ... d aex), E 2D n R p 1 GaAlAs n 2 h - + GaAs i ....
[ Текст ]  Ссылки http://scon155.phys.msu.su/publ/excitons.pdf -- 118.3 Кб -- 28.09.2002
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228. http://scon155.phys.msu.su/~swan/cyrtug2000.pdf
... TEX METAFONT , TEX - . ... TEX; Internet ftp://sunsite.unc.edu/pub/academic/russianstudies/Software/PSfonts/pscyr.tar.gz. ... AcademyPSCyr), Regular , Bold , Italic Ї (HandbookPSCyr), Regular , Bold , Italic Ї (CollegePSCyr), Regular , Bold , Italic Ї (AntiquaPSCyr), Regular , Bold , Italic Ї (Lazurski), Regular Ї (TimesNewRomanPSMT), Regular , Bold , Italic , Bold Italic : Ї (ArialMT), Regular , Bold , Italic , Bold Italic , Black Ї (TextbookPSCyr), Regular , Bold ,...
[ Текст ]  Ссылки http://scon155.phys.msu.su/~swan/cyrtug2000.pdf -- 242.0 Кб -- 03.09.2002
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229. http://scon155.phys.msu.su/publ/PhysSolidState_44_1643.pdf
... SEMICONDUCTORS AND DIELECTRICS An EXAFS Study of the Local Structure of the Pb1 ґ xSn1 ґ xS Solid Solution A. I. Lebedev*, I. A. Sluchinskaya*, and I. H. Munro** *Moscow State University, Vorob'evy gory, Moscow, 119899 Russia e-mail: swan@mch.chem.msu.ru **Daresbury Laboratory, Warrington, WA4 4AD U.K. Received November 20, 2001 Abstract--The local lead-atom environment in the PbxSnx ґ 1S solid solutions with cubic and orthorhombic structure was studied by EXAFS spectroscopy. ...
[ Текст ]  Ссылки http://scon155.phys.msu.su/publ/PhysSolidState_44_1643.pdf -- 123.5 Кб -- 28.07.2002
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230. Direct determination of the shape of potential well for off-center Ge atom in
... Some experimental data (like heat capacity measurements [1]) indicated the displacive type of the phase transition while the EXAFS data [2] showed that Ge atoms are off-center in both GeTe-PbTe and GeTe-SnTe solid solutions. In the present work we used the EXAFS technique to determine the shape of potential well for the Ge atom in a series of Sn 1-x Ge x Te solid solution (x=0.2--1). ... The potential wells are not very deep; their depth varies from W=10 meV for x=0.2 to 30 meV for x=1. ...
[ Сохраненная копия ]  Ссылки http://scon155.phys.msu.su/publ/s24.html -- 4.5 Кб -- 29.06.2002
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231. World Wide Web -- Всемирная Информационная Паутина в сети Internet
Второе издание . В марте 1997 года Ассоциация Relarn и Химический факультет МГУ выпустили второе издание книги Д. Рассохина и А. Лебедева World Wide Web -- Всемирная Информационная Паутина в сети Internet (практическое руководство) . ... В руководстве по HTML нашли отражение все синтаксические конструкции стандарта HTML версии 2, а также многие расширения, предложенные в проекте версии HTML 3.2 ("Wilbur"). Самораспаковывающийся архив второго издания книги (для Windows 95/NT) . ...
[ Сохраненная копия ]  Ссылки http://scon155.phys.msu.su/~swan/wwwbook.html -- 2.6 Кб -- 19.04.2002
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232. Anomalous relaxation of light-induced states of a-Si:H
... While the faster process has characteristics corresponding to the conventional metastable dangling bond creation, the characteristics of the slow process are shown to be anomalous (the activation energy for defect creation higher than that for the normal process and the parameter beta decreasing with temperature). ... The model accounts for the observed features of the anomalous process. A possible underlying microscopic mechanism of structural changes is discussed. ...
[ Сохраненная копия ]  Ссылки http://scon155.phys.msu.su/publ/kaz1998.html -- 2.5 Кб -- 11.04.2002
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233. Universal theoretical description of electronic transport in disordered organic
... It is shown that theoretical methods developed for description of hopping transport in disordered inorganic solids, such as amorphous semiconductors, can also be successfully applied to description of hopping transport in organic disordered systems, such as conjugated or molecularly doped polymers. We concentrate our discussion on percolation approach and show its universal applicability to systems with different distributions of localized state energies. ...
[ Сохраненная копия ]  Ссылки http://scon155.phys.msu.su/publ/zv2002-5.html -- 2.1 Кб -- 11.04.2002
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234. Percolation Approach to Hopping Transport in Organic Disordered Solids
... Percolation approach is used to study the d.c. hopping conductivity and thermopower in systems with a Gaussian density of localized states typical for disordered organic materials. It is shown that the theoretical methods developed earlier for the description of hopping transport in disordered inorganic solids, such as amorphous semiconductors, can also be successfully applied to description of hopping transport in organic disordered solids, such as conjugated or molecularly doped polymers. ...
[ Сохраненная копия ]  Ссылки http://scon155.phys.msu.su/publ/zv2002-4.html -- 2.3 Кб -- 11.04.2002
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235. Conduction in Granular Metals: Virtual State-Assisted Hopping
... We discuss the calculation of the d.c. conductivity of granular metals on the insulating side of the metal--insulator transition. The granular structure is represented by a fractal percolation cluster and the problem of virtual tunneling-assisted conductivity is shown to be related to estimating the number of minimal paths for the problem of chemical distance metric on the fractal. ...
[ Сохраненная копия ]  Ссылки http://scon155.phys.msu.su/publ/zv2002-3.html -- 2.3 Кб -- 11.04.2002
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236. Hopping in Quasi-One-Dimensional Disordered Solids: Beyond the Nearest-Neighbor
... The theories of hopping transport in quasi-one-dimensional disordered organic solids with Gaussian distribution of localized state energies are generalized to account for distant-neighbor transitions. ... At lower temperatures, where the hopping range extends beyond second-nearest neighbors, C(T) is further decreased. The analytical results are in fair agreement with the results of Monte-Carlo simulation of one-dimensional variable-range hopping. ...
[ Сохраненная копия ]  Ссылки http://scon155.phys.msu.su/publ/zv2002-1.html -- 2.8 Кб -- 11.04.2002
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237. Conduction in Granular Metals by Hopping via Virtual States Igor P. Zvyagin
... I.P. Zvyagin , R. Keiper . It is shown that the conductivity of granular metals on the insulating side of the metal--insulator transition can be essentially determined by inter-grain tunneling via virtual localized states of intermediate grains. This mechanism gives rise to conductivity temperature dependence of the form ln(sigma)=const-(T0/T) x , where x is about 0.4, and to a large enhancement of the conductivity. ...
[ Сохраненная копия ]  Ссылки http://scon155.phys.msu.su/publ/zv2001-1.html -- 1.9 Кб -- 11.04.2002
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238. Hopping transport equation for electrons in superlattices with vertical...
... We develop a theory of vertical hopping transport in doped superlattices with intentional uncorrelated vertical disorder introduced by controlled random variations of well widths. ... It is shown that due to quasi-equilibrium situation within the wells, the master rate equation for transitions between the electronic states of the structure can be reduced to a truncated rate equation for inter-well transitions only. ...
[ Сохраненная копия ]  Ссылки http://scon155.phys.msu.su/publ/zv2000-1.html -- 2.6 Кб -- 11.04.2002
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239. Effect of Coulomb Interactions on the Density of States in Intentionally
... We study the effect of doping on the energy spectrum of a superlattice with intentional disorder related to fluctuations of the layer widths. Disorder-induced redistribution of carriers between the layers gives rise to Coulomb fields that shift the energy levels and produce a decrease in the width of the energy level distribution (vertical screening). ... This affects vertical hopping conduction, since these levels correspond to the "bottlenecks" of the effective resistance network. ...
[ Сохраненная копия ]  Ссылки http://scon155.phys.msu.su/publ/zv2002-2.html -- 2.3 Кб -- 11.04.2002
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240. Обменные эффекты в двумерном электронном газе полупроводника при конечных
... Кафедра физики полупроводников . Рассчитана обменная энергия электронов основной подзоны размерного квантования в узкой квантовой яме при произвольных концентрациях и температурах. Определены условия перехода двумерной электронной системы в спиново-поляризованное состояние за счет выигрыша в обменном вкладе в свободную энергию. ... Другие исследования по теории полупроводников ...
[ Сохраненная копия ]  Ссылки http://scon155.phys.msu.su/publ/vmu011_r.html -- 2.1 Кб -- 03.04.2002
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